Overview
The STD36P4LLF6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which significantly enhances its performance. It is packaged in a DPAK (TO-252) type A2 package, making it suitable for a variety of high-power applications. The MOSFET is known for its very low on-resistance, low gate charge, and high avalanche ruggedness, which contribute to its efficiency and reliability in power management systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 36 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 26 | A |
| Pulsed Drain Current (IDM) | 144 | A |
| Total Dissipation at Tc = 25 °C (PTOT) | 60 | W |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 18 A | 0.0175 - 0.0205 | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Total Gate Charge (Qg) | 22 | nC |
Key Features
- Very Low On-Resistance: The STD36P4LLF6 features a very low RDS(on) of 0.0175 Ω to 0.0205 Ω, making it highly efficient in power switching applications.
- Low Gate Charge: With a total gate charge of 22 nC, this MOSFET minimizes gate drive power loss.
- High Avalanche Ruggedness: The device is designed to withstand high avalanche conditions, enhancing its reliability in demanding applications.
- Advanced Trench Gate Structure: The STripFET™ F6 technology ensures superior performance and reduced losses.
- ECOPACK® Compliance: Available in environmentally compliant ECOPACK® packages, meeting various environmental standards.
Applications
The STD36P4LLF6 is suitable for a wide range of high-power switching applications, including:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Automotive systems requiring high power and efficiency
- Industrial power management systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STD36P4LLF6?
The maximum drain-source voltage (VDS) is 40 V.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 36 A.
- What is the typical on-resistance (RDS(on)) of the STD36P4LLF6?
The typical on-resistance (RDS(on)) is 0.0175 Ω at VGS = 10 V and ID = 18 A.
- What is the maximum junction temperature (Tj) of the device?
The maximum junction temperature (Tj) is 175 °C.
- What technology is used in the STD36P4LLF6?
The device is developed using the STripFET™ F6 technology.
- What is the total gate charge (Qg) of the STD36P4LLF6?
The total gate charge (Qg) is 22 nC.
- What type of package is the STD36P4LLF6 available in?
The device is packaged in a DPAK (TO-252) type A2 package.
- What are some common applications of the STD36P4LLF6?
Common applications include power supplies, DC-DC converters, motor control systems, and automotive systems.
- Is the STD36P4LLF6 environmentally compliant?
Yes, it is available in ECOPACK® packages, which meet various environmental standards.
- What is the maximum pulsed drain current (IDM) of the device?
The maximum pulsed drain current (IDM) is 144 A.
