NVD5890NLT4G
  • Share:

onsemi NVD5890NLT4G

Manufacturer No:
NVD5890NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 24A/123A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5890NLT4G is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications requiring high current handling and low on-resistance. This device is part of onsemi's automotive-grade MOSFET series, complying with AEC-Q101 standards and PPAP capabilities. It is packaged in a DPAK (TO-252-3) case, which is lead-free, halogen-free, and RoHS compliant. The NVD5890NLT4G is known for its low RDS(on) to minimize conduction losses, making it an efficient choice for power management in various sectors.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 24A (Ta), 123A (Tc) A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V mOhm
Vgs(th) (Max) @ Id 2.5V @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V nC
Vgs (Max) ±20V V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V pF
Power Dissipation (Max) 4W (Ta), 107W (Tc) W
Operating Temperature -55°C ~ 175°C (TJ) °C
Mounting Type Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63

Key Features

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • High Current Handling: Supports continuous drain current of up to 123A at high temperatures.
  • Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for diverse environments.
  • Lead-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.

Applications

The NVD5890NLT4G is primarily used in automotive applications due to its AEC-Q101 qualification and high reliability. It is suitable for various power management systems, including:

  • Electric vehicles and hybrid electric vehicles.
  • Automotive powertrain and chassis systems.
  • High-power DC-DC converters.
  • Motor control and drive systems.
  • Other high-current, high-reliability applications.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the NVD5890NLT4G?

    A: The maximum drain-to-source voltage (Vdss) is 40 V.

  2. Q: What is the continuous drain current rating of the NVD5890NLT4G?

    A: The continuous drain current (Id) is 24A at ambient temperature (Ta) and 123A at case temperature (Tc).

  3. Q: What is the typical on-resistance (Rds On) of the NVD5890NLT4G?

    A: The maximum on-resistance (Rds On) is 3.7 mOhm at 50A and 10V Vgs.

  4. Q: What is the gate threshold voltage (Vgs(th)) of the NVD5890NLT4G?

    A: The maximum gate threshold voltage (Vgs(th)) is 2.5V at 250µA Id.

  5. Q: What is the operating temperature range of the NVD5890NLT4G?

    A: The operating temperature range is from -55°C to 175°C (TJ).

  6. Q: Is the NVD5890NLT4G RoHS compliant?

    A: Yes, the NVD5890NLT4G is lead-free, halogen-free, and RoHS compliant.

  7. Q: What package types are available for the NVD5890NLT4G?

    A: The NVD5890NLT4G is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packages.

  8. Q: What are the key applications of the NVD5890NLT4G?

    A: It is primarily used in automotive applications, including electric vehicles, powertrain and chassis systems, and high-power DC-DC converters.

  9. Q: Is the NVD5890NLT4G AEC-Q101 qualified?

    A: Yes, the NVD5890NLT4G is AEC-Q101 qualified and PPAP capable.

  10. Q: What is the maximum power dissipation of the NVD5890NLT4G?

    A: The maximum power dissipation is 4W at ambient temperature (Ta) and 107W at case temperature (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
406

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NVD5890NLT4G NVD5890NT4G NVD5490NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 123A (Tc) 24A (Ta), 123A (Tc) 5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V 3.7mOhm @ 50A, 10V 64mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V 100 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V 4760 pF @ 25 V 365 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 107W (Tc) 4W (Ta), 107W (Tc) 3.4W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD