BUK9K6R8-40EX
  • Share:

Nexperia USA Inc. BUK9K6R8-40EX

Manufacturer No:
BUK9K6R8-40EX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 40A 56LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9K6R8-40EX is a high-performance MOSFET array manufactured by Nexperia USA Inc. This device is designed for use in thermally demanding environments and is particularly suited for automotive and other high-reliability applications. It features a dual N-channel configuration, making it versatile for various power management and switching tasks.

Key Specifications

CategorySpecification
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A
Power - Max64W
Mounting TypeSurface Mount
Package / CaseSOT-1205, 8-LFPAK56
Vgs(th) (Max) @ Id2.1V @ 1mA
Rds On (Max) @ Id, Vgs6.1mOhm @ 10A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs22.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V

Key Features

  • High Current Capability: The BUK9K6R8-40EX can handle a continuous drain current of 40A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 6.1mOhm at 10A and 10V, this MOSFET minimizes power losses and enhances efficiency.
  • Logic Level Gate: This feature allows the MOSFET to be driven by logic-level signals, simplifying the design and integration into various systems.
  • High Operating Temperature: The device can operate in a wide temperature range from -55°C to 175°C, making it ideal for thermally demanding environments.
  • Dual N-Channel Configuration: The dual N-channel design provides flexibility and reliability in power management and switching applications.

Applications

The BUK9K6R8-40EX is designed for use in a variety of high-reliability and thermally demanding applications, including:

  • Automotive systems: It is suitable for power management and switching tasks in automotive environments.
  • Industrial power systems: The MOSFET can be used in industrial power supplies, motor control, and other high-power applications.
  • Renewable energy systems: It can be applied in solar and wind power systems where high efficiency and reliability are crucial.
  • Power supplies: The device is suitable for use in high-power DC-DC converters and other power supply applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9K6R8-40EX?
    The maximum drain to source voltage (Vdss) is 40V.
  2. What is the continuous drain current (Id) at 25°C for the BUK9K6R8-40EX?
    The continuous drain current (Id) at 25°C is 40A.
  3. What is the maximum on-resistance (Rds On) of the BUK9K6R8-40EX?
    The maximum on-resistance (Rds On) is 6.1mOhm at 10A and 10V.
  4. What is the operating temperature range of the BUK9K6R8-40EX?
    The operating temperature range is from -55°C to 175°C (TJ).
  5. What type of gate does the BUK9K6R8-40EX have?
    The BUK9K6R8-40EX has a logic level gate.
  6. What is the package type of the BUK9K6R8-40EX?
    The package type is SOT-1205, 8-LFPAK56.
  7. What is the maximum gate charge (Qg) of the BUK9K6R8-40EX?
    The maximum gate charge (Qg) is 22.2nC at 5V.
  8. What is the input capacitance (Ciss) of the BUK9K6R8-40EX?
    The input capacitance (Ciss) is 3000pF at 25V.
  9. In what types of applications is the BUK9K6R8-40EX typically used?
    The BUK9K6R8-40EX is typically used in automotive, industrial power systems, renewable energy systems, and high-power supplies.
  10. Is the BUK9K6R8-40EX RoHS compliant?
    Yes, the BUK9K6R8-40EX is RoHS compliant.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:40A
Rds On (Max) @ Id, Vgs:6.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:3000pF @ 25V
Power - Max:64W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-1205, 8-LFPAK56
Supplier Device Package:LFPAK56D
0 Remaining View Similar

In Stock

$1.76
218

Please send RFQ , we will respond immediately.

Related Product By Categories

NX3020NAKS,115
NX3020NAKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 180MA 6TSSOP
NX1029X,115
NX1029X,115
Nexperia USA Inc.
MOSFET N/P-CH 60V/50V SOT666
FDC6401N
FDC6401N
onsemi
MOSFET 2N-CH 20V 3A SSOT-6
NTLUD3A50PZTAG
NTLUD3A50PZTAG
onsemi
MOSFET 2P-CH 20V 2.8A UDFN
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
2N7002KS6
2N7002KS6
Rectron USA
MOSFET 2 N-CH 60V 250MA SOT363
PMDXB600UNEL,147
PMDXB600UNEL,147
Nexperia USA Inc.
0.6A, 20V, 2-ELEMENT, N CHANNEL,
NTMFD4901NFT1G
NTMFD4901NFT1G
onsemi
MOSFET 2N-CH 30V 8DFN
NTMFD4C86NT1G
NTMFD4C86NT1G
onsemi
MOSFET 2N-CH 30V 8DFN
2N7002BKS/ZLX
2N7002BKS/ZLX
Nexperia USA Inc.
MOSFET 2 N-CH 60V 300MA SOT363
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G
onsemi
MOSFET 2N-CH 60V 6A SO8FL

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
PBSS4041SPN,115
PBSS4041SPN,115
Nexperia USA Inc.
TRANS NPN/PNP 60V 6.7A/5.9A 8SO
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO