PHKD13N03LT,518
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NXP USA Inc. PHKD13N03LT,518

Manufacturer No:
PHKD13N03LT,518
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PHKD13N03LT,518 is a N-channel trench MOSFET produced by Nexperia USA Inc., formerly part of NXP USA Inc. This component is designed for high-performance applications requiring low on-state resistance and high current handling. However, it is important to note that this part is currently obsolete and no longer manufactured.

Key Specifications

GS = 10 V
ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)10.4 A
RDS(on) (On-State Resistance)
Package8-SOIC
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance (RDS(on)) for efficient power handling.
  • High continuous drain current (ID) of 10.4 A.
  • Compact 8-SOIC package for space-saving designs.
  • Wide operating temperature range from -55°C to 150°C.
  • High gate-source voltage tolerance (±20 V) for robust operation.

Applications

The PHKD13N03LT,518 MOSFET is suitable for various high-power applications, including but not limited to:

  • Power switching and power management systems.
  • Motor control and drive systems.
  • DC-DC converters and power supplies.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PHKD13N03LT,518?
    The maximum drain-source voltage is 30 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 10.4 A.
  3. What is the typical on-state resistance (RDS(on)) of the PHKD13N03LT,518?
    The typical on-state resistance is 13 mΩ at VGS = 10 V.
  4. In what package is the PHKD13N03LT,518 available?
    The component is available in an 8-SOIC package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. Is the PHKD13N03LT,518 still in production?
    No, the PHKD13N03LT,518 is obsolete and no longer manufactured.
  7. What are some potential substitutes for the PHKD13N03LT,518?
    Available substitutes include the AO4818B from Alpha & Omega Semiconductor Inc..
  8. What are the key features of the PHKD13N03LT,518?
    The key features include low on-state resistance, high continuous drain current, compact packaging, and a wide operating temperature range.
  9. In which applications is the PHKD13N03LT,518 typically used?
    It is used in power switching, motor control, DC-DC converters, and automotive and industrial control systems.
  10. What is the gate-source voltage tolerance of the PHKD13N03LT,518?
    The gate-source voltage tolerance is ±20 V.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10.4A
Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:752pF @ 15V
Power - Max:3.57W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

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Similar Products

Part Number PHKD13N03LT,518 PHKD13N03LT,118
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 10.4A 10.4A
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 5V 10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 752pF @ 15V 752pF @ 15V
Power - Max 3.57W 3.57W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

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