PMZB290UNE,315
  • Share:

NXP USA Inc. PMZB290UNE,315

Manufacturer No:
PMZB290UNE,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 20V 1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UNE,315 is a 20 V, single N-channel Trench MOSFET produced by Nexperia. This component is part of Nexperia's extensive portfolio of MOSFETs, which are known for their high performance and reliability. The PMZB290UNE,315 is housed in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This device is designed for fast switching and offers low threshold voltage, making it suitable for various high-speed applications.

Key Specifications

ParameterValue
Type numberPMZB290UN
PackageDFN1006B-3 (SOT883B)
Channel typeN-channel
VDS [max]20 V
VGS [max]8 V
RDSon [max] @ VGS = 4.5 V; @25°C350 mΩ
RDSon [max] @ VGS = 2.5 V450 mΩ
Tj [max]150°C
ID [max]1 A
QGD [typ]0.18 nC
QG(tot) [typ] @ VGS = 4.5 V0.89 nC
Ptot [max]0.7 W
VGSth [typ]0.7 V
Ciss [typ]45 pF
Coss [typ]11 pF

Key Features

  • Fast switching
  • Trench MOSFET technology
  • Low threshold voltage
  • Ultra thin package profile with 0.37 mm height
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMZB290UNE,315? The maximum drain-source voltage is 20 V.
  2. What is the maximum gate-source voltage (VGS) of the PMZB290UNE,315? The maximum gate-source voltage is 8 V.
  3. What is the typical threshold voltage (VGSth) of the PMZB290UNE,315? The typical threshold voltage is 0.7 V.
  4. What is the maximum continuous drain current (ID) of the PMZB290UNE,315? The maximum continuous drain current is 1 A.
  5. What is the package type of the PMZB290UNE,315? The package type is DFN1006B-3 (SOT883B).
  6. Does the PMZB290UNE,315 have ESD protection? Yes, it has ESD protection up to 2 kV HBM.
  7. What are some common applications of the PMZB290UNE,315? Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  8. What is the maximum junction temperature (Tj) of the PMZB290UNE,315? The maximum junction temperature is 150°C.
  9. What is the typical gate charge (QG(tot)) at VGS = 4.5 V? The typical gate charge is 0.89 nC.
  10. Is the PMZB290UNE,315 automotive qualified? No, it is not automotive qualified.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:SC-101, SOT-883
0 Remaining View Similar

In Stock

$0.04
5,666

Please send RFQ , we will respond immediately.

Same Series
PMZB290UN,315
PMZB290UN,315
MOSFET N-CH 20V 1A DFN1006B-3

Similar Products

Part Number PMZB290UNE,315 PMZB290UN,315
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 10 V 83 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
SC18IS600IPW/S8HP
SC18IS600IPW/S8HP
NXP USA Inc.
IC I2C CONTROLLER SPI 16TSSOP
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO