PMV65XP,215
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Nexperia USA Inc. PMV65XP,215

Manufacturer No:
PMV65XP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for low power applications and offers several key benefits, including low threshold voltage and low on-state resistance, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
TypeP-Channel Enhancement Mode MOSFET
Drain-Source Voltage (Vds)20 V
Drain Current (Id)2.8 A
On-State Resistance (Rds(on))74 mΩ @ 2.8 A, 4.5 V
Gate-Source Voltage (Vgs)±12 V
Input Capacitance (Ciss)744 pF @ 20 V
Gate Charge (Qg)7.7 nC @ 4 V
PackageTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
RoHS StatusROHS3 Compliant

Key Features

  • Low threshold voltage
  • Low on-state resistance
  • Trench MOSFET technology for improved performance
  • Compact SOT23 package for space-efficient designs

Applications

  • Low power DC-to-DC converters
  • Load switching
  • Battery management
  • Battery-powered portable equipment

Q & A

  1. What is the PMV65XP,215?
    The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.
  2. What is the maximum drain-source voltage of the PMV65XP,215?
    The maximum drain-source voltage is 20 V.
  3. What is the maximum drain current of the PMV65XP,215?
    The maximum drain current is 2.8 A.
  4. What is the on-state resistance of the PMV65XP,215?
    The on-state resistance is 74 mΩ @ 2.8 A, 4.5 V.
  5. What is the gate-source voltage range for the PMV65XP,215?
    The gate-source voltage range is ±12 V.
  6. What package types are available for the PMV65XP,215?
    The device is available in TO-236-3, SC-59, and SOT-23-3 packages.
  7. Is the PMV65XP,215 RoHS compliant?
    Yes, the PMV65XP,215 is ROHS3 compliant.
  8. What are some common applications of the PMV65XP,215?
    Common applications include low power DC-to-DC converters, load switching, battery management, and battery-powered portable equipment.
  9. What technology does the PMV65XP,215 use?
    The PMV65XP,215 uses Trench MOSFET technology.
  10. What is the input capacitance of the PMV65XP,215?
    The input capacitance is 744 pF @ 20 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:744 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
PMV65XPVL
PMV65XPVL
MOSFET P-CH 20V 2.8A TO236AB

Similar Products

Part Number PMV65XP,215 PMV65XP1215 PMV65XPE215
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
FET Type P-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 20 V - -
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V - -
Rds On (Max) @ Id, Vgs 74mOhm @ 2.8A, 4.5V - -
Vgs(th) (Max) @ Id 900mV @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V - -
Vgs (Max) ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 744 pF @ 20 V - -
FET Feature - - -
Power Dissipation (Max) 480mW (Ta) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount - -
Supplier Device Package TO-236AB - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -

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