CSD19532KTTT
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Texas Instruments CSD19532KTTT

Manufacturer No:
CSD19532KTTT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 200A DDPAK
Delivery:
Payment:
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Product Introduction

Overview

The CSD19532KTTT is a 100-V, N-channel NexFET™ power MOSFET manufactured by Texas Instruments. This device is packaged in a TO-263-3 (D2PAK) package and is designed to minimize losses in power conversion applications. It features ultra-low on-resistance and is suitable for high-power applications requiring efficient switching and low thermal resistance.

Key Specifications

Parameter Value Unit
Manufacturer Texas Instruments
Package Type TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 200 A
On-Resistance (Rds On) @ Id, Vgs 5.6 mΩ @ 90A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 3.2V @ 250µA V
Gate Charge (Qg) @ Vgs 57nC @ 10V nC
Input Capacitance (Ciss) @ Vds 5060pF @ 50V pF
Maximum Gate Voltage (Vgs) ±20 V
Power Dissipation (Max) 250W (Tc) W
Operating Temperature Range -55°C to 175°C (TJ) °C

Key Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

Applications

The CSD19532KTTT is designed for high-power applications, including but not limited to:

  • Power Conversion Systems
  • Switch-Mode Power Supplies
  • Motor Control and Drives
  • High-Current Switching Applications
  • Automotive and Industrial Power Systems

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the CSD19532KTTT?

    The maximum drain to source voltage (Vdss) is 100V.

  2. What is the continuous drain current (Id) rating at 25°C for the CSD19532KTTT?

    The continuous drain current (Id) rating at 25°C is 200A.

  3. What is the on-resistance (Rds On) of the CSD19532KTTT at 90A and 10V Vgs?

    The on-resistance (Rds On) is 5.6 mΩ at 90A and 10V Vgs.

  4. What is the gate threshold voltage (Vgs(th)) of the CSD19532KTTT?

    The gate threshold voltage (Vgs(th)) is 3.2V at 250µA.

  5. Is the CSD19532KTTT RoHS compliant?

    Yes, the CSD19532KTTT is RoHS compliant.

  6. What is the operating temperature range of the CSD19532KTTT?

    The operating temperature range is -55°C to 175°C (TJ).

  7. What package type is the CSD19532KTTT available in?

    The CSD19532KTTT is available in a TO-263-3 (D2PAK) package.

  8. What are some key features of the CSD19532KTTT?

    Key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, Pb-free terminal plating, and RoHS compliance.

  9. What are typical applications for the CSD19532KTTT?

    Typical applications include power conversion systems, switch-mode power supplies, motor control and drives, high-current switching applications, and automotive and industrial power systems.

  10. Where can I find the datasheet for the CSD19532KTTT?

    The datasheet can be found on the Texas Instruments website or through various distributor websites such as Mouser, Heisener, and SnapEDA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5060 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DDPAK/TO-263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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Similar Products

Part Number CSD19532KTTT CSD19535KTTT CSD19536KTTT CSD19532KTT
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 200A (Ta) 200A (Ta) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 90A, 10V 3.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V 5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 98 nC @ 10 V 153 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5060 pF @ 50 V 7930 pF @ 50 V 12000 pF @ 50 V 5060 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 375W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3 DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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