BC858B RFG
  • Share:

Taiwan Semiconductor Corporation BC858B RFG

Manufacturer No:
BC858B RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858B RFG is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. It is designed for low-power applications and is packaged in a small SOT-23 surface-mount device (SMD) plastic package. This transistor is suitable for a wide range of general-purpose switching and amplification applications due to its low current and voltage ratings.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)-30V
Collector-Emitter Voltage (VCEO)-30V
Emitter-Base Voltage (VEBO)-5V
Collector Current (IC)-100mA
Junction Temperature (TJ)-55 to +150°C
Storage Temperature (TSTG)-55 to +150°C
Power Dissipation (PD)200mW
DC Current Gain (hFE)220 to 475
Transition Frequency (fT)100MHz
PackageSOT-23

Key Features

  • Low power loss and high efficiency.
  • Ideal for automated placement.
  • High surge current capability.
  • Moisture sensitivity level: level 1.
  • Halogen-free (green compound).
  • Low current (max. 100 mA) and low voltage (max. 30 V) ratings.
  • General purpose switching and amplification.

Applications

The BC858B RFG is versatile and can be used in various applications, including general-purpose switching, amplification, and low-power electronic circuits. It is suitable for use in automotive, industrial, and consumer electronics due to its robust performance and small package size.

Q & A

  1. What is the collector-base voltage rating of the BC858B RFG?
    The collector-base voltage rating is -30 V.
  2. What is the maximum collector current of the BC858B RFG?
    The maximum collector current is -100 mA.
  3. What is the junction temperature range of the BC858B RFG?
    The junction temperature range is -55 to +150 °C.
  4. What is the power dissipation of the BC858B RFG?
    The power dissipation is 200 mW.
  5. What is the DC current gain range of the BC858B RFG?
    The DC current gain range is 220 to 475.
  6. What is the transition frequency of the BC858B RFG?
    The transition frequency is 100 MHz.
  7. In what package is the BC858B RFG available?
    The BC858B RFG is available in a SOT-23 surface-mount device (SMD) plastic package.
  8. Is the BC858B RFG RoHS compliant?
    Yes, the BC858B RFG is RoHS compliant.
  9. What are the typical applications of the BC858B RFG?
    The BC858B RFG is used in general-purpose switching, amplification, and low-power electronic circuits.
  10. Is the BC858B RFG suitable for automotive applications?
    Yes, the BC858B RFG is suitable for automotive applications due to its robust performance and small package size.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.03
16,353

Please send RFQ , we will respond immediately.

Same Series
BC856A RFG
BC856A RFG
TRANS PNP 65V 0.1A SOT23
BC856B RFG
BC856B RFG
TRANS PNP 65V 0.1A SOT23
BC857B RFG
BC857B RFG
TRANS PNP 45V 0.1A SOT23
BC857C RFG
BC857C RFG
TRANS PNP 45V 0.1A SOT23
BC858A RFG
BC858A RFG
TRANS PNP 30V 0.1A SOT23
BC858B RFG
BC858B RFG
TRANS PNP 30V 0.1A SOT23
BC858C RFG
BC858C RFG
TRANS PNP 30V 0.1A SOT23

Similar Products

Part Number BC858B RFG BC858C RFG BC858A RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23 SOT-23

Related Product By Categories

BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N5821 A0G
1N5821 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZX84C30 RFG
BZX84C30 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 30V 300MW SOT23
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23