NVD5890NLT4G
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onsemi NVD5890NLT4G

Manufacturer No:
NVD5890NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 24A/123A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5890NLT4G is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications requiring high current handling and low on-resistance. This device is part of onsemi's automotive-grade MOSFET series, complying with AEC-Q101 standards and PPAP capabilities. It is packaged in a DPAK (TO-252-3) case, which is lead-free, halogen-free, and RoHS compliant. The NVD5890NLT4G is known for its low RDS(on) to minimize conduction losses, making it an efficient choice for power management in various sectors.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 24A (Ta), 123A (Tc) A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V mOhm
Vgs(th) (Max) @ Id 2.5V @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V nC
Vgs (Max) ±20V V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V pF
Power Dissipation (Max) 4W (Ta), 107W (Tc) W
Operating Temperature -55°C ~ 175°C (TJ) °C
Mounting Type Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63

Key Features

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • High Current Handling: Supports continuous drain current of up to 123A at high temperatures.
  • Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for diverse environments.
  • Lead-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.

Applications

The NVD5890NLT4G is primarily used in automotive applications due to its AEC-Q101 qualification and high reliability. It is suitable for various power management systems, including:

  • Electric vehicles and hybrid electric vehicles.
  • Automotive powertrain and chassis systems.
  • High-power DC-DC converters.
  • Motor control and drive systems.
  • Other high-current, high-reliability applications.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the NVD5890NLT4G?

    A: The maximum drain-to-source voltage (Vdss) is 40 V.

  2. Q: What is the continuous drain current rating of the NVD5890NLT4G?

    A: The continuous drain current (Id) is 24A at ambient temperature (Ta) and 123A at case temperature (Tc).

  3. Q: What is the typical on-resistance (Rds On) of the NVD5890NLT4G?

    A: The maximum on-resistance (Rds On) is 3.7 mOhm at 50A and 10V Vgs.

  4. Q: What is the gate threshold voltage (Vgs(th)) of the NVD5890NLT4G?

    A: The maximum gate threshold voltage (Vgs(th)) is 2.5V at 250µA Id.

  5. Q: What is the operating temperature range of the NVD5890NLT4G?

    A: The operating temperature range is from -55°C to 175°C (TJ).

  6. Q: Is the NVD5890NLT4G RoHS compliant?

    A: Yes, the NVD5890NLT4G is lead-free, halogen-free, and RoHS compliant.

  7. Q: What package types are available for the NVD5890NLT4G?

    A: The NVD5890NLT4G is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packages.

  8. Q: What are the key applications of the NVD5890NLT4G?

    A: It is primarily used in automotive applications, including electric vehicles, powertrain and chassis systems, and high-power DC-DC converters.

  9. Q: Is the NVD5890NLT4G AEC-Q101 qualified?

    A: Yes, the NVD5890NLT4G is AEC-Q101 qualified and PPAP capable.

  10. Q: What is the maximum power dissipation of the NVD5890NLT4G?

    A: The maximum power dissipation is 4W at ambient temperature (Ta) and 107W at case temperature (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5890NLT4G NVD5890NT4G NVD5490NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 123A (Tc) 24A (Ta), 123A (Tc) 5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V 3.7mOhm @ 50A, 10V 64mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V 100 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V 4760 pF @ 25 V 365 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 107W (Tc) 4W (Ta), 107W (Tc) 3.4W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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