CSD19536KTTT
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Texas Instruments CSD19536KTTT

Manufacturer No:
CSD19536KTTT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 200A DDPAK
Delivery:
Payment:
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Product Introduction

Overview

The CSD19536KTT is a 100-V, 2-mΩ N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management tasks. The MOSFET is packaged in a D2PAK (TO-263) plastic package, which is known for its low thermal resistance and robust design.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 100 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) 200 A
Pulsed Drain Current (IDM) 400 A
Power Dissipation (PD) 375 W
Operating Junction Temperature (TJ) -55 to 175 °C
Gate Charge Total (Qg) 118 nC
Gate Charge Gate-to-Drain (Qgd) 17 nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 6 V 2.2
Gate-to-Source Threshold Voltage (VGS(th)) 2.5 V

Key Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

Applications

  • Secondary Side Synchronous Rectifier
  • Hot Swap
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD19536KTT?

    The maximum drain-to-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the CSD19536KTT at VGS = 6 V?

    The typical on-state resistance (RDS(on)) at VGS = 6 V is 2.2 mΩ.

  3. What is the maximum gate-to-source voltage of the CSD19536KTT?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  4. What is the continuous drain current rating of the CSD19536KTT?

    The continuous drain current (ID) is 200 A.

  5. What is the operating junction temperature range of the CSD19536KTT?

    The operating junction temperature range is -55 to 175°C.

  6. Is the CSD19536KTT RoHS compliant?
  7. What package type is used for the CSD19536KTT?

    The CSD19536KTT is packaged in a D2PAK (TO-263) plastic package.

  8. What are some common applications for the CSD19536KTT?

    Common applications include secondary side synchronous rectifier, hot swap, and motor control.

  9. What is the total gate charge (Qg) of the CSD19536KTT?

    The total gate charge (Qg) is 118 nC.

  10. Is the CSD19536KTT avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DDPAK/TO-263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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Similar Products

Part Number CSD19536KTTT CSD18536KTTT CSD19506KTTT CSD19532KTTT CSD19535KTTT CSD19536KTT
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V 80 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 200A (Ta), 349A (Tc) 200A (Ta) 200A (Ta) 200A (Ta) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 2.3mOhm @ 100A, 10V 5.6mOhm @ 90A, 10V 3.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 2.2V @ 250µA 3.2V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 140 nC @ 10 V 156 nC @ 10 V 57 nC @ 10 V 98 nC @ 10 V 153 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 50 V 11430 pF @ 30 V 12200 pF @ 40 V 5060 pF @ 50 V 7930 pF @ 50 V 12000 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 375W (Tc) 250W (Tc) 300W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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