PMV65XP1215
  • Share:

NXP USA Inc. PMV65XP1215

Manufacturer No:
PMV65XP1215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XP,215 is a single P-channel Trench MOSFET manufactured by Nexperia USA Inc. This component is designed for high-performance applications requiring low on-state resistance and high current handling. It is packaged in a TO-236AB (SOT23) surface-mounted package, making it suitable for a variety of compact electronic designs.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)20V
Current – Continuous Drain (Id) @ 25°C2.8A
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5VV
Rds On (Max) @ Id, Vgs74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µAmV
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 4.5 VnC
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds744 pF @ 20 VpF
Power Dissipation (Max)480mW (Ta)mW
Operating Temperature-55°C ~ 150°C (TJ)°C
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB

Key Features

  • P-Channel Trench MOSFET with low on-state resistance (Rds On) of up to 74 mΩ at 2.8 A and 4.5 Vgs.
  • High current handling capability with continuous drain current of 2.8 A at 25°C.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact TO-236AB (SOT23) surface-mounted package for space-efficient designs.
  • Low gate charge (Qg) of 7.7 nC at 4.5 V, facilitating efficient switching.
  • High gate-source voltage tolerance of ±12 V.

Applications

The PMV65XP,215 is suitable for various applications requiring high current and low on-state resistance, such as:

  • Power management in consumer electronics.
  • Automotive systems, including battery management and motor control.
  • Industrial control systems and power supplies.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the maximum drain-source voltage of the PMV65XP,215?
    The maximum drain-source voltage (Vdss) is 20 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current (Id) at 25°C is 2.8 A.
  3. What is the typical on-state resistance (Rds On) of the PMV65XP,215?
    The typical on-state resistance (Rds On) is 74 mΩ at 2.8 A and 4.5 Vgs.
  4. What is the gate-source threshold voltage (Vgs(th))?
    The gate-source threshold voltage (Vgs(th)) is 900 mV at 250 µA.
  5. What is the maximum gate charge (Qg) at 4.5 V?
    The maximum gate charge (Qg) at 4.5 V is 7.7 nC.
  6. What is the maximum power dissipation?
    The maximum power dissipation is 480 mW (Ta).
  7. What is the operating temperature range of the PMV65XP,215?
    The operating temperature range is from -55°C to 150°C (TJ).
  8. What package type is used for the PMV65XP,215?
    The component is packaged in a TO-236AB (SOT23) surface-mounted package.
  9. What are some common applications for the PMV65XP,215?
    Common applications include power management in consumer electronics, automotive systems, industrial control systems, and portable electronics.
  10. Is the PMV65XP,215 RoHS compliant?
    Yes, the PMV65XP,215 is RoHS compliant.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
156

Please send RFQ , we will respond immediately.

Same Series
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMV65XP1215 PMV65XPE215 PMV65XP,215
Manufacturer NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type - - P-Channel
Technology - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - 20 V
Current - Continuous Drain (Id) @ 25°C - - 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs - - 74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id - - 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 7.7 nC @ 4.5 V
Vgs (Max) - - ±12V
Input Capacitance (Ciss) (Max) @ Vds - - 744 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) - - 480mW (Ta)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type - - Surface Mount
Supplier Device Package - - TO-236AB
Package / Case - - TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
SAF7755HV/N205K
SAF7755HV/N205K
NXP USA Inc.
DSP AUDIO MULTI-TUNER
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
LS1027AXE7PQA
LS1027AXE7PQA
NXP USA Inc.
LS1027A-1500 XT SEC
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
74LVC02ADB,112
74LVC02ADB,112
NXP USA Inc.
NOR GATE, LVC/LCX/Z SERIES, 4-FU
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX