Overview
The BC847BPN/DG/B2,115 is a general-purpose transistor array produced by Nexperia USA Inc. This component is part of the BC847BPN series, which features a pair of NPN and PNP bipolar junction transistors (BJTs) in a single SOT363 (SC-88) Surface-Mounted Device (SMD) package. This configuration makes it ideal for applications requiring both NPN and PNP transistors, reducing the number of components and board space.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 45 | V |
| Collector Current (IC) | - | - | - | 100 | mA |
| DC Current Gain (hFE) | VCE = 5 V; IC = 2 mA | 200 | - | 450 | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 10 mA; IB = 0.5 mA | - | - | 100 mV | - |
| Base-Emitter Saturation Voltage (VBEsat) | IC = 10 mA; IB = 0.5 mA | - | 755 | - | mV |
| Collector Capacitance (Cc) | IE = ie = 0 A; VCB = 10 V; f = 1 MHz | - | - | 1.5 pF (NPN), 2.2 pF (PNP) | - |
| Transition Frequency (fT) | IC = 10 mA; VCE = 5 V; f = 100 MHz | 100 | - | - | MHz |
| Total Power Dissipation (Ptot) | Tamb ≤25 °C | - | - | 220 mW (per transistor), 300 mW (per device) | - |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
Key Features
- Low collector capacitance and low collector-emitter saturation voltage, enhancing switching and amplification performance.
- Closely matched current gain, ensuring consistent operation between the NPN and PNP transistors.
- Compact SOT363 (SC-88) package, reducing board space and the number of components required.
- No mutual interference between the transistors, improving overall system reliability.
Applications
The BC847BPN/DG/B2,115 is suitable for a variety of general-purpose switching and amplification applications. It is commonly used in electronic circuits that require both NPN and PNP transistors, such as audio amplifiers, switching circuits, and other general-purpose electronic devices.
Q & A
- What is the BC847BPN/DG/B2,115? The BC847BPN/DG/B2,115 is a general-purpose transistor array featuring a pair of NPN and PNP bipolar junction transistors in a single SOT363 package.
- What is the collector-emitter voltage rating of the BC847BPN/DG/B2,115? The collector-emitter voltage (VCEO) is rated at 45 V.
- What is the maximum collector current for this transistor? The maximum collector current (IC) is 100 mA.
- What are the key features of the BC847BPN/DG/B2,115? Key features include low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and a compact SOT363 package.
- What are the typical applications for the BC847BPN/DG/B2,115? It is used in general-purpose switching and amplification applications, such as audio amplifiers and switching circuits.
- What is the total power dissipation for this transistor? The total power dissipation (Ptot) is 220 mW per transistor and 300 mW per device at Tamb ≤25 °C.
- What is the junction temperature rating for the BC847BPN/DG/B2,115? The junction temperature (Tj) is rated up to 150 °C.
- Is the BC847BPN/DG/B2,115 still in production? The BC847BPN/DG/B2,115 is listed as obsolete and no longer manufactured.
- What package type does the BC847BPN/DG/B2,115 use? It uses the SOT363 (SC-88) Surface-Mounted Device (SMD) package.
- What are the benefits of using a closely matched current gain in the BC847BPN/DG/B2,115? Closely matched current gain ensures consistent operation between the NPN and PNP transistors, improving overall system performance and reliability.
