PMZB290UNE,315
  • Share:

NXP USA Inc. PMZB290UNE,315

Manufacturer No:
PMZB290UNE,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 20V 1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UNE,315 is a 20 V, single N-channel Trench MOSFET produced by Nexperia. This component is part of Nexperia's extensive portfolio of MOSFETs, which are known for their high performance and reliability. The PMZB290UNE,315 is housed in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This device is designed for fast switching and offers low threshold voltage, making it suitable for various high-speed applications.

Key Specifications

ParameterValue
Type numberPMZB290UN
PackageDFN1006B-3 (SOT883B)
Channel typeN-channel
VDS [max]20 V
VGS [max]8 V
RDSon [max] @ VGS = 4.5 V; @25°C350 mΩ
RDSon [max] @ VGS = 2.5 V450 mΩ
Tj [max]150°C
ID [max]1 A
QGD [typ]0.18 nC
QG(tot) [typ] @ VGS = 4.5 V0.89 nC
Ptot [max]0.7 W
VGSth [typ]0.7 V
Ciss [typ]45 pF
Coss [typ]11 pF

Key Features

  • Fast switching
  • Trench MOSFET technology
  • Low threshold voltage
  • Ultra thin package profile with 0.37 mm height
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMZB290UNE,315? The maximum drain-source voltage is 20 V.
  2. What is the maximum gate-source voltage (VGS) of the PMZB290UNE,315? The maximum gate-source voltage is 8 V.
  3. What is the typical threshold voltage (VGSth) of the PMZB290UNE,315? The typical threshold voltage is 0.7 V.
  4. What is the maximum continuous drain current (ID) of the PMZB290UNE,315? The maximum continuous drain current is 1 A.
  5. What is the package type of the PMZB290UNE,315? The package type is DFN1006B-3 (SOT883B).
  6. Does the PMZB290UNE,315 have ESD protection? Yes, it has ESD protection up to 2 kV HBM.
  7. What are some common applications of the PMZB290UNE,315? Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  8. What is the maximum junction temperature (Tj) of the PMZB290UNE,315? The maximum junction temperature is 150°C.
  9. What is the typical gate charge (QG(tot)) at VGS = 4.5 V? The typical gate charge is 0.89 nC.
  10. Is the PMZB290UNE,315 automotive qualified? No, it is not automotive qualified.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:SC-101, SOT-883
0 Remaining View Similar

In Stock

$0.04
5,666

Please send RFQ , we will respond immediately.

Same Series
PMZB290UN,315
PMZB290UN,315
MOSFET N-CH 20V 1A DFN1006B-3

Similar Products

Part Number PMZB290UNE,315 PMZB290UN,315
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 10 V 83 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
LS1027AXE7PQA
LS1027AXE7PQA
NXP USA Inc.
LS1027A-1500 XT SEC
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
74AHCT1G04GW-Q100125
74AHCT1G04GW-Q100125
NXP USA Inc.
INVERTER, AHCT/VHCT/VT SERIES
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN