FDS89161LZ
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onsemi FDS89161LZ

Manufacturer No:
FDS89161LZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 100V 2.7A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS89161LZ is a dual N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed to offer high performance and reliability in various power management applications. It features advanced PowerTrench technology, which enhances its efficiency and reduces power losses. The MOSFET is packaged in an SOIC-8 configuration, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current2.7 A
Rds On - Drain-Source Resistance105 mOhms @ 10V, 2.7A
Vgs - Gate-Source Voltage±20 V
Pd - Maximum Power Dissipation1.6 W
Vgs(th) - Gate-Source Threshold Voltage2.2 V @ 250 uA

Key Features

  • Dual N-Channel configuration for enhanced performance and flexibility.
  • Shielded Gate technology to reduce gate charge and improve switching speed.
  • Low Rds On (105 mOhms) for minimal power losses.
  • High continuous drain current (2.7 A) for robust operation.
  • ESD protection diode between gate and source for added reliability.

Applications

The FDS89161LZ is suitable for various power management and switching applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial control systems.

Q & A

  1. What is the drain-source breakdown voltage of the FDS89161LZ?
    The drain-source breakdown voltage is 100 V.
  2. What is the continuous drain current rating of the FDS89161LZ?
    The continuous drain current rating is 2.7 A.
  3. What is the typical Rds On of the FDS89161LZ?
    The typical Rds On is 105 mOhms @ 10V, 2.7A.
  4. What is the package type of the FDS89161LZ?
    The package type is SOIC-8.
  5. Does the FDS89161LZ have ESD protection?
    Yes, it has an ESD protection diode between the gate and source.
  6. What is the maximum power dissipation of the FDS89161LZ?
    The maximum power dissipation is 1.6 W.
  7. What is the gate-source threshold voltage of the FDS89161LZ?
    The gate-source threshold voltage is 2.2 V @ 250 uA.
  8. What technology is used in the FDS89161LZ?
    The FDS89161LZ uses advanced PowerTrench technology.
  9. What are some common applications of the FDS89161LZ?
    Common applications include DC-DC converters, motor control systems, power amplifiers, and automotive/industrial control systems.
  10. Is the FDS89161LZ RoHS compliant?
    Yes, the FDS89161LZ is RoHS compliant.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:2.7A
Rds On (Max) @ Id, Vgs:105mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:302pF @ 50V
Power - Max:1.6W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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