Overview
The MTD6N15T4 is a Power Field Effect Transistor (FET) produced by onsemi, designed for high-speed, low-loss power switching applications. This N-channel enhancement-mode silicon gate MOSFET is packaged in a DPAK (Surface Mount) case, making it suitable for a variety of power management and control systems. The device is optimized for use in switching regulators, converters, solenoid and relay drivers, and other applications requiring fast switching speeds and low on-resistance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 150 | Vdc |
| Drain-Gate Voltage | VDGR | 150 | Vdc |
| Gate-Source Voltage (Continuous/Non-Repetitive) | VGS/VGSM | ±20/±40 | Vdc |
| Drain Current (Continuous/Pulsed) | ID/IDM | 6.0/20 | A |
| Total Power Dissipation @ TC = 25°C | PD | 20 | W |
| Total Power Dissipation @ TA = 25°C | PD | 1.25 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | Vdc |
| Static Drain-Source On-Resistance | RDS(on) | 0.3 | Ω |
| Thermal Resistance - Junction-to-Case | RθJC | 6.25 | °C/W |
Key Features
- Silicon Gate for Fast Switching Speeds
- Low RDS(on) — 0.3 Ω Max
- Rugged — SOA is Power Dissipation Limited
- Source-to-Drain Diode Characterized for Use With Inductive Loads
- Low Drive Requirement — VGS(th) = 4.0 V Max
- Surface Mount Package on 16 mm Tape
- Pb-Free Package Available
Applications
The MTD6N15T4 is designed for various high-speed, low-loss power switching applications, including:
- Switching Regulators
- Converters
- Solenoid and Relay Drivers
- Other power management and control systems requiring fast switching speeds and low on-resistance.
Q & A
- What is the maximum drain-source voltage of the MTD6N15T4? The maximum drain-source voltage (VDSS) is 150 Vdc.
- What is the maximum continuous drain current of the MTD6N15T4? The maximum continuous drain current (ID) is 6.0 A.
- What is the typical on-resistance of the MTD6N15T4? The typical static drain-source on-resistance (RDS(on)) is 0.3 Ω.
- What is the gate threshold voltage range of the MTD6N15T4? The gate threshold voltage (VGS(th)) range is 2.0 to 4.0 Vdc.
- Is the MTD6N15T4 available in a Pb-free package? Yes, the MTD6N15T4 is available in a Pb-free package.
- What is the thermal resistance - junction-to-case of the MTD6N15T4? The thermal resistance - junction-to-case (RθJC) is 6.25 °C/W.
- What are the typical switching times for the MTD6N15T4? The turn-on delay time (td(on)) is typically 50 ns, and the turn-off delay time (td(off)) is typically 200 ns.
- What is the maximum junction temperature of the MTD6N15T4? The maximum junction temperature (TJ) is 150 °C.
- What type of package does the MTD6N15T4 use? The MTD6N15T4 uses a DPAK (Surface Mount) package.
- What are some common applications for the MTD6N15T4? Common applications include switching regulators, converters, solenoid and relay drivers, and other power management systems.
