FDMC8097AC
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onsemi FDMC8097AC

Manufacturer No:
FDMC8097AC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 150V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8097AC is a dual N and P-Channel enhancement mode Power MOSFET produced by onsemi. This device is fabricated using onsemi's advanced POWERTRENCH process, which is designed to minimize on-state resistance while maintaining superior switching performance. This technology enables the implementation of active clamp topology, resulting in high power density. The FDMC8097AC is packaged in a WDFN8 3x3, 0.65P (Power33) case and is Pb-Free, Halide Free, and RoHS compliant.

Key Specifications

Parameter Q1 (N-Channel) Q2 (P-Channel) Unit
VDS (Drain to Source Voltage) 150 -150 V
VGS (Gate to Source Voltage) ±20 ±25 V
ID (Drain Current Continuous at TC = 25°C) 2.4 -0.9 A
ID (Drain Current Continuous at TC = 100°C) 1.9 -0.7 A
RDS(on) (On-State Resistance at VGS = 10 V, ID = 2.4 A) 155 mΩ 1200 mΩ
RDS(on) (On-State Resistance at VGS = 6 V, ID = 2 A) 212 mΩ 1400 mΩ
PD (Power Dissipation at TA = 25°C) 1.9 1.9 W
TJ, TSTG (Operating and Storage Junction Temperature Range) -55 to +150 -55 to +150 °C

Key Features

  • Dual N and P-Channel enhancement mode Power MOSFETs
  • Advanced POWERTRENCH process for low on-state resistance and high switching performance
  • Optimized for Active Clamp Forward Converters
  • Pb-Free, Halide Free, and RoHS compliant
  • WDFN8 3x3, 0.65P (Power33) package
  • High power density due to reduced area for active clamp topology implementation

Applications

  • DC-DC Converters
  • Active Clamp Forward Converters

Q & A

  1. What is the FDMC8097AC MOSFET?

    The FDMC8097AC is a dual N and P-Channel enhancement mode Power MOSFET produced by onsemi, using the advanced POWERTRENCH process.

  2. What are the key specifications of the FDMC8097AC?

    The key specifications include a drain to source voltage of 150 V for the N-Channel and -150 V for the P-Channel, on-state resistance of 155 mΩ at VGS = 10 V for the N-Channel, and 1200 mΩ at VGS = -10 V for the P-Channel.

  3. What package type is the FDMC8097AC available in?

    The FDMC8097AC is available in a WDFN8 3x3, 0.65P (Power33) package.

  4. Is the FDMC8097AC RoHS compliant?
  5. What are the typical applications of the FDMC8097AC?

    The FDMC8097AC is typically used in DC-DC converters and Active Clamp Forward Converters.

  6. What is the maximum continuous drain current for the N-Channel at TC = 25°C?

    The maximum continuous drain current for the N-Channel at TC = 25°C is 2.4 A.

  7. What is the maximum on-state resistance for the P-Channel at VGS = -10 V?

    The maximum on-state resistance for the P-Channel at VGS = -10 V is 1200 mΩ.

  8. What is the thermal resistance, junction-to-ambient for the device?

    The thermal resistance, junction-to-ambient for the device is 65 °C/W when mounted on a 1 in² pad of 2 oz copper.

  9. What is the operating and storage junction temperature range for the FDMC8097AC?

    The operating and storage junction temperature range is -55 to +150 °C.

  10. What is the single pulse avalanche energy for the N-Channel?

    The single pulse avalanche energy for the N-Channel is 24 mJ.

Product Attributes

FET Type:N and P-Channel
FET Feature:Standard
Drain to Source Voltage (Vdss):150V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta), 900mA (Tc)
Rds On (Max) @ Id, Vgs:155mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:395pF @ 75V
Power - Max:1.9W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-Power33 (3x3)
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