Overview
The NVMFD5877NLWFT1G is a dual N-channel, logic-level MOSFET produced by onsemi. This device is designed for high-performance applications requiring low conduction losses and minimal driver losses. It features a compact DFN8 5x6 package, making it suitable for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Tmb = 25°C) | ID | 17 | A |
| Power Dissipation (Tmb = 25°C) | PD | 23 | W |
| Continuous Drain Current (TA = 25°C) | ID | 6 | A |
| Power Dissipation (TA = 25°C) | PD | 3.2 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 74 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 7.5 A) | RDS(on) | 31-39 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.0-3.0 | V |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Wettable flanks option for enhanced optical inspection (NVMFD5877NLWF)
- AEC-Q101 qualified and PPAP capable for automotive reliability
- Pb-free, halogen-free, and RoHS compliant
- Compact DFN8 5x6 package for space-constrained designs
Applications
The NVMFD5877NLWFT1G is suitable for a variety of high-performance applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Industrial power supplies: Its low RDS(on) and high current handling make it suitable for industrial power supply applications.
- Motor control: It can be used in motor control circuits where high efficiency and reliability are required.
- Power management: It is applicable in various power management circuits requiring low conduction losses.
Q & A
- What is the maximum drain-to-source voltage of the NVMFD5877NLWFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at Tmb = 25°C?
The continuous drain current at Tmb = 25°C is 17 A.
- Is the NVMFD5877NLWFT1G RoHS compliant?
- What is the typical on-resistance at VGS = 10 V and ID = 7.5 A?
The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 7.5 A is between 31-39 mΩ.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from −55°C to +175°C.
- Is the device AEC-Q101 qualified?
- What is the package type of the NVMFD5877NLWFT1G?
The device is packaged in a DFN8 5x6 (SO8FL-Dual) package.
- What is the maximum power dissipation at TA = 25°C?
The maximum power dissipation at TA = 25°C is 3.2 W.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current (IDM) for a pulse width of 10 μs is 74 A.
- What are the typical switching times for this MOSFET?
The typical turn-on delay time (td(on)) is around 4.9 ns, rise time (tr) is around 6.4 ns, turn-off delay time (td(off)) is around 14.5 ns, and fall time (tf) is around 2.4 ns at VGS = 10 V and VDS = 48 V.
