NTMFD4901NFT1G
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onsemi NTMFD4901NFT1G

Manufacturer No:
NTMFD4901NFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFD4901NFT1G is a dual N-Channel MOSFET with an integrated Schottky diode, manufactured by onsemi. This device is designed to provide a co-packaged power stage solution, minimizing board space and optimizing performance for various power management applications. The MOSFET features low on-resistance, minimized parasitic inductances, and is optimized to reduce power losses. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValue (Q1)Value (Q2)Unit
Drain-to-Source VoltageVDSS3030V
Gate-to-Source VoltageVGS±20±20V
Continuous Drain Current (TA = 25°C)ID13.523.4A
Continuous Drain Current (TA = 85°C)ID9.716.9A
Power Dissipation (TA = 25°C)PD1.902.07W
On-Resistance (VGS = 10 V, ID = 10 A)RDS(on)6.5 mΩ2.35 mΩ
On-Resistance (VGS = 4.5 V, ID = 10 A)RDS(on)10 mΩ3.5 mΩ
Operating Junction TemperatureTJ-55 to +150-55 to +150°C
Lead Temperature for SolderingTL260260°C

Key Features

  • Co-packaged power stage solution to minimize board space
  • Low side MOSFET with integrated Schottky diode
  • Minimized parasitic inductances
  • Optimized devices to reduce power losses
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • DC-DC converters
  • System voltage rails
  • Point of load (POL) applications

Q & A

  1. What is the NTMFD4901NFT1G? The NTMFD4901NFT1G is a dual N-Channel MOSFET with an integrated Schottky diode, designed for power management applications.
  2. What are the key features of the NTMFD4901NFT1G? It features a co-packaged power stage, low side MOSFET with integrated Schottky, minimized parasitic inductances, and is optimized to reduce power losses.
  3. What are the maximum drain-to-source voltages for Q1 and Q2? Both Q1 and Q2 have a maximum drain-to-source voltage of 30 V.
  4. What are the continuous drain currents for Q1 and Q2 at 25°C? Q1 has a continuous drain current of 13.5 A, and Q2 has a continuous drain current of 23.4 A at 25°C.
  5. What is the on-resistance of Q1 and Q2 at VGS = 10 V? Q1 has an on-resistance of 6.5 mΩ, and Q2 has an on-resistance of 2.35 mΩ at VGS = 10 V.
  6. What are the typical applications of the NTMFD4901NFT1G? Typical applications include DC-DC converters, system voltage rails, and point of load (POL) applications.
  7. Is the NTMFD4901NFT1G environmentally friendly? Yes, it is Pb-free, halogen-free, and RoHS compliant.
  8. What is the operating junction temperature range for the NTMFD4901NFT1G? The operating junction temperature range is -55 to +150°C.
  9. What is the lead temperature for soldering? The lead temperature for soldering is 260°C.
  10. What package type is the NTMFD4901NFT1G available in? It is available in a DFN8 package.

Product Attributes

FET Type:2 N-Channel (Dual), Schottky
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10.3A, 17.9A
Rds On (Max) @ Id, Vgs:6.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1150pF @ 15V
Power - Max:1.1W, 1.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Same Series
NTMFD4901NFT3G
NTMFD4901NFT3G
MOSFET 2N-CH 30V 8DFN

Similar Products

Part Number NTMFD4901NFT1G NTMFD4902NFT1G NTMFD4901NFT3G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual), Schottky 2 N-Channel (Dual), Schottky 2 N-Channel (Dual), Schottky
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 10.3A, 17.9A 10.3A, 13.3A 10.3A, 17.9A
Rds On (Max) @ Id, Vgs 6.5mOhm @ 10A, 10V 6.5mOhm @ 10A, 10V 6.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V 9.7nC @ 4.5V 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V 1150pF @ 15V 1150pF @ 15V
Power - Max 1.1W, 1.2W 1.1W, 1.16W 1.1W, 1.2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

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