Overview
The PMV65XP,215 is a single P-channel Trench MOSFET manufactured by Nexperia USA Inc. This component is designed for high-performance applications requiring low on-state resistance and high current handling. It is packaged in a TO-236AB (SOT23) surface-mounted package, making it suitable for a variety of compact electronic designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain to Source Voltage (Vdss) | 20 | V |
Current – Continuous Drain (Id) @ 25°C | 2.8 | A |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | V |
Rds On (Max) @ Id, Vgs | 74mOhm @ 2.8A, 4.5V | mΩ |
Vgs(th) (Max) @ Id | 900mV @ 250µA | mV |
Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 4.5 V | nC |
Vgs (Max) | ±12 | V |
Input Capacitance (Ciss) (Max) @ Vds | 744 pF @ 20 V | pF |
Power Dissipation (Max) | 480mW (Ta) | mW |
Operating Temperature | -55°C ~ 150°C (TJ) | °C |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-236AB |
Key Features
- P-Channel Trench MOSFET with low on-state resistance (Rds On) of up to 74 mΩ at 2.8 A and 4.5 Vgs.
- High current handling capability with continuous drain current of 2.8 A at 25°C.
- Wide operating temperature range from -55°C to 150°C.
- Compact TO-236AB (SOT23) surface-mounted package for space-efficient designs.
- Low gate charge (Qg) of 7.7 nC at 4.5 V, facilitating efficient switching.
- High gate-source voltage tolerance of ±12 V.
Applications
The PMV65XP,215 is suitable for various applications requiring high current and low on-state resistance, such as:
- Power management in consumer electronics.
- Automotive systems, including battery management and motor control.
- Industrial control systems and power supplies.
- Portable electronics and battery-powered devices.
Q & A
- What is the maximum drain-source voltage of the PMV65XP,215?
The maximum drain-source voltage (Vdss) is 20 V. - What is the continuous drain current at 25°C?
The continuous drain current (Id) at 25°C is 2.8 A. - What is the typical on-state resistance (Rds On) of the PMV65XP,215?
The typical on-state resistance (Rds On) is 74 mΩ at 2.8 A and 4.5 Vgs. - What is the gate-source threshold voltage (Vgs(th))?
The gate-source threshold voltage (Vgs(th)) is 900 mV at 250 µA. - What is the maximum gate charge (Qg) at 4.5 V?
The maximum gate charge (Qg) at 4.5 V is 7.7 nC. - What is the maximum power dissipation?
The maximum power dissipation is 480 mW (Ta). - What is the operating temperature range of the PMV65XP,215?
The operating temperature range is from -55°C to 150°C (TJ). - What package type is used for the PMV65XP,215?
The component is packaged in a TO-236AB (SOT23) surface-mounted package. - What are some common applications for the PMV65XP,215?
Common applications include power management in consumer electronics, automotive systems, industrial control systems, and portable electronics. - Is the PMV65XP,215 RoHS compliant?
Yes, the PMV65XP,215 is RoHS compliant.