Overview
The PBSS4160DSH is a 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor pair manufactured by Nexperia USA Inc. This component is part of the Breakthrough In Small Signal (BISS) transistor family and is packaged in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. It is designed to offer high performance and efficiency in various low-power switching applications.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 60 | V |
| IC | Collector current | - | - | 1 | A | |
| ICM | Peak collector current | Single pulse; tp ≤ 1 ms | - | - | 2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 1 A; IB = 100 mA | - | 200 | 250 | mΩ |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 290-700 | mW |
| Tj | Junction temperature | - | - | 150 | °C | |
| Tamb | Ambient temperature | - | -65 | 150 | °C | |
| Tstg | Storage temperature | - | -65 | 150 | °C |
Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
- Dual low power switches (e.g., motors, fans)
- Automotive applications
Q & A
- What is the collector-emitter voltage rating of the PBSS4160DSH transistor?
The collector-emitter voltage rating is up to 60 V.
- What is the maximum collector current of the PBSS4160DSH transistor?
The maximum collector current is 1 A, with a peak collector current of 2 A for single pulses.
- What is the collector-emitter saturation resistance of the PBSS4160DSH transistor?
The collector-emitter saturation resistance is typically 200-250 mΩ at IC = 1 A and IB = 100 mA.
- What is the total power dissipation of the PBSS4160DSH transistor?
The total power dissipation varies from 290 mW to 700 mW depending on the PCB type and mounting conditions.
- What is the junction temperature limit of the PBSS4160DSH transistor?
The junction temperature limit is 150 °C.
- What are the storage and ambient temperature ranges for the PBSS4160DSH transistor?
The storage and ambient temperature ranges are both -65 °C to 150 °C.
- What package type is used for the PBSS4160DSH transistor?
The transistor is packaged in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
- Is the PBSS4160DSH transistor compliant with RoHS and other environmental regulations?
Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives, and it does not contain REACH SVHC substances exceeding 1000 ppm.
- What are some typical applications for the PBSS4160DSH transistor?
Typical applications include dual low power switches (e.g., motors, fans) and automotive applications.
- What is the PNP/PNP complement for the PBSS4160DSH transistor?
The PNP/PNP complement is the PBSS5160DS transistor.
