PMV65XP1215
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NXP USA Inc. PMV65XP1215

Manufacturer No:
PMV65XP1215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XP,215 is a single P-channel Trench MOSFET manufactured by Nexperia USA Inc. This component is designed for high-performance applications requiring low on-state resistance and high current handling. It is packaged in a TO-236AB (SOT23) surface-mounted package, making it suitable for a variety of compact electronic designs.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)20V
Current – Continuous Drain (Id) @ 25°C2.8A
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5VV
Rds On (Max) @ Id, Vgs74mOhm @ 2.8A, 4.5VmΩ
Vgs(th) (Max) @ Id900mV @ 250µAmV
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 4.5 VnC
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds744 pF @ 20 VpF
Power Dissipation (Max)480mW (Ta)mW
Operating Temperature-55°C ~ 150°C (TJ)°C
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB

Key Features

  • P-Channel Trench MOSFET with low on-state resistance (Rds On) of up to 74 mΩ at 2.8 A and 4.5 Vgs.
  • High current handling capability with continuous drain current of 2.8 A at 25°C.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact TO-236AB (SOT23) surface-mounted package for space-efficient designs.
  • Low gate charge (Qg) of 7.7 nC at 4.5 V, facilitating efficient switching.
  • High gate-source voltage tolerance of ±12 V.

Applications

The PMV65XP,215 is suitable for various applications requiring high current and low on-state resistance, such as:

  • Power management in consumer electronics.
  • Automotive systems, including battery management and motor control.
  • Industrial control systems and power supplies.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the maximum drain-source voltage of the PMV65XP,215?
    The maximum drain-source voltage (Vdss) is 20 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current (Id) at 25°C is 2.8 A.
  3. What is the typical on-state resistance (Rds On) of the PMV65XP,215?
    The typical on-state resistance (Rds On) is 74 mΩ at 2.8 A and 4.5 Vgs.
  4. What is the gate-source threshold voltage (Vgs(th))?
    The gate-source threshold voltage (Vgs(th)) is 900 mV at 250 µA.
  5. What is the maximum gate charge (Qg) at 4.5 V?
    The maximum gate charge (Qg) at 4.5 V is 7.7 nC.
  6. What is the maximum power dissipation?
    The maximum power dissipation is 480 mW (Ta).
  7. What is the operating temperature range of the PMV65XP,215?
    The operating temperature range is from -55°C to 150°C (TJ).
  8. What package type is used for the PMV65XP,215?
    The component is packaged in a TO-236AB (SOT23) surface-mounted package.
  9. What are some common applications for the PMV65XP,215?
    Common applications include power management in consumer electronics, automotive systems, industrial control systems, and portable electronics.
  10. Is the PMV65XP,215 RoHS compliant?
    Yes, the PMV65XP,215 is RoHS compliant.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PMV65XP1215 PMV65XPE215 PMV65XP,215
Manufacturer NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type - - P-Channel
Technology - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - 20 V
Current - Continuous Drain (Id) @ 25°C - - 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs - - 74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id - - 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 7.7 nC @ 4.5 V
Vgs (Max) - - ±12V
Input Capacitance (Ciss) (Max) @ Vds - - 744 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) - - 480mW (Ta)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type - - Surface Mount
Supplier Device Package - - TO-236AB
Package / Case - - TO-236-3, SC-59, SOT-23-3

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