BC850CWE6327
  • Share:

Infineon Technologies BC850CWE6327

Manufacturer No:
BC850CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CWE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It belongs to the BC850 series, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for various audio frequency (AF) and driver applications. This transistor is packaged in a surface-mount SOT323 format, enhancing its suitability for modern electronic designs where space is a critical factor.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO45V
Collector-base voltageVCBO50V
Emitter-base voltageVEBO6V
Collector currentIC100mA
Peak collector current (tp ≤ 10 ms)ICM200mA
Total power dissipation (TS ≤ 71 °C)Ptot250mW
Junction temperatureTj150°C
Transition frequency (fT) at IC = 10 mA, VCE = 5 VfT250MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb0.95pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz)Ceb9pF

Key Features

  • High current gain, making it suitable for AF input stages and driver applications.
  • Low collector-emitter saturation voltage, enhancing efficiency in switching and amplification tasks.
  • Surface-mount SOT323 package, ideal for compact and modern electronic designs.
  • High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
  • Low thermal resistance, ensuring reliable operation over a range of temperatures.

Applications

The BC850CWE6327 is versatile and can be used in various applications, including:

  • AUDIO FREQUENCY (AF) INPUT STAGES: Due to its high current gain and low noise characteristics, it is ideal for audio amplifiers and pre-amplifiers.
  • DRIVER APPLICATIONS: It can be used to drive small loads such as LEDs, relays, and other small electronic devices.
  • SWITCHING CIRCUITS: The low collector-emitter saturation voltage makes it efficient in switching applications.
  • GENERAL PURPOSE AMPLIFICATION: Suitable for a wide range of amplification tasks in electronic circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC850CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum collector current for the BC850CWE6327?
    The maximum collector current is 100 mA.
  3. What is the transition frequency (fT) of the BC850CWE6327?
    The transition frequency is 250 MHz at IC = 10 mA and VCE = 5 V.
  4. What is the package type of the BC850CWE6327?
    The package type is surface-mount SOT323.
  5. What are the typical applications of the BC850CWE6327?
    Typical applications include AF input stages, driver applications, switching circuits, and general-purpose amplification.
  6. What is the junction temperature limit for the BC850CWE6327?
    The junction temperature limit is 150 °C.
  7. What is the total power dissipation limit for the BC850CWE6327 at TS ≤ 71 °C?
    The total power dissipation limit is 250 mW.
  8. What are the emitter-base and collector-base capacitances of the BC850CWE6327?
    The emitter-base capacitance is 9 pF, and the collector-base capacitance is 0.95 pF.
  9. Is the BC850CWE6327 suitable for high-frequency applications?
    Yes, due to its high transition frequency of 250 MHz.
  10. What is the peak collector current rating for short pulses (tp ≤ 10 ms)?
    The peak collector current rating is 200 mA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC850CWE6327 BC850BWE6327 BC850CE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323-3 PG-SOT323-3 PG-SOT23

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB

Related Product By Brand

BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC 807-16 E6327
BC 807-16 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I