Overview
The NX3008NBKS,115 is a 30 V, 350 mA dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching, low threshold voltage, and robust ESD protection. The NX3008NBKS is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (drain-source voltage) | Tj = 25 °C | - | - | 30 | V |
| VGS (gate-source voltage) | - | -8 | 8 | V | |
| ID (drain current) | VGS = 4.5 V; Tamb = 25 °C | - | - | 350 mA | |
| IDM (peak drain current) | Tamb = 25 °C; single pulse; tp ≤10 µs | - | - | 1.4 A | |
| Ptot (total power dissipation) | Tamb = 25 °C | - | - | 280 mW | |
| Tj (junction temperature) | - | -55 | - | 150 °C | |
| Tamb (ambient temperature) | - | -55 | - | 150 °C | |
| Tstg (storage temperature) | - | -65 | - | 150 °C | |
| VESD (electrostatic discharge voltage) | HBM | - | - | 2000 V | |
| VGSth (gate-source threshold voltage) | ID = 250 µA; VDS = VGS; Tj = 25 °C | 0.6 | 0.9 | 1.1 V | |
| RDSon (on-state resistance) | VGS = 4.5 V | - | - | 1400 mΩ | |
| Ciss (input capacitance) | VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | - | - | 34 pF | |
| Coss (output capacitance) | - | - | - | 6.5 pF |
Key Features
- Very fast switching: Optimized for high-speed applications.
- Low threshold voltage: Ensures efficient operation with low gate drive requirements.
- Trench MOSFET technology: Provides high performance and reliability.
- ESD protection up to 2 kV: Enhances robustness against electrostatic discharge.
- AEC-Q101 qualified: Suitable for automotive and other demanding environments.
Applications
- Relay driver: Ideal for driving relays in various systems.
- High-speed line driver: Suitable for high-speed signal transmission.
- Low-side load switch: Used in load switching applications requiring low on-state resistance.
- Switching circuits: Applicable in various switching circuits due to its fast switching capabilities.
Q & A
- What is the maximum drain-source voltage of the NX3008NBKS?
The maximum drain-source voltage (VDS) is 30 V. - What is the maximum drain current of the NX3008NBKS at 25°C?
The maximum drain current (ID) is 350 mA at VGS = 4.5 V and Tamb = 25°C. - What is the peak drain current of the NX3008NBKS?
The peak drain current (IDM) is 1.4 A for a single pulse with tp ≤10 µs. - What is the total power dissipation of the NX3008NBKS at 25°C?
The total power dissipation (Ptot) is 280 mW at Tamb = 25°C. - What is the junction temperature range of the NX3008NBKS?
The junction temperature (Tj) range is -55°C to 150°C. - Is the NX3008NBKS AEC-Q101 qualified?
Yes, the NX3008NBKS is AEC-Q101 qualified, making it suitable for automotive applications. - What is the ESD protection rating of the NX3008NBKS?
The ESD protection rating is up to 2000 V (HBM). - What are the typical applications of the NX3008NBKS?
Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits. - What is the package type of the NX3008NBKS?
The package type is SOT363 (SC-88) Surface-Mounted Device (SMD). - What is the gate-source threshold voltage of the NX3008NBKS?
The gate-source threshold voltage (VGSth) is typically 0.9 V.
