NDC7002N_SB9G007
  • Share:

onsemi NDC7002N_SB9G007

Manufacturer No:
NDC7002N_SB9G007
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 50V 0.51A 6-SSOT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDC7002N is a dual N-Channel enhancement mode power field effect transistor produced by onsemi. It utilizes onsemi’s proprietary high cell density DMOS technology, designed to minimize on-state resistance and provide rugged and reliable performance with fast switching capabilities. This device is particularly suited for low voltage applications requiring a low current high side switch.

Key Specifications

Parameter Symbol Min Max Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 0.51 A
Pulsed Drain Current ID 1.5 A
Power Dissipation PD 0.96 W
Operating and Storage Temperature Range TJ, TSTG -55 150 °C
Thermal Resistance, Junction to Case RθJC 60 °C/W
Thermal Resistance, Junction to Ambient RθJA 130 °C/W
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) 1.7 2 3.5 Ω

Key Features

  • High Density Cell Design for Low RDS(ON)
  • Proprietary SUPERSOT-6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities
  • High Saturation Current
  • Pb-Free Device
  • Fast Switching Capabilities
  • Rugged and Reliable Performance

Applications

The NDC7002N is suitable for various low voltage applications, including but not limited to:

  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Audio Amplifiers
  • General Purpose Switching Applications

Q & A

  1. What is the maximum drain-source voltage of the NDC7002N?

    The maximum drain-source voltage (VDS) is 50 V.

  2. What is the continuous drain current rating of the NDC7002N?

    The continuous drain current (ID) is 0.51 A.

  3. What is the thermal resistance from junction to ambient for the NDC7002N?

    The thermal resistance from junction to ambient (RθJA) is 130 °C/W.

  4. Is the NDC7002N a Pb-Free device?
  5. What is the gate threshold voltage range of the NDC7002N?

    The gate threshold voltage (VGS(th)) range is from 1 V to 2.5 V.

  6. What is the typical on-state resistance of the NDC7002N at VGS = 10 V and ID = 0.51 A?

    The typical on-state resistance (RDS(ON)) is 2 Ω.

  7. What package type is used for the NDC7002N?

    The NDC7002N uses the SUPERSOT-6 package.

  8. What are the operating and storage temperature ranges for the NDC7002N?

    The operating and storage temperature range is from -55°C to 150°C.

  9. Is the NDC7002N suitable for high current applications?

    No, the NDC7002N is more suited for low current high side switch applications.

  10. What is the maximum pulse source current rating of the NDC7002N?

    The maximum pulse source current (ISM) is 1.5 A.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:510mA
Rds On (Max) @ Id, Vgs:2Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
0 Remaining View Similar

In Stock

-
254

Please send RFQ , we will respond immediately.

Same Series
NDC7002N_SB9G007
NDC7002N_SB9G007
MOSFET 2N-CH 50V 0.51A 6-SSOT

Related Product By Categories

NTMD6P02R2G
NTMD6P02R2G
onsemi
MOSFET 2P-CH 20V 4.8A 8SOIC
2N7002BKS,115
2N7002BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.3A 6TSSOP
PMGD780SN,115
PMGD780SN,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.49A 6TSSOP
NTZD3155CT1G
NTZD3155CT1G
onsemi
MOSFET N/P-CH 20V SOT-563
2N7002VC-7
2N7002VC-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
BUK9K6R8-40EX
BUK9K6R8-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
PHKD13N03LT,518
PHKD13N03LT,518
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
MCH6664-TL-W
MCH6664-TL-W
onsemi
MOSFET 2P-CH 30V 1.5A SOT363
AO3415B
AO3415B
Alpha & Omega Semiconductor Inc.
MOSFET 2P-CH 30V 6A 8-SOIC
NTMFD4C86NT1G
NTMFD4C86NT1G
onsemi
MOSFET 2N-CH 30V 8DFN

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR