Overview
The NVD5490NLT4G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance, high current capability, and robust thermal performance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a DPAK (TO-252-3) case, which is lead-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 17 | A |
| Continuous Drain Current (TC = 100°C) | ID | 12 | A |
| Power Dissipation (TC = 25°C) | PD | 49 | W |
| Power Dissipation (TC = 100°C) | PD | 24 | W |
| On-Resistance (VGS = 10V, ID = 9A) | RDS(on) | 46-64 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5-2.5 | V |
| Junction-to-Case Thermal Resistance | RJC | 3.1 | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 44 | °C/W |
| Input Capacitance | Ciss | 365 | pF |
| Total Gate Charge | QG(TOT) | 14 | nC |
Key Features
- Low RDS(on) to minimize conduction losses
- High current capability of up to 17A at TC = 25°C
- Avalanche energy specified for robust operation
- AEC-Q101 qualified and PPAP capable for automotive applications
- Pb-free, halogen-free, and RoHS compliant
- Surface mount DPAK package for easy integration
Applications
The NVD5490NLT4G MOSFET is suitable for various power management and switching applications, including:
- Automotive systems (e.g., power steering, fuel pumps, and anti-lock braking systems)
- Industrial power supplies and motor control
- Power tools and equipment
- Renewable energy systems (e.g., solar and wind power)
- General-purpose power switching and DC-DC converters
Q & A
- What is the maximum drain-to-source voltage of the NVD5490NLT4G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current is 17A at TC = 25°C and 12A at TC = 100°C.
- What is the on-resistance of the MOSFET at VGS = 10V and ID = 9A?
The on-resistance (RDS(on)) is between 46mΩ and 64mΩ.
- Is the NVD5490NLT4G MOSFET RoHS compliant?
- What is the junction-to-case thermal resistance of the MOSFET?
The junction-to-case thermal resistance (RJC) is 3.1°C/W.
- What are the key features of the NVD5490NLT4G MOSFET?
The key features include low RDS(on), high current capability, avalanche energy specified, AEC-Q101 qualified, and Pb-free, halogen-free, and RoHS compliant.
- What is the typical gate threshold voltage of the MOSFET?
The gate threshold voltage (VGS(TH)) is between 1.5V and 2.5V.
- What is the input capacitance of the MOSFET?
The input capacitance (Ciss) is 365pF.
- What is the total gate charge of the MOSFET at VGS = 10V?
The total gate charge (QG(TOT)) is 14nC.
- In what types of applications is the NVD5490NLT4G MOSFET commonly used?
The MOSFET is commonly used in automotive systems, industrial power supplies, power tools, renewable energy systems, and general-purpose power switching and DC-DC converters.
