NVD5890NLT4G
  • Share:

onsemi NVD5890NLT4G

Manufacturer No:
NVD5890NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 24A/123A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5890NLT4G is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications requiring high current handling and low on-resistance. This device is part of onsemi's automotive-grade MOSFET series, complying with AEC-Q101 standards and PPAP capabilities. It is packaged in a DPAK (TO-252-3) case, which is lead-free, halogen-free, and RoHS compliant. The NVD5890NLT4G is known for its low RDS(on) to minimize conduction losses, making it an efficient choice for power management in various sectors.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 24A (Ta), 123A (Tc) A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V mOhm
Vgs(th) (Max) @ Id 2.5V @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V nC
Vgs (Max) ±20V V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V pF
Power Dissipation (Max) 4W (Ta), 107W (Tc) W
Operating Temperature -55°C ~ 175°C (TJ) °C
Mounting Type Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63

Key Features

  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • High Current Handling: Supports continuous drain current of up to 123A at high temperatures.
  • Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for diverse environments.
  • Lead-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.

Applications

The NVD5890NLT4G is primarily used in automotive applications due to its AEC-Q101 qualification and high reliability. It is suitable for various power management systems, including:

  • Electric vehicles and hybrid electric vehicles.
  • Automotive powertrain and chassis systems.
  • High-power DC-DC converters.
  • Motor control and drive systems.
  • Other high-current, high-reliability applications.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the NVD5890NLT4G?

    A: The maximum drain-to-source voltage (Vdss) is 40 V.

  2. Q: What is the continuous drain current rating of the NVD5890NLT4G?

    A: The continuous drain current (Id) is 24A at ambient temperature (Ta) and 123A at case temperature (Tc).

  3. Q: What is the typical on-resistance (Rds On) of the NVD5890NLT4G?

    A: The maximum on-resistance (Rds On) is 3.7 mOhm at 50A and 10V Vgs.

  4. Q: What is the gate threshold voltage (Vgs(th)) of the NVD5890NLT4G?

    A: The maximum gate threshold voltage (Vgs(th)) is 2.5V at 250µA Id.

  5. Q: What is the operating temperature range of the NVD5890NLT4G?

    A: The operating temperature range is from -55°C to 175°C (TJ).

  6. Q: Is the NVD5890NLT4G RoHS compliant?

    A: Yes, the NVD5890NLT4G is lead-free, halogen-free, and RoHS compliant.

  7. Q: What package types are available for the NVD5890NLT4G?

    A: The NVD5890NLT4G is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packages.

  8. Q: What are the key applications of the NVD5890NLT4G?

    A: It is primarily used in automotive applications, including electric vehicles, powertrain and chassis systems, and high-power DC-DC converters.

  9. Q: Is the NVD5890NLT4G AEC-Q101 qualified?

    A: Yes, the NVD5890NLT4G is AEC-Q101 qualified and PPAP capable.

  10. Q: What is the maximum power dissipation of the NVD5890NLT4G?

    A: The maximum power dissipation is 4W at ambient temperature (Ta) and 107W at case temperature (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
406

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP

Similar Products

Part Number NVD5890NLT4G NVD5890NT4G NVD5490NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 123A (Tc) 24A (Ta), 123A (Tc) 5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V 3.7mOhm @ 50A, 10V 64mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V 100 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V 4760 pF @ 25 V 365 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 107W (Tc) 4W (Ta), 107W (Tc) 3.4W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB