NTMFS002P03P8ZT1G
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onsemi NTMFS002P03P8ZT1G

Manufacturer No:
NTMFS002P03P8ZT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET, POWER -30V P-CHANNEL, SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS002P03P8ZT1G is a power MOSFET from onsemi, designed as a single P-Channel device in an SO-8FL package. This MOSFET is characterized by its ultra-low on-resistance (RDS(on)) and advanced package technology, which enhances system efficiency and thermal conduction. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for a wide range of applications that require high reliability and environmental compliance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-30V
Gate-to-Source VoltageVGS±25V
Continuous Drain Current (TC = 25°C)ID-263A
Continuous Drain Current (TC = 85°C)ID-189A
Power Dissipation (TC = 25°C)PD138.9W
Pulsed Drain Current (TA = 25°C, tp = 10 µs)IDM-648A
Single Pulse Drain-to-Source Avalanche EnergyEAS212.3mJ
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +150°C
Lead Temperature for Soldering PurposesTL260°C
On-Resistance (VGS = -10 V, ID = -23 A)RDS(on)0.9 - 1.4

Key Features

  • Ultra Low RDS(on) to Improve System Efficiency
  • Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • High Continuous Drain Current and Power Dissipation Capabilities
  • Low Gate Threshold Voltage and High Forward Transconductance
  • Robust Avalanche Energy Rating

Applications

  • Power Load Switch
  • Protection: Reverse Current, Over Voltage, and Reverse Negative Voltage
  • Battery Management
  • High End Notebooks, Tablets, Power Supplies
  • USB PD Adapters, Wireless Charging, Drones, and other Computing and Consumer Devices

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS002P03P8ZT1G MOSFET? The maximum drain-to-source voltage is -30 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -263 A.
  3. What is the on-resistance of the MOSFET at VGS = -10 V and ID = -23 A? The on-resistance is 0.9 - 1.4 mΩ.
  4. Is the NTMFS002P03P8ZT1G MOSFET RoHS compliant? Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  5. What are the typical applications of this MOSFET? Typical applications include power load switch, protection against reverse current, over voltage, and reverse negative voltage, and battery management.
  6. What is the operating junction and storage temperature range of the MOSFET? The operating junction and storage temperature range is -55 to +150 °C.
  7. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.
  8. What is the single pulse drain-to-source avalanche energy rating? The single pulse drain-to-source avalanche energy rating is 212.3 mJ.
  9. What package type does the NTMFS002P03P8ZT1G MOSFET use? The MOSFET uses an SO-8FL package.
  10. What are the benefits of the advanced package technology used in this MOSFET? The advanced package technology provides space-saving and excellent thermal conduction.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40.2A (Ta), 263A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:217 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:14950 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 138.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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