CSD19532KTTT
  • Share:

Texas Instruments CSD19532KTTT

Manufacturer No:
CSD19532KTTT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 200A DDPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19532KTTT is a 100-V, N-channel NexFET™ power MOSFET manufactured by Texas Instruments. This device is packaged in a TO-263-3 (D2PAK) package and is designed to minimize losses in power conversion applications. It features ultra-low on-resistance and is suitable for high-power applications requiring efficient switching and low thermal resistance.

Key Specifications

Parameter Value Unit
Manufacturer Texas Instruments
Package Type TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 200 A
On-Resistance (Rds On) @ Id, Vgs 5.6 mΩ @ 90A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 3.2V @ 250µA V
Gate Charge (Qg) @ Vgs 57nC @ 10V nC
Input Capacitance (Ciss) @ Vds 5060pF @ 50V pF
Maximum Gate Voltage (Vgs) ±20 V
Power Dissipation (Max) 250W (Tc) W
Operating Temperature Range -55°C to 175°C (TJ) °C

Key Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

Applications

The CSD19532KTTT is designed for high-power applications, including but not limited to:

  • Power Conversion Systems
  • Switch-Mode Power Supplies
  • Motor Control and Drives
  • High-Current Switching Applications
  • Automotive and Industrial Power Systems

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the CSD19532KTTT?

    The maximum drain to source voltage (Vdss) is 100V.

  2. What is the continuous drain current (Id) rating at 25°C for the CSD19532KTTT?

    The continuous drain current (Id) rating at 25°C is 200A.

  3. What is the on-resistance (Rds On) of the CSD19532KTTT at 90A and 10V Vgs?

    The on-resistance (Rds On) is 5.6 mΩ at 90A and 10V Vgs.

  4. What is the gate threshold voltage (Vgs(th)) of the CSD19532KTTT?

    The gate threshold voltage (Vgs(th)) is 3.2V at 250µA.

  5. Is the CSD19532KTTT RoHS compliant?

    Yes, the CSD19532KTTT is RoHS compliant.

  6. What is the operating temperature range of the CSD19532KTTT?

    The operating temperature range is -55°C to 175°C (TJ).

  7. What package type is the CSD19532KTTT available in?

    The CSD19532KTTT is available in a TO-263-3 (D2PAK) package.

  8. What are some key features of the CSD19532KTTT?

    Key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, Pb-free terminal plating, and RoHS compliance.

  9. What are typical applications for the CSD19532KTTT?

    Typical applications include power conversion systems, switch-mode power supplies, motor control and drives, high-current switching applications, and automotive and industrial power systems.

  10. Where can I find the datasheet for the CSD19532KTTT?

    The datasheet can be found on the Texas Instruments website or through various distributor websites such as Mouser, Heisener, and SnapEDA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5060 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DDPAK/TO-263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
0 Remaining View Similar

In Stock

$2.96
30

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD19532KTTT CSD19535KTTT CSD19536KTTT CSD19532KTT
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 200A (Ta) 200A (Ta) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 90A, 10V 3.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V 5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 98 nC @ 10 V 153 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5060 pF @ 50 V 7930 pF @ 50 V 12000 pF @ 50 V 5060 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 375W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

CDCM61004RHBR
CDCM61004RHBR
Texas Instruments
IC CLK GEN 1:4 LOW JITTER 32QFN
TMS320F2812ZAYAR
TMS320F2812ZAYAR
Texas Instruments
IC MCU
TUSB1105RTZRG4
TUSB1105RTZRG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 16QFN
NE5532D
NE5532D
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8SOIC
TLC272ACP
TLC272ACP
Texas Instruments
IC CMOS 2 CIRCUIT 8DIP
TLV2316IDR
TLV2316IDR
Texas Instruments
IC CMOS 2 CIRCUIT 8SOIC
OPA2683IDCNR
OPA2683IDCNR
Texas Instruments
IC OPAMP CFA 2 CIRCUIT SOT23-8
LMC7221BIM5X/NOPB
LMC7221BIM5X/NOPB
Texas Instruments
IC COMPAR TNY CMOS RR IN SOT23-5
CD4093BMT
CD4093BMT
Texas Instruments
IC GATE NAND 4CH 2-INP 14SOIC
TL431IDR
TL431IDR
Texas Instruments
IC VREF SHUNT ADJ 2.2% 8SOIC
LM20242MHX/NOPB
LM20242MHX/NOPB
Texas Instruments
IC REG BUCK ADJ 2A 20HTSSOP
LP2985IM5-3.1/NOPB
LP2985IM5-3.1/NOPB
Texas Instruments
IC REG LINEAR 3.1V 150MA SOT23-5