BC850CWE6327
  • Share:

Infineon Technologies BC850CWE6327

Manufacturer No:
BC850CWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CWE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It belongs to the BC850 series, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for various audio frequency (AF) and driver applications. This transistor is packaged in a surface-mount SOT323 format, enhancing its suitability for modern electronic designs where space is a critical factor.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO45V
Collector-base voltageVCBO50V
Emitter-base voltageVEBO6V
Collector currentIC100mA
Peak collector current (tp ≤ 10 ms)ICM200mA
Total power dissipation (TS ≤ 71 °C)Ptot250mW
Junction temperatureTj150°C
Transition frequency (fT) at IC = 10 mA, VCE = 5 VfT250MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb0.95pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz)Ceb9pF

Key Features

  • High current gain, making it suitable for AF input stages and driver applications.
  • Low collector-emitter saturation voltage, enhancing efficiency in switching and amplification tasks.
  • Surface-mount SOT323 package, ideal for compact and modern electronic designs.
  • High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
  • Low thermal resistance, ensuring reliable operation over a range of temperatures.

Applications

The BC850CWE6327 is versatile and can be used in various applications, including:

  • AUDIO FREQUENCY (AF) INPUT STAGES: Due to its high current gain and low noise characteristics, it is ideal for audio amplifiers and pre-amplifiers.
  • DRIVER APPLICATIONS: It can be used to drive small loads such as LEDs, relays, and other small electronic devices.
  • SWITCHING CIRCUITS: The low collector-emitter saturation voltage makes it efficient in switching applications.
  • GENERAL PURPOSE AMPLIFICATION: Suitable for a wide range of amplification tasks in electronic circuits.

Q & A

  1. What is the collector-emitter voltage rating of the BC850CWE6327?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum collector current for the BC850CWE6327?
    The maximum collector current is 100 mA.
  3. What is the transition frequency (fT) of the BC850CWE6327?
    The transition frequency is 250 MHz at IC = 10 mA and VCE = 5 V.
  4. What is the package type of the BC850CWE6327?
    The package type is surface-mount SOT323.
  5. What are the typical applications of the BC850CWE6327?
    Typical applications include AF input stages, driver applications, switching circuits, and general-purpose amplification.
  6. What is the junction temperature limit for the BC850CWE6327?
    The junction temperature limit is 150 °C.
  7. What is the total power dissipation limit for the BC850CWE6327 at TS ≤ 71 °C?
    The total power dissipation limit is 250 mW.
  8. What are the emitter-base and collector-base capacitances of the BC850CWE6327?
    The emitter-base capacitance is 9 pF, and the collector-base capacitance is 0.95 pF.
  9. Is the BC850CWE6327 suitable for high-frequency applications?
    Yes, due to its high transition frequency of 250 MHz.
  10. What is the peak collector current rating for short pulses (tp ≤ 10 ms)?
    The peak collector current rating is 200 mA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC850CWE6327 BC850BWE6327 BC850CE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323-3 PG-SOT323-3 PG-SOT23

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAV 199 B6327
BAV 199 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS4002LE6327XTMA1
BAS4002LE6327XTMA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA TSLP-2
BAS21E6327HTSA1
BAS21E6327HTSA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
ICE2PCS02GFUMA1
ICE2PCS02GFUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
STK14CA8-NF45ITR
STK14CA8-NF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC
CY7C1041DV33-10ZSXIT
CY7C1041DV33-10ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II