STP40NF03L
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STMicroelectronics STP40NF03L

Manufacturer No:
STP40NF03L
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 30V 40A TO220AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STP40NF03L is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique 'single feature size' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP40NF03L is designed for high-current switching applications and is available in TO-220 and TO-220FP packages.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) at TC = 25 °C 40 A
Continuous Drain Current (ID) at TC = 100 °C 28 A
Pulsed Drain Current (IDM) 160 A
Total Dissipation at TC = 25 °C 70 W
Thermal Resistance Junction-Case (Rthj-c) 1.8 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Static Drain-Source On Resistance (RDS(on)) 0.022 Ω
Gate Threshold Voltage (VGS(th)) 1 to 2.5 V

Key Features

  • Low on-resistance (RDS(on) = 0.022 Ω) for high efficiency.
  • High current capability (ID = 40 A) suitable for demanding applications.
  • Rugged avalanche characteristics for enhanced reliability.
  • Low threshold voltage (VGS(th) = 1 to 2.5 V) for easy gate drive.
  • High packing density due to the 'single feature size' strip-based process.
  • Available in TO-220 and TO-220FP packages for various mounting options.
  • ECOPACK® compliant for environmental sustainability.

Applications

  • Switching applications such as power supplies, motor drives, and DC-DC converters.
  • High-power electronic devices requiring low on-resistance and high current handling.
  • Automotive and industrial control systems where reliability and efficiency are critical.
  • Power management in consumer electronics and telecommunications equipment.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP40NF03L?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the continuous drain current (ID) at 25 °C for the STP40NF03L?

    The continuous drain current (ID) at 25 °C is 40 A.

  3. What is the thermal resistance junction-case (Rthj-c) for the TO-220 package?

    The thermal resistance junction-case (Rthj-c) for the TO-220 package is 1.8 °C/W.

  4. What is the gate threshold voltage (VGS(th)) range for the STP40NF03L?

    The gate threshold voltage (VGS(th)) range is from 1 to 2.5 V.

  5. In which packages is the STP40NF03L available?

    The STP40NF03L is available in TO-220 and TO-220FP packages.

  6. What is the maximum operating junction temperature (Tj) for the STP40NF03L?

    The maximum operating junction temperature (Tj) is 175 °C.

  7. What is the typical on-resistance (RDS(on)) of the STP40NF03L?

    The typical on-resistance (RDS(on)) is 0.022 Ω.

  8. Is the STP40NF03L ECOPACK compliant?

    Yes, the STP40NF03L is ECOPACK compliant for environmental sustainability.

  9. What are some common applications for the STP40NF03L?

    Common applications include switching power supplies, motor drives, DC-DC converters, and high-power electronic devices.

  10. What is the maximum pulse drain current (IDM) for the STP40NF03L?

    The maximum pulse drain current (IDM) is 160 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STF40NF03L
STF40NF03L
MOSFET N-CH 30V 23A TO220FP

Similar Products

Part Number STP40NF03L STP60NF03L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 20A, 10V 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 58 nC @ 5 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 25 V 2550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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