BC850CWE6327
  • Share:

Infineon Technologies BC850CWE6327

Manufacturer No:
BC850CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CWE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It belongs to the BC850 series, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for various audio frequency (AF) and driver applications. This transistor is packaged in a surface-mount SOT323 format, enhancing its suitability for modern electronic designs where space is a critical factor.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO45V
Collector-base voltageVCBO50V
Emitter-base voltageVEBO6V
Collector currentIC100mA
Peak collector current (tp ≤ 10 ms)ICM200mA
Total power dissipation (TS ≤ 71 °C)Ptot250mW
Junction temperatureTj150°C
Transition frequency (fT) at IC = 10 mA, VCE = 5 VfT250MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb0.95pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz)Ceb9pF

Key Features

  • High current gain, making it suitable for AF input stages and driver applications.
  • Low collector-emitter saturation voltage, enhancing efficiency in switching and amplification tasks.
  • Surface-mount SOT323 package, ideal for compact and modern electronic designs.
  • High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
  • Low thermal resistance, ensuring reliable operation over a range of temperatures.

Applications

The BC850CWE6327 is versatile and can be used in various applications, including:

  • AUDIO FREQUENCY (AF) INPUT STAGES: Due to its high current gain and low noise characteristics, it is ideal for audio amplifiers and pre-amplifiers.
  • DRIVER APPLICATIONS: It can be used to drive small loads such as LEDs, relays, and other small electronic devices.
  • SWITCHING CIRCUITS: The low collector-emitter saturation voltage makes it efficient in switching applications.
  • GENERAL PURPOSE AMPLIFICATION: Suitable for a wide range of amplification tasks in electronic circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC850CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum collector current for the BC850CWE6327?
    The maximum collector current is 100 mA.
  3. What is the transition frequency (fT) of the BC850CWE6327?
    The transition frequency is 250 MHz at IC = 10 mA and VCE = 5 V.
  4. What is the package type of the BC850CWE6327?
    The package type is surface-mount SOT323.
  5. What are the typical applications of the BC850CWE6327?
    Typical applications include AF input stages, driver applications, switching circuits, and general-purpose amplification.
  6. What is the junction temperature limit for the BC850CWE6327?
    The junction temperature limit is 150 °C.
  7. What is the total power dissipation limit for the BC850CWE6327 at TS ≤ 71 °C?
    The total power dissipation limit is 250 mW.
  8. What are the emitter-base and collector-base capacitances of the BC850CWE6327?
    The emitter-base capacitance is 9 pF, and the collector-base capacitance is 0.95 pF.
  9. Is the BC850CWE6327 suitable for high-frequency applications?
    Yes, due to its high transition frequency of 250 MHz.
  10. What is the peak collector current rating for short pulses (tp ≤ 10 ms)?
    The peak collector current rating is 200 mA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP

Similar Products

Part Number BC850CWE6327 BC850BWE6327 BC850CE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323-3 PG-SOT323-3 PG-SOT23

Related Product By Categories

TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB

Related Product By Brand

BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
IRF1404PBF
IRF1404PBF
Infineon Technologies
MOSFET N-CH 40V 202A TO220AB
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
BSS123IXTMA1
BSS123IXTMA1
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
TLE72593GEXUMA3
TLE72593GEXUMA3
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
AUIPS7091GTR
AUIPS7091GTR
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
AUIR3313STRL
AUIR3313STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
CY7C67300-100AXIT
CY7C67300-100AXIT
Infineon Technologies
IC USB HOST/PERIPH CNTRL 100LQFP