Overview
The BC846S/DG/B3X is an NPN general-purpose double transistor produced by Nexperia USA Inc. This component is designed to offer two transistors in a single package, which helps in reducing the number of components and the overall board space. The BC846S is housed in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is a constraint.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| V(BR)CBO - Collector-Base Breakdown Voltage | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 80 | - | - | V |
| V(BR)CEO - Collector-Emitter Breakdown Voltage | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 65 | - | - | V |
| V(BR)EBO - Emitter-Base Breakdown Voltage | IC = 0 A; IE = 100 µA; Tamb = 25 °C | 6 | - | - | V |
| hFE - DC Current Gain | VCE = 5 V; IC = 2 mA; Tamb = 25 °C | 110 | - | - | - |
| VCEsat - Collector-Emitter Saturation Voltage | IC = 100 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | - | - | 300 | mV |
| VBEsat - Base-Emitter Saturation Voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | - | 770 | - | mV |
| Ptot - Total Power Dissipation | Tamb ≤ 25 °C | - | - | 300 | mW |
| Tj - Junction Temperature | - | - | - | 150 | °C |
| Tamb - Ambient Temperature | - | -65 | - | 150 | °C |
Key Features
- Two NPN general-purpose transistors in a single SOT363 (SC-88) package, reducing component count and board space.
- High collector-base and collector-emitter breakdown voltages (V(BR)CBO = 80 V, V(BR)CEO = 65 V).
- High DC current gain (hFE) with a minimum value of 110.
- Low collector-emitter saturation voltage (VCEsat ≤ 300 mV).
- Compact SMD plastic package suitable for surface mounting.
- No mutual interference between the transistors, ensuring reliable operation.
Applications
- General-purpose switching and amplification in electronic circuits.
- Automotive and industrial control systems.
- Consumer electronics such as audio equipment and home appliances.
- Mobile and wearable devices where space efficiency is crucial.
- Power management and computing systems requiring reliable transistor performance.
Q & A
- What is the package type of the BC846S/DG/B3X transistor?
The BC846S/DG/B3X is housed in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
- What are the key benefits of using the BC846S/DG/B3X transistor?
The key benefits include reducing the number of components and board space, and no mutual interference between the transistors.
- What is the maximum collector-emitter breakdown voltage of the BC846S/DG/B3X transistor?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 65 V.
- What is the typical DC current gain (hFE) of the BC846S/DG/B3X transistor?
The typical DC current gain (hFE) is 110.
- What is the maximum total power dissipation of the BC846S/DG/B3X transistor at ambient temperatures up to 25 °C?
The maximum total power dissipation (Ptot) is 300 mW.
- What is the maximum junction temperature for the BC846S/DG/B3X transistor?
The maximum junction temperature (Tj) is 150 °C.
- What are the typical applications of the BC846S/DG/B3X transistor?
Typical applications include general-purpose switching and amplification, automotive and industrial control systems, consumer electronics, mobile and wearable devices, and power management systems.
- How does the BC846S/DG/B3X transistor reduce board space?
The BC846S/DG/B3X transistor reduces board space by integrating two NPN general-purpose transistors into a single SOT363 package.
- What is the collector-emitter saturation voltage (VCEsat) of the BC846S/DG/B3X transistor?
The collector-emitter saturation voltage (VCEsat) is ≤ 300 mV.
- Is the BC846S/DG/B3X transistor suitable for high-temperature environments?
The transistor can operate in ambient temperatures ranging from -65 °C to 150 °C, making it suitable for various environmental conditions.
