Overview
The MBT6429DW1T1G is an NPN silicon amplifier transistor produced by onsemi. This device is designed to be Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications where environmental and regulatory compliance are crucial. The transistor is packaged in the SC-88 (SOT-363) case, which is compact and suitable for surface mount technology (SMT) assembly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | Vdc |
| Collector-Base Voltage | VCBO | 55 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation (TA = 25°C) | PD | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 833 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mA, VCE = 5.0 Vdc) | hFE | 500 - 1250 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.2 - 0.6 | Vdc |
| Base-Emitter On Voltage (IC = 1.0 mA, VCE = 5.0 Vdc) | VBE(on) | 0.56 - 0.66 | Vdc |
| Current-Gain - Bandwidth Product (IC = 1.0 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 - 700 | MHz |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental and regulatory compliance.
- Compact SC-88 (SOT-363) package suitable for surface mount technology (SMT) assembly.
- High collector-emitter voltage (VCEO) of 45 Vdc and collector-base voltage (VCBO) of 55 Vdc.
- Continuous collector current (IC) of up to 200 mA.
- Low thermal resistance, junction-to-ambient (RJA) of 833 °C/W.
- Wide operating temperature range from -55°C to +150°C.
- High DC current gain (hFE) ranging from 500 to 1250.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter on voltage (VBE(on)).
- High current-gain - bandwidth product (fT) of up to 700 MHz.
Applications
The MBT6429DW1T1G is versatile and can be used in various electronic circuits and systems, including:
- Amplifier circuits: Due to its high DC current gain and low saturation voltage, it is suitable for amplifier applications.
- Switching circuits: The transistor's ability to handle high collector currents and voltages makes it suitable for switching applications.
- Audio and signal processing: Its low noise characteristics and high bandwidth product make it a good choice for audio and signal processing circuits.
- Automotive and industrial control systems: The device's robustness and wide operating temperature range make it suitable for use in harsh environments.
Q & A
- What is the collector-emitter voltage rating of the MBT6429DW1T1G?
The collector-emitter voltage (VCEO) rating is 45 Vdc. - What is the package type of the MBT6429DW1T1G?
The transistor is packaged in the SC-88 (SOT-363) case. - Is the MBT6429DW1T1G RoHS compliant?
Yes, the MBT6429DW1T1G is Pb-free, halogen-free, and RoHS compliant. - What is the maximum continuous collector current of the MBT6429DW1T1G?
The maximum continuous collector current (IC) is 200 mA. - What is the thermal resistance, junction-to-ambient (RJA) of the MBT6429DW1T1G?
The thermal resistance, junction-to-ambient (RJA), is 833 °C/W. - What is the operating temperature range of the MBT6429DW1T1G?
The operating temperature range is from -55°C to +150°C. - What is the DC current gain (hFE) of the MBT6429DW1T1G?
The DC current gain (hFE) ranges from 500 to 1250. - What is the collector-emitter saturation voltage (VCE(sat)) of the MBT6429DW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is between 0.2 and 0.6 Vdc. - What is the base-emitter on voltage (VBE(on)) of the MBT6429DW1T1G?
The base-emitter on voltage (VBE(on)) is between 0.56 and 0.66 Vdc. - What is the current-gain - bandwidth product (fT) of the MBT6429DW1T1G?
The current-gain - bandwidth product (fT) is up to 700 MHz.
