NTLJF4156NT1G
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onsemi NTLJF4156NT1G

Manufacturer No:
NTLJF4156NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 2.5A 6WDFN
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Introduction

Overview

The NTLJF4156NT1G is a power MOSFET produced by onsemi, designed with a co-packaged Schottky diode. This N-Channel MOSFET is housed in a WDFN6 package, which features an exposed drain pad for excellent thermal conduction. The device is lead-free and has a low profile, making it suitable for thin environments. It is optimized for low on-resistance and high efficiency, particularly at low gate-source voltages.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±8.0V
Continuous Drain Current (TJ = 25°C)ID3.7A
Continuous Drain Current (TJ = 85°C)ID2.7A
Pulsed Drain CurrentIDM20A
Power Dissipation (TJ = 25°C)PD1.5W
Operating Junction and Storage TemperatureTJ, TSTG−55 to 150°C
Source Current (Body Diode)IS2.4A
Lead Temperature for Soldering PurposesTL260°C
Gate Threshold VoltageVGS(TH)0.4 - 1.0V
Drain-to-Source On-Resistance (VGS = 1.5 V, ID = 1.5 A)RDS(on)133 - 250

Key Features

  • WDFN6 package with exposed drain pad for excellent thermal conduction.
  • Co-packaged MOSFET and Schottky diode for easy circuit layout.
  • Low on-resistance at low VGS levels (VGS = 1.5 V).
  • Low profile (< 0.8 mm) for easy fit in thin environments.
  • Low VF Schottky diode.
  • Pb-free device.

Applications

  • DC-DC converters.
  • Lithium-ion battery applications in cell phones, PDAs, media players.
  • Color display and camera flash regulators.

Q & A

  1. What is the maximum drain-to-source voltage of the NTLJF4156NT1G? The maximum drain-to-source voltage is 30 V.
  2. What is the continuous drain current at 25°C and 85°C? The continuous drain current is 3.7 A at 25°C and 2.7 A at 85°C.
  3. What is the pulsed drain current rating? The pulsed drain current is rated at 20 A.
  4. What is the operating junction and storage temperature range? The operating junction and storage temperature range is −55 to 150°C.
  5. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
  6. What are the key features of the WDFN6 package? The WDFN6 package features an exposed drain pad for excellent thermal conduction and a low profile.
  7. What are the typical applications of the NTLJF4156NT1G? Typical applications include DC-DC converters, lithium-ion battery applications, and color display and camera flash regulators.
  8. Is the NTLJF4156NT1G a Pb-free device? Yes, the NTLJF4156NT1G is a Pb-free device.
  9. What is the gate threshold voltage range? The gate threshold voltage range is 0.4 to 1.0 V.
  10. What is the drain-to-source on-resistance at VGS = 1.5 V and ID = 1.5 A? The drain-to-source on-resistance is 133 to 250 mΩ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:427 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):710mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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Same Series
NTLJF4156NTAG
NTLJF4156NTAG
MOSFET N-CH 30V 2.5A 6WDFN

Similar Products

Part Number NTLJF4156NT1G NTLJF4156NTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tj) 2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 4.5V 70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 4.5 V 6.5 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 427 pF @ 15 V 427 pF @ 15 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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