PMV65XP,215
  • Share:

Nexperia USA Inc. PMV65XP,215

Manufacturer No:
PMV65XP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for low power applications and offers several key benefits, including low threshold voltage and low on-state resistance, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
TypeP-Channel Enhancement Mode MOSFET
Drain-Source Voltage (Vds)20 V
Drain Current (Id)2.8 A
On-State Resistance (Rds(on))74 mΩ @ 2.8 A, 4.5 V
Gate-Source Voltage (Vgs)±12 V
Input Capacitance (Ciss)744 pF @ 20 V
Gate Charge (Qg)7.7 nC @ 4 V
PackageTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
RoHS StatusROHS3 Compliant

Key Features

  • Low threshold voltage
  • Low on-state resistance
  • Trench MOSFET technology for improved performance
  • Compact SOT23 package for space-efficient designs

Applications

  • Low power DC-to-DC converters
  • Load switching
  • Battery management
  • Battery-powered portable equipment

Q & A

  1. What is the PMV65XP,215?
    The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.
  2. What is the maximum drain-source voltage of the PMV65XP,215?
    The maximum drain-source voltage is 20 V.
  3. What is the maximum drain current of the PMV65XP,215?
    The maximum drain current is 2.8 A.
  4. What is the on-state resistance of the PMV65XP,215?
    The on-state resistance is 74 mΩ @ 2.8 A, 4.5 V.
  5. What is the gate-source voltage range for the PMV65XP,215?
    The gate-source voltage range is ±12 V.
  6. What package types are available for the PMV65XP,215?
    The device is available in TO-236-3, SC-59, and SOT-23-3 packages.
  7. Is the PMV65XP,215 RoHS compliant?
    Yes, the PMV65XP,215 is ROHS3 compliant.
  8. What are some common applications of the PMV65XP,215?
    Common applications include low power DC-to-DC converters, load switching, battery management, and battery-powered portable equipment.
  9. What technology does the PMV65XP,215 use?
    The PMV65XP,215 uses Trench MOSFET technology.
  10. What is the input capacitance of the PMV65XP,215?
    The input capacitance is 744 pF @ 20 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:744 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.46
2,103

Please send RFQ , we will respond immediately.

Same Series
PMV65XPVL
PMV65XPVL
MOSFET P-CH 20V 2.8A TO236AB

Similar Products

Part Number PMV65XP,215 PMV65XP1215 PMV65XPE215
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
FET Type P-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 20 V - -
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V - -
Rds On (Max) @ Id, Vgs 74mOhm @ 2.8A, 4.5V - -
Vgs(th) (Max) @ Id 900mV @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V - -
Vgs (Max) ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 744 pF @ 20 V - -
FET Feature - - -
Power Dissipation (Max) 480mW (Ta) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount - -
Supplier Device Package TO-236AB - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -

Related Product By Categories

STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP