Overview
The BC850CWE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It belongs to the BC850 series, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for various audio frequency (AF) and driver applications. This transistor is packaged in a surface-mount SOT323 format, enhancing its suitability for modern electronic designs where space is a critical factor.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-emitter voltage | VCEO | 45 | V |
Collector-base voltage | VCBO | 50 | V |
Emitter-base voltage | VEBO | 6 | V |
Collector current | IC | 100 | mA |
Peak collector current (tp ≤ 10 ms) | ICM | 200 | mA |
Total power dissipation (TS ≤ 71 °C) | Ptot | 250 | mW |
Junction temperature | Tj | 150 | °C |
Transition frequency (fT) at IC = 10 mA, VCE = 5 V | fT | 250 | MHz |
Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | 0.95 | pF |
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz) | Ceb | 9 | pF |
Key Features
- High current gain, making it suitable for AF input stages and driver applications.
- Low collector-emitter saturation voltage, enhancing efficiency in switching and amplification tasks.
- Surface-mount SOT323 package, ideal for compact and modern electronic designs.
- High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
- Low thermal resistance, ensuring reliable operation over a range of temperatures.
Applications
The BC850CWE6327 is versatile and can be used in various applications, including:
- AUDIO FREQUENCY (AF) INPUT STAGES: Due to its high current gain and low noise characteristics, it is ideal for audio amplifiers and pre-amplifiers.
- DRIVER APPLICATIONS: It can be used to drive small loads such as LEDs, relays, and other small electronic devices.
- SWITCHING CIRCUITS: The low collector-emitter saturation voltage makes it efficient in switching applications.
- GENERAL PURPOSE AMPLIFICATION: Suitable for a wide range of amplification tasks in electronic circuits.
Q & A
- What is the collector-emitter voltage rating of the BC850CWE6327?
The collector-emitter voltage rating is 45 V. - What is the maximum collector current for the BC850CWE6327?
The maximum collector current is 100 mA. - What is the transition frequency (fT) of the BC850CWE6327?
The transition frequency is 250 MHz at IC = 10 mA and VCE = 5 V. - What is the package type of the BC850CWE6327?
The package type is surface-mount SOT323. - What are the typical applications of the BC850CWE6327?
Typical applications include AF input stages, driver applications, switching circuits, and general-purpose amplification. - What is the junction temperature limit for the BC850CWE6327?
The junction temperature limit is 150 °C. - What is the total power dissipation limit for the BC850CWE6327 at TS ≤ 71 °C?
The total power dissipation limit is 250 mW. - What are the emitter-base and collector-base capacitances of the BC850CWE6327?
The emitter-base capacitance is 9 pF, and the collector-base capacitance is 0.95 pF. - Is the BC850CWE6327 suitable for high-frequency applications?
Yes, due to its high transition frequency of 250 MHz. - What is the peak collector current rating for short pulses (tp ≤ 10 ms)?
The peak collector current rating is 200 mA.