IRFP4668PBF
  • Share:

Infineon Technologies IRFP4668PBF

Manufacturer No:
IRFP4668PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 130A TO247AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFP4668PBF is a high-performance, single N-Channel StrongIRFET™ power MOSFET manufactured by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low on-resistance (RDS(on)) and high current capability, making it ideal for various low-frequency applications that require both performance and ruggedness.

The IRFP4668PBF is housed in a TO-247AC package and is widely used in applications such as high-efficiency synchronous rectification in Switch-Mode Power Supplies (SMPS), uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits.

Key Specifications

Parameter Value Units
Drain-to-Source Voltage (Vdss) 200 V
Drain-Source On Resistance (RDS(on)) 8.0 mΩ (typ), 9.7 mΩ (max)
Continuous Drain Current (ID) at TC = 25°C 130 A
Continuous Drain Current (ID) at TC = 100°C 92 A
Pulsed Drain Current (IDM) 520 A
Maximum Power Dissipation (PD) 520 W
Gate-to-Source Voltage (VGS) ±30 V
Gate-Source Threshold Voltage (VGS(th)) 5 V
Total Gate Charge (Qg) 161 nC nC
Turn-on Delay Time 41 ns ns
Turn-off Delay Time 64 ns ns
Rise Time 105 ns ns
Fall Time 74 ns ns
Operating Junction Temperature Range -55 to +175 °C
Package Style TO-247AC
Mounting Method Through Hole

Key Features

  • Low On-Resistance (RDS(on)): Typical 8.0 mΩ and maximum 9.7 mΩ, ensuring high efficiency in power switching applications.
  • High Current Capability: Continuous drain current of 130 A at TC = 25°C and 92 A at TC = 100°C.
  • Improved Ruggedness: Enhanced gate, avalanche, and dynamic dV/dt ruggedness.
  • Fully Characterized Capacitance and Avalanche SOA: Ensures reliable operation under various conditions.
  • Enhanced Body Diode dV/dt and dI/dt Capability: Suitable for high-speed power switching and hard-switched circuits.
  • Industry Standard Package: TO-247AC package allows for easy integration and drop-in replacement.
  • Wide Availability: Broad availability from distribution partners.
  • Product Qualification: Qualified according to JEDEC standards, ensuring high reliability and performance.

Applications

  • High Efficiency Synchronous Rectification in SMPS: Ideal for switch-mode power supplies requiring high efficiency and reliability.
  • Uninterruptible Power Supply (UPS): Used in UPS systems to ensure continuous power supply during outages.
  • High Speed Power Switching: Suitable for applications requiring fast switching times and high current handling.
  • Hard Switched and High Frequency Circuits: Used in circuits that require robust performance under high-frequency and hard-switching conditions.
  • DC Motors and Battery Management Systems: Applicable in DC motor drives and battery management systems due to its high current and low RDS(on) characteristics.
  • Inverters and DC-DC Converters: Ideal for use in inverter and DC-DC converter applications where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRFP4668PBF?

    The maximum drain-to-source voltage (Vdss) is 200 V.

  2. What is the typical on-resistance (RDS(on)) of the IRFP4668PBF?

    The typical on-resistance (RDS(on)) is 8.0 mΩ, with a maximum of 9.7 mΩ.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 130 A.

  4. What is the maximum gate-to-source voltage (VGS)?

    The maximum gate-to-source voltage (VGS) is ±30 V.

  5. What is the total gate charge (Qg) of the IRFP4668PBF?

    The total gate charge (Qg) is 161 nC.

  6. What are the typical turn-on and turn-off delay times?

    The typical turn-on delay time is 41 ns, and the typical turn-off delay time is 64 ns.

  7. What is the operating junction temperature range of the IRFP4668PBF?

    The operating junction temperature range is -55 to +175 °C.

  8. In what package is the IRFP4668PBF available?

    The IRFP4668PBF is available in a TO-247AC package.

  9. What are some common applications of the IRFP4668PBF?

    Common applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits.

  10. Is the IRFP4668PBF qualified according to any industry standards?

    Yes, the IRFP4668PBF is qualified according to JEDEC standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:241 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10720 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$10.27
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFP4668PBF IRFP4868PBF IRFP4768PBF IRFP4368PBF IRFP4468PBF IRFP4568PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 300 V 250 V 75 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 70A (Tc) 93A (Tc) 195A (Tc) 195A (Tc) 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 81A, 10V 32mOhm @ 42A, 10V 17.5mOhm @ 56A, 10V 1.85mOhm @ 195A, 10V 2.6mOhm @ 180A, 10V 5.9mOhm @ 103A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 241 nC @ 10 V 270 nC @ 10 V 270 nC @ 10 V 570 nC @ 10 V 540 nC @ 10 V 227 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10720 pF @ 50 V 10774 pF @ 50 V 10880 pF @ 50 V 19230 pF @ 50 V 19860 pF @ 50 V 10470 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 520W (Tc) 517W (Tc) 520W (Tc) 520W (Tc) 520W (Tc) 517W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC847CB5000
BC847CB5000
Infineon Technologies
BIPOLAR TRANSISTOR TRANSISTOR
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BCX52E6327HTSA1
BCX52E6327HTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I