Overview
The FDMC4435BZ-F127-L701 is a P-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance, making it highly suitable for power management and load switching applications, particularly in notebook computers and portable battery packs.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | −30 | V |
| Gate to Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) | −18 | A |
| Pulsed Drain Current (ID) | −50 | A |
| Single Pulse Avalanche Energy (EAS) | 32 | mJ |
| Power Dissipation (PD) | 31 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | −55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 4 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 | °C/W |
| Static Drain to Source On Resistance (rDS(on)) at VGS = −10 V, ID = −8.5 A | 14 - 20 | mΩ |
| Static Drain to Source On Resistance (rDS(on)) at VGS = −4.5 V, ID = −6.3 A | 21 - 37 | mΩ |
Key Features
- High Performance Trench Technology for extremely low rDS(on)
- Extended VGSS Range (−25 V) for battery applications
- High power and current handling capability
- HBM ESD Protection Level > 7 kV typical
- 100% UIL tested
- Pb-free and RoHS compliant
Applications
- High side in DC-DC buck converters
- Notebook battery power management
- Load switch in notebooks
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC4435BZ-F127-L701? The maximum drain to source voltage is −30 V.
- What is the maximum continuous drain current (ID) of this MOSFET? The maximum continuous drain current is −18 A.
- What is the typical ESD protection level of this device? The HBM ESD protection level is > 7 kV typical.
- Is the FDMC4435BZ-F127-L701 Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What are the typical applications of the FDMC4435BZ-F127-L701? Typical applications include high side in DC-DC buck converters, notebook battery power management, and load switches in notebooks.
- What is the thermal resistance, junction to case (RθJC), of this MOSFET? The thermal resistance, junction to case, is 4 °C/W.
- What is the static drain to source on resistance (rDS(on)) at VGS = −10 V and ID = −8.5 A? The static drain to source on resistance is 14 - 20 mΩ.
- What is the package type of the FDMC4435BZ-F127-L701? The package type is WDFN8 3.3x3.3, 0.65P.
- What is the operating and storage junction temperature range of this device? The operating and storage junction temperature range is −55 to +150 °C.
- Is there any specific marking on the device for Pb-free and RoHS compliance? Yes, the device may have a Pb-free indicator, such as “G” or a microdot “•”, though this may not always be present.
