Overview
The BC846S/DG/B2,115 is an NPN general-purpose double transistor produced by Nexperia USA Inc. This component is designed to provide two independent NPN transistors in a single package, which helps in reducing the number of components and board space in electronic circuits. The transistor is housed in a 6-TSSOP (SC-88, SOT-363) package, making it suitable for surface mount applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Transistor Type | - | - | - | 2 NPN (Dual) | - |
| Collector-Base Breakdown Voltage (VCB0) | IE = 0 A; VCB = 30 V | - | - | 80 | V |
| Collector-Emitter Breakdown Voltage (VCEO) | IB = 0 A; IC = 2 mA | - | - | 65 | V |
| Emitter-Base Breakdown Voltage (VEBO) | IC = 0 A; IE = 100 µA | - | - | 6 | V |
| Collector Current (IC) | - | - | - | 100 | mA |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C | - | - | 300 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Operating Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
| DC Current Gain (hFE) | IC = 2 mA; VCE = 5 V | 110 | - | - | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 100 mA; IB = 5 mA | - | - | 300 | mV |
| Transition Frequency (fT) | IC = 10 mA; VCE = 5 V; f = 100 MHz | - | - | 100 | MHz |
Key Features
- Two independent NPN transistors in a single 6-TSSOP (SC-88, SOT-363) package, reducing component count and board space.
- No mutual interference between the transistors.
- General-purpose switching and small signal amplification capabilities.
- High collector-emitter breakdown voltage of up to 65 V.
- Low collector-emitter saturation voltage of up to 300 mV.
- High DC current gain (hFE) of at least 110.
Applications
The BC846S/DG/B2,115 is suitable for a variety of applications, including:
- General-purpose switching circuits.
- Small signal amplification in audio and other electronic circuits.
- Automotive and industrial control systems where space and component count need to be minimized.
- Consumer electronics requiring reliable and compact transistor solutions.
Q & A
- What is the package type of the BC846S/DG/B2,115 transistor?
The BC846S/DG/B2,115 is packaged in a 6-TSSOP (SC-88, SOT-363) package. - What is the maximum collector current of the BC846S/DG/B2,115?
The maximum collector current is 100 mA. - What is the maximum collector-emitter breakdown voltage of the BC846S/DG/B2,115?
The maximum collector-emitter breakdown voltage is 65 V. - What is the typical DC current gain (hFE) of the BC846S/DG/B2,115?
The typical DC current gain (hFE) is 110 at IC = 2 mA and VCE = 5 V. - What is the maximum junction temperature of the BC846S/DG/B2,115?
The maximum junction temperature is 150 °C. - What are the primary applications of the BC846S/DG/B2,115?
The primary applications include general-purpose switching and small signal amplification. - Is the BC846S/DG/B2,115 suitable for surface mount applications?
Yes, it is designed for surface mount applications. - What is the maximum total power dissipation of the BC846S/DG/B2,115 at ambient temperatures up to 25 °C?
The maximum total power dissipation is 300 mW. - Does the BC846S/DG/B2,115 have mutual interference between the transistors?
No, there is no mutual interference between the transistors. - What is the transition frequency of the BC846S/DG/B2,115?
The transition frequency is 100 MHz at IC = 10 mA and VCE = 5 V.
