PBSS4160DSH
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Nexperia USA Inc. PBSS4160DSH

Manufacturer No:
PBSS4160DSH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 60V 0.87A SC-74
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4160DSH is a 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor pair manufactured by Nexperia USA Inc. This component is part of the Breakthrough In Small Signal (BISS) transistor family and is packaged in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. It is designed to offer high performance and efficiency in various low-power switching applications.

Key Specifications

Symbol Parameter Conditions Min Max Unit
VCEO Collector-emitter voltage Open base - - 60 V
IC Collector current - - 1 A
ICM Peak collector current Single pulse; tp ≤ 1 ms - - 2 A
RCEsat Collector-emitter saturation resistance IC = 1 A; IB = 100 mA - 200 250
Ptot Total power dissipation Tamb ≤ 25 °C - - 290-700 mW
Tj Junction temperature - - 150 °C
Tamb Ambient temperature - -65 150 °C
Tstg Storage temperature - -65 150 °C

Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • Dual low power switches (e.g., motors, fans)
  • Automotive applications

Q & A

  1. What is the collector-emitter voltage rating of the PBSS4160DSH transistor?

    The collector-emitter voltage rating is up to 60 V.

  2. What is the maximum collector current of the PBSS4160DSH transistor?

    The maximum collector current is 1 A, with a peak collector current of 2 A for single pulses.

  3. What is the collector-emitter saturation resistance of the PBSS4160DSH transistor?

    The collector-emitter saturation resistance is typically 200-250 mΩ at IC = 1 A and IB = 100 mA.

  4. What is the total power dissipation of the PBSS4160DSH transistor?

    The total power dissipation varies from 290 mW to 700 mW depending on the PCB type and mounting conditions.

  5. What is the junction temperature limit of the PBSS4160DSH transistor?

    The junction temperature limit is 150 °C.

  6. What are the storage and ambient temperature ranges for the PBSS4160DSH transistor?

    The storage and ambient temperature ranges are both -65 °C to 150 °C.

  7. What package type is used for the PBSS4160DSH transistor?

    The transistor is packaged in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

  8. Is the PBSS4160DSH transistor compliant with RoHS and other environmental regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives, and it does not contain REACH SVHC substances exceeding 1000 ppm.

  9. What are some typical applications for the PBSS4160DSH transistor?

    Typical applications include dual low power switches (e.g., motors, fans) and automotive applications.

  10. What is the PNP/PNP complement for the PBSS4160DSH transistor?

    The PNP/PNP complement is the PBSS5160DS transistor.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):870mA
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:250mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 5V
Power - Max:290mW
Frequency - Transition:220MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:6-TSOP
0 Remaining View Similar

In Stock

$0.41
1,328

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Same Series
PBSS4160DS,115
PBSS4160DS,115
TRANS 2NPN 60V 1A 6TSOP
PBSS4160DSZ
PBSS4160DSZ
TRANS 2NPN 60V 1A SC-74

Similar Products

Part Number PBSS4160DSH PBSS4160DSZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type 2 NPN (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 870mA 1A
Voltage - Collector Emitter Breakdown (Max) 60V 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A 250mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V 250 @ 1mA, 5V
Power - Max 290mW 700mW
Frequency - Transition 220MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-74, SOT-457 SC-74, SOT-457
Supplier Device Package 6-TSOP 6-TSOP

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