BC850CWE6327
  • Share:

Infineon Technologies BC850CWE6327

Manufacturer No:
BC850CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CWE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It belongs to the BC850 series, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for various audio frequency (AF) and driver applications. This transistor is packaged in a surface-mount SOT323 format, enhancing its suitability for modern electronic designs where space is a critical factor.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO45V
Collector-base voltageVCBO50V
Emitter-base voltageVEBO6V
Collector currentIC100mA
Peak collector current (tp ≤ 10 ms)ICM200mA
Total power dissipation (TS ≤ 71 °C)Ptot250mW
Junction temperatureTj150°C
Transition frequency (fT) at IC = 10 mA, VCE = 5 VfT250MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb0.95pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz)Ceb9pF

Key Features

  • High current gain, making it suitable for AF input stages and driver applications.
  • Low collector-emitter saturation voltage, enhancing efficiency in switching and amplification tasks.
  • Surface-mount SOT323 package, ideal for compact and modern electronic designs.
  • High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
  • Low thermal resistance, ensuring reliable operation over a range of temperatures.

Applications

The BC850CWE6327 is versatile and can be used in various applications, including:

  • AUDIO FREQUENCY (AF) INPUT STAGES: Due to its high current gain and low noise characteristics, it is ideal for audio amplifiers and pre-amplifiers.
  • DRIVER APPLICATIONS: It can be used to drive small loads such as LEDs, relays, and other small electronic devices.
  • SWITCHING CIRCUITS: The low collector-emitter saturation voltage makes it efficient in switching applications.
  • GENERAL PURPOSE AMPLIFICATION: Suitable for a wide range of amplification tasks in electronic circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC850CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum collector current for the BC850CWE6327?
    The maximum collector current is 100 mA.
  3. What is the transition frequency (fT) of the BC850CWE6327?
    The transition frequency is 250 MHz at IC = 10 mA and VCE = 5 V.
  4. What is the package type of the BC850CWE6327?
    The package type is surface-mount SOT323.
  5. What are the typical applications of the BC850CWE6327?
    Typical applications include AF input stages, driver applications, switching circuits, and general-purpose amplification.
  6. What is the junction temperature limit for the BC850CWE6327?
    The junction temperature limit is 150 °C.
  7. What is the total power dissipation limit for the BC850CWE6327 at TS ≤ 71 °C?
    The total power dissipation limit is 250 mW.
  8. What are the emitter-base and collector-base capacitances of the BC850CWE6327?
    The emitter-base capacitance is 9 pF, and the collector-base capacitance is 0.95 pF.
  9. Is the BC850CWE6327 suitable for high-frequency applications?
    Yes, due to its high transition frequency of 250 MHz.
  10. What is the peak collector current rating for short pulses (tp ≤ 10 ms)?
    The peak collector current rating is 200 mA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC850CWE6327 BC850BWE6327 BC850CE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323-3 PG-SOT323-3 PG-SOT23

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS21E6327HTSA1
BAS21E6327HTSA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC847CWH6327XTSA1
BC847CWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC848BWH6327XTSA1
BC848BWH6327XTSA1
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BCP 53-16 E6327
BCP 53-16 E6327
Infineon Technologies
TRANS PNP 80V 1A SOT143R-3D
TLE9255WSKXUMA2
TLE9255WSKXUMA2
Infineon Technologies
IC TRANSCEIVER FULL DSO-14
ICE2PCS02GE8191XUMA1
ICE2PCS02GE8191XUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
TLE7368EXUMA5
TLE7368EXUMA5
Infineon Technologies
OPTIREG PMIC
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA