1N4007G B0G
  • Share:

Taiwan Semiconductor Corporation 1N4007G B0G

Manufacturer No:
1N4007G B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007G B0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4007 series and is widely used in various electronic circuits for rectification and protection purposes. It features a high peak repetitive reverse voltage and a significant forward current capability, making it suitable for a range of applications.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm) Max 1000 V
Forward Current (If(AV)) 1 A
Forward Voltage (Vf) Max 1.1 V
Forward Surge Current (Ifsm) Max 30 A
Reverse Recovery Time (trr) Max - -
Operating Temperature Range -65°C to +150°C °C
Junction Temperature (Tj) Max 175 °C
Diode Case Style DO-41 (DO-204AL) -
No. of Pins 2 -
Termination Type Axial Leaded -
Reverse Leakage Current (Ir) Max 5 µA -
Junction Capacitance (Cj) 15 pF @ 4V, 1MHz -

Key Features

  • High Peak Repetitive Reverse Voltage: Up to 1000V, making it suitable for high-voltage applications.
  • High Forward Current Capability: 1A average rectified current.
  • Low Forward Voltage Drop: Maximum forward voltage of 1.1V at 1A.
  • High Surge Current Capability: Non-repetitive peak forward surge current of 30A.
  • Standard Recovery Time: Suitable for general-purpose rectification.
  • Pb-Free and Halogen-Free: Compliant with environmental regulations.
  • Through-Hole Mounting: DO-41 package with axial leads.

Applications

  • Rectification in Power Supplies: Used in AC-DC conversion circuits.
  • Back EMF Protection: Protects electronic circuits from voltage spikes when dealing with inductive loads like motors.
  • General-Purpose Rectification: Suitable for various electronic circuits requiring rectification.
  • Overvoltage Protection: Can be used to protect circuits from overvoltage conditions.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4007G B0G diode?

    The maximum repetitive reverse voltage is 1000V.

  2. What is the average forward rectified current of the 1N4007G B0G diode?

    The average forward rectified current is 1A.

  3. What is the maximum forward voltage drop of the 1N4007G B0G diode?

    The maximum forward voltage drop is 1.1V at 1A.

  4. What is the non-repetitive peak forward surge current of the 1N4007G B0G diode?

    The non-repetitive peak forward surge current is 30A.

  5. What is the operating temperature range of the 1N4007G B0G diode?

    The operating temperature range is -65°C to +150°C.

  6. What type of package does the 1N4007G B0G diode come in?

    The diode comes in a DO-41 (DO-204AL) package with axial leads.

  7. Is the 1N4007G B0G diode Pb-Free and Halogen-Free?

    Yes, the diode is Pb-Free and Halogen-Free.

  8. What is the typical junction capacitance of the 1N4007G B0G diode?

    The typical junction capacitance is 15 pF at 4V, 1MHz.

  9. What are common applications of the 1N4007G B0G diode?

    Common applications include rectification in power supplies, back EMF protection, and general-purpose rectification.

  10. Can the 1N4007G B0G diode be used for overvoltage protection?

    Yes, it can be used for overvoltage protection in various circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
356

Please send RFQ , we will respond immediately.

Same Series
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4002G R1G
1N4002G R1G
DIODE GEN PURP 100V 1A DO204AL
1N4004G R1G
1N4004G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4005GHR1G
1N4005GHR1G
DIODE GEN PURP 600V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4006GHA0G
1N4006GHA0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4007G B0G 1N4007GHB0G 1N4006G B0G 1N4007G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

1.5KE68A R0G
1.5KE68A R0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR460S R6
MUR460S R6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B3V6 L0G
BZV55B3V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55B11 L1G
BZV55B11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B20 L1G
BZV55B20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZV55C3V3 L1G
BZV55C3V3 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZX585B10 RKG
BZX585B10 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 200MW SOD523F