Overview
The STP3NK80Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is part of the SuperMESH series, which is an optimization of the well-established PowerMESH layout. It is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. The STP3NK80Z is available in a TO-220 package and is Zener-protected, ensuring robust performance and reliability.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage | 800 | V |
| VGS | Gate-source voltage | ±30 | V |
| ID | Drain current (continuous) at TC = 25 °C | 2.5 | A |
| ID | Drain current (continuous) at TC = 100 °C | 1.57 | A |
| IDM | Drain current (pulsed) | 10 | A |
| PTOT | Total power dissipation at TC = 25 °C | 70 | W |
| RDS(on) | Static drain-source on-resistance | 3.6 (typ.), 4.5 (max.) | Ω |
| RthJC | Thermal resistance, junction-to-case | 1.78 | °C/W |
| RthJA | Thermal resistance, junction-to-ambient | 62.5 | °C/W |
| TJ | Operating junction temperature range | -55 to 150 | °C |
Key Features
- Extremely high dv/dt capability, ensuring robust performance in demanding applications.
- 100% avalanche tested for reliability and durability.
- Gate charge minimized, reducing switching losses and improving efficiency.
- Very low intrinsic capacitances, enhancing high-frequency performance.
- Zener-protected, providing additional safety and reliability.
- Very good manufacturing repeatability, ensuring consistent performance across devices.
Applications
The STP3NK80Z is primarily used in switching applications where high voltage and current handling are required. These include:
- Power supplies and converters.
- Motor control and drive systems.
- High-voltage industrial and automotive applications.
- Other high-power electronic systems requiring reliable and efficient switching.
Q & A
- What is the maximum drain-source voltage of the STP3NK80Z?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance of the STP3NK80Z?
The typical static drain-source on-resistance (RDS(on)) is 3.6 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 2.5 A.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RthJC) is 1.78 °C/W.
- What is the operating junction temperature range?
The operating junction temperature range (TJ) is -55 to 150 °C.
- Is the STP3NK80Z Zener-protected?
- What is the maximum gate-source voltage?
The maximum gate-source voltage (VGS) is ±30 V.
- What is the peak diode recovery voltage slope?
The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.
- What are the typical applications of the STP3NK80Z?
The STP3NK80Z is used in switching applications, including power supplies, motor control systems, and high-voltage industrial and automotive applications.
- What technology is used in the STP3NK80Z?
The STP3NK80Z is developed using the SuperMESH technology by STMicroelectronics.
