CSD19536KTTT
  • Share:

Texas Instruments CSD19536KTTT

Manufacturer No:
CSD19536KTTT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 200A DDPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19536KTT is a 100-V, 2-mΩ N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management tasks. The MOSFET is packaged in a D2PAK (TO-263) plastic package, which is known for its low thermal resistance and robust design.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 100 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) 200 A
Pulsed Drain Current (IDM) 400 A
Power Dissipation (PD) 375 W
Operating Junction Temperature (TJ) -55 to 175 °C
Gate Charge Total (Qg) 118 nC
Gate Charge Gate-to-Drain (Qgd) 17 nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 6 V 2.2
Gate-to-Source Threshold Voltage (VGS(th)) 2.5 V

Key Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

Applications

  • Secondary Side Synchronous Rectifier
  • Hot Swap
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD19536KTT?

    The maximum drain-to-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the CSD19536KTT at VGS = 6 V?

    The typical on-state resistance (RDS(on)) at VGS = 6 V is 2.2 mΩ.

  3. What is the maximum gate-to-source voltage of the CSD19536KTT?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  4. What is the continuous drain current rating of the CSD19536KTT?

    The continuous drain current (ID) is 200 A.

  5. What is the operating junction temperature range of the CSD19536KTT?

    The operating junction temperature range is -55 to 175°C.

  6. Is the CSD19536KTT RoHS compliant?
  7. What package type is used for the CSD19536KTT?

    The CSD19536KTT is packaged in a D2PAK (TO-263) plastic package.

  8. What are some common applications for the CSD19536KTT?

    Common applications include secondary side synchronous rectifier, hot swap, and motor control.

  9. What is the total gate charge (Qg) of the CSD19536KTT?

    The total gate charge (Qg) is 118 nC.

  10. Is the CSD19536KTT avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DDPAK/TO-263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
0 Remaining View Similar

In Stock

$6.34
81

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD19536KTTT CSD18536KTTT CSD19506KTTT CSD19532KTTT CSD19535KTTT CSD19536KTT
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V 80 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 200A (Ta), 349A (Tc) 200A (Ta) 200A (Ta) 200A (Ta) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 2.3mOhm @ 100A, 10V 5.6mOhm @ 90A, 10V 3.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 2.2V @ 250µA 3.2V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 140 nC @ 10 V 156 nC @ 10 V 57 nC @ 10 V 98 nC @ 10 V 153 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 50 V 11430 pF @ 30 V 12200 pF @ 40 V 5060 pF @ 50 V 7930 pF @ 50 V 12000 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 375W (Tc) 250W (Tc) 300W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

ADS1255IDBT
ADS1255IDBT
Texas Instruments
IC ADC 24BIT SIGMA-DELTA 20SSOP
DAC104S085CIMM/NOPB
DAC104S085CIMM/NOPB
Texas Instruments
IC DAC 10BIT V-OUT 10VSSOP
TUSB1105RTZRG4
TUSB1105RTZRG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 16QFN
TLC272ACP
TLC272ACP
Texas Instruments
IC CMOS 2 CIRCUIT 8DIP
OPA2683IDCNR
OPA2683IDCNR
Texas Instruments
IC OPAMP CFA 2 CIRCUIT SOT23-8
THS3110IDGNR
THS3110IDGNR
Texas Instruments
IC OPAMP CFA 1 CIRCUIT 8HVSSOP
LMC7221BIM5X/NOPB
LMC7221BIM5X/NOPB
Texas Instruments
IC COMPAR TNY CMOS RR IN SOT23-5
TLV809EA29DBZR
TLV809EA29DBZR
Texas Instruments
IC SUPERVISOR 1 CHANNEL SOT23-3
LP38691DT-3.3/NOPB
LP38691DT-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 500MA TO252-3
LP38693MP-ADJ
LP38693MP-ADJ
Texas Instruments
IC REG LIN POS ADJ 500MA SOT223
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC
TMP108AIYFFR
TMP108AIYFFR
Texas Instruments
SENSOR DIGITAL -40C-125C 6DSBGA