PHKD13N03LT,518
  • Share:

NXP USA Inc. PHKD13N03LT,518

Manufacturer No:
PHKD13N03LT,518
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHKD13N03LT,518 is a N-channel trench MOSFET produced by Nexperia USA Inc., formerly part of NXP USA Inc. This component is designed for high-performance applications requiring low on-state resistance and high current handling. However, it is important to note that this part is currently obsolete and no longer manufactured.

Key Specifications

GS = 10 V
ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)10.4 A
RDS(on) (On-State Resistance)
Package8-SOIC
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance (RDS(on)) for efficient power handling.
  • High continuous drain current (ID) of 10.4 A.
  • Compact 8-SOIC package for space-saving designs.
  • Wide operating temperature range from -55°C to 150°C.
  • High gate-source voltage tolerance (±20 V) for robust operation.

Applications

The PHKD13N03LT,518 MOSFET is suitable for various high-power applications, including but not limited to:

  • Power switching and power management systems.
  • Motor control and drive systems.
  • DC-DC converters and power supplies.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PHKD13N03LT,518?
    The maximum drain-source voltage is 30 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 10.4 A.
  3. What is the typical on-state resistance (RDS(on)) of the PHKD13N03LT,518?
    The typical on-state resistance is 13 mΩ at VGS = 10 V.
  4. In what package is the PHKD13N03LT,518 available?
    The component is available in an 8-SOIC package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. Is the PHKD13N03LT,518 still in production?
    No, the PHKD13N03LT,518 is obsolete and no longer manufactured.
  7. What are some potential substitutes for the PHKD13N03LT,518?
    Available substitutes include the AO4818B from Alpha & Omega Semiconductor Inc..
  8. What are the key features of the PHKD13N03LT,518?
    The key features include low on-state resistance, high continuous drain current, compact packaging, and a wide operating temperature range.
  9. In which applications is the PHKD13N03LT,518 typically used?
    It is used in power switching, motor control, DC-DC converters, and automotive and industrial control systems.
  10. What is the gate-source voltage tolerance of the PHKD13N03LT,518?
    The gate-source voltage tolerance is ±20 V.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10.4A
Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:752pF @ 15V
Power - Max:3.57W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

$0.24
154

Please send RFQ , we will respond immediately.

Similar Products

Part Number PHKD13N03LT,518 PHKD13N03LT,118
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 10.4A 10.4A
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 5V 10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 752pF @ 15V 752pF @ 15V
Power - Max 3.57W 3.57W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
PMDXB600UNEZ
PMDXB600UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.6A 6DFN
NX3008NBKS,115
NX3008NBKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.35A 6TSSOP
CSD87588N
CSD87588N
Texas Instruments
MOSFET 2N-CH 30V 25A 5PTAB
2N7002PV,115
2N7002PV,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.35A SOT-666
FDC6333C
FDC6333C
onsemi
MOSFET N/P-CH 30V 2.5A/2A SSOT6
FDS4935BZ
FDS4935BZ
onsemi
MOSFET 2P-CH 30V 6.9A 8SOIC
2N7002VA-7-F
2N7002VA-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
PHKD13N03LT,118
PHKD13N03LT,118
Nexperia USA Inc.
MOSFET 2N-CH 30V 10.4A 8SOIC
STL13DP10F6
STL13DP10F6
STMicroelectronics
MOSFET 2P-CH 100V 13A PWRFLAT56
MCH6664-TL-W
MCH6664-TL-W
onsemi
MOSFET 2P-CH 30V 1.5A SOT363
FDG6332C-PG
FDG6332C-PG
onsemi
MOSFET N P-CH 20V SC70-6

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
74AHCT1G04GW-Q100125
74AHCT1G04GW-Q100125
NXP USA Inc.
INVERTER, AHCT/VHCT/VT SERIES
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
74LV165DB118
74LV165DB118
NXP USA Inc.
NOW NEXPERIA 74LV165DB - PARALLE
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN