NDC7002N_SB9G007
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onsemi NDC7002N_SB9G007

Manufacturer No:
NDC7002N_SB9G007
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 50V 0.51A 6-SSOT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDC7002N is a dual N-Channel enhancement mode power field effect transistor produced by onsemi. It utilizes onsemi’s proprietary high cell density DMOS technology, designed to minimize on-state resistance and provide rugged and reliable performance with fast switching capabilities. This device is particularly suited for low voltage applications requiring a low current high side switch.

Key Specifications

Parameter Symbol Min Max Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 0.51 A
Pulsed Drain Current ID 1.5 A
Power Dissipation PD 0.96 W
Operating and Storage Temperature Range TJ, TSTG -55 150 °C
Thermal Resistance, Junction to Case RθJC 60 °C/W
Thermal Resistance, Junction to Ambient RθJA 130 °C/W
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) 1.7 2 3.5 Ω

Key Features

  • High Density Cell Design for Low RDS(ON)
  • Proprietary SUPERSOT-6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities
  • High Saturation Current
  • Pb-Free Device
  • Fast Switching Capabilities
  • Rugged and Reliable Performance

Applications

The NDC7002N is suitable for various low voltage applications, including but not limited to:

  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Audio Amplifiers
  • General Purpose Switching Applications

Q & A

  1. What is the maximum drain-source voltage of the NDC7002N?

    The maximum drain-source voltage (VDS) is 50 V.

  2. What is the continuous drain current rating of the NDC7002N?

    The continuous drain current (ID) is 0.51 A.

  3. What is the thermal resistance from junction to ambient for the NDC7002N?

    The thermal resistance from junction to ambient (RθJA) is 130 °C/W.

  4. Is the NDC7002N a Pb-Free device?
  5. What is the gate threshold voltage range of the NDC7002N?

    The gate threshold voltage (VGS(th)) range is from 1 V to 2.5 V.

  6. What is the typical on-state resistance of the NDC7002N at VGS = 10 V and ID = 0.51 A?

    The typical on-state resistance (RDS(ON)) is 2 Ω.

  7. What package type is used for the NDC7002N?

    The NDC7002N uses the SUPERSOT-6 package.

  8. What are the operating and storage temperature ranges for the NDC7002N?

    The operating and storage temperature range is from -55°C to 150°C.

  9. Is the NDC7002N suitable for high current applications?

    No, the NDC7002N is more suited for low current high side switch applications.

  10. What is the maximum pulse source current rating of the NDC7002N?

    The maximum pulse source current (ISM) is 1.5 A.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:510mA
Rds On (Max) @ Id, Vgs:2Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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Same Series
NDC7002N
NDC7002N
MOSFET 2N-CH 50V 0.51A SSOT6

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