PHKD13N03LT,118
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Nexperia USA Inc. PHKD13N03LT,118

Manufacturer No:
PHKD13N03LT,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 10.4A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHKD13N03LT,118 is a dual N-channel logic level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This component utilizes TrenchMOS technology and is packaged in a plastic surface mount package. Although the specific part number PHKD13N03LT,118 is listed as obsolete, it remains relevant for understanding the capabilities and applications of similar MOSFETs from Nexperia.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)10.4 A
Power Dissipation (Pd)3.57 W
Package TypeSurface Mount 8-SO
Channel TypeDual N-channel
Mode of OperationEnhancement Mode

Key Features

  • Dual N-channel configuration for versatile applications.
  • Logic level gate drive for easy interface with microcontrollers and other logic circuits.
  • TrenchMOS technology for improved performance and efficiency.
  • Surface mount package for ease of integration into modern PCB designs.
  • High continuous drain current and moderate power dissipation capabilities.

Applications

The PHKD13N03LT,118 is suitable for a variety of applications across different industries, including:

  • Automotive electronics: For power management and control in vehicles.
  • Industrial automation: In motor drives, power supplies, and other industrial control systems.
  • Consumer electronics: In power management circuits for devices such as laptops, smartphones, and other portable electronics.
  • Power supplies: For efficient switching in DC-DC converters and other power supply units.

Q & A

  1. What is the voltage rating of the PHKD13N03LT,118 MOSFET?
    The voltage rating (Vds) of the PHKD13N03LT,118 is 30 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current (Id) is 10.4 A.
  3. What type of package does the PHKD13N03LT,118 use?
    The PHKD13N03LT,118 is packaged in a surface mount 8-SO package.
  4. Is the PHKD13N03LT,118 still in production?
    No, the PHKD13N03LT,118 is listed as obsolete and is no longer manufactured.
  5. What technology does this MOSFET use?
    The PHKD13N03LT,118 uses TrenchMOS technology.
  6. What are the key applications of this MOSFET?
    Key applications include automotive electronics, industrial automation, consumer electronics, and power supplies.
  7. What is the power dissipation capability of this MOSFET?
    The power dissipation (Pd) is 3.57 W.
  8. Is this MOSFET suitable for high-frequency applications?
    While it can be used in various applications, its suitability for high-frequency applications should be evaluated based on specific requirements and performance characteristics.
  9. Can this MOSFET be used in logic level gate drive applications?
    Yes, the PHKD13N03LT,118 is designed for logic level gate drive, making it easy to interface with microcontrollers and other logic circuits.
  10. What is the channel configuration of the PHKD13N03LT,118?
    The PHKD13N03LT,118 has a dual N-channel configuration.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10.4A
Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:752pF @ 15V
Power - Max:3.57W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number PHKD13N03LT,118 PHKD13N03LT,518
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 10.4A 10.4A
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 5V 10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 752pF @ 15V 752pF @ 15V
Power - Max 3.57W 3.57W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

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