NVD5890NLT4G
  • Share:

onsemi NVD5890NLT4G

Manufacturer No:
NVD5890NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 24A/123A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5890NLT4G is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications requiring high current handling and low on-resistance. This device is part of onsemi's automotive-grade MOSFET series, complying with AEC-Q101 standards and PPAP capabilities. It is packaged in a DPAK (TO-252-3) case, which is lead-free, halogen-free, and RoHS compliant. The NVD5890NLT4G is known for its low RDS(on) to minimize conduction losses, making it an efficient choice for power management in various sectors.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 24A (Ta), 123A (Tc) A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V mOhm
Vgs(th) (Max) @ Id 2.5V @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V nC
Vgs (Max) ±20V V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V pF
Power Dissipation (Max) 4W (Ta), 107W (Tc) W
Operating Temperature -55°C ~ 175°C (TJ) °C
Mounting Type Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63

Key Features

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • High Current Handling: Supports continuous drain current of up to 123A at high temperatures.
  • Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for diverse environments.
  • Lead-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.

Applications

The NVD5890NLT4G is primarily used in automotive applications due to its AEC-Q101 qualification and high reliability. It is suitable for various power management systems, including:

  • Electric vehicles and hybrid electric vehicles.
  • Automotive powertrain and chassis systems.
  • High-power DC-DC converters.
  • Motor control and drive systems.
  • Other high-current, high-reliability applications.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the NVD5890NLT4G?

    A: The maximum drain-to-source voltage (Vdss) is 40 V.

  2. Q: What is the continuous drain current rating of the NVD5890NLT4G?

    A: The continuous drain current (Id) is 24A at ambient temperature (Ta) and 123A at case temperature (Tc).

  3. Q: What is the typical on-resistance (Rds On) of the NVD5890NLT4G?

    A: The maximum on-resistance (Rds On) is 3.7 mOhm at 50A and 10V Vgs.

  4. Q: What is the gate threshold voltage (Vgs(th)) of the NVD5890NLT4G?

    A: The maximum gate threshold voltage (Vgs(th)) is 2.5V at 250µA Id.

  5. Q: What is the operating temperature range of the NVD5890NLT4G?

    A: The operating temperature range is from -55°C to 175°C (TJ).

  6. Q: Is the NVD5890NLT4G RoHS compliant?

    A: Yes, the NVD5890NLT4G is lead-free, halogen-free, and RoHS compliant.

  7. Q: What package types are available for the NVD5890NLT4G?

    A: The NVD5890NLT4G is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packages.

  8. Q: What are the key applications of the NVD5890NLT4G?

    A: It is primarily used in automotive applications, including electric vehicles, powertrain and chassis systems, and high-power DC-DC converters.

  9. Q: Is the NVD5890NLT4G AEC-Q101 qualified?

    A: Yes, the NVD5890NLT4G is AEC-Q101 qualified and PPAP capable.

  10. Q: What is the maximum power dissipation of the NVD5890NLT4G?

    A: The maximum power dissipation is 4W at ambient temperature (Ta) and 107W at case temperature (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
406

Please send RFQ , we will respond immediately.

Same Series
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number NVD5890NLT4G NVD5890NT4G NVD5490NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 123A (Tc) 24A (Ta), 123A (Tc) 5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V 3.7mOhm @ 50A, 10V 64mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V 100 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V 4760 pF @ 25 V 365 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 107W (Tc) 4W (Ta), 107W (Tc) 3.4W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD