1N4004GHA0G
  • Share:

Taiwan Semiconductor Corporation 1N4004GHA0G

Manufacturer No:
1N4004GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GHA0G is a standard recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed to handle a maximum average forward current of 1A and can withstand peak currents up to 30A. It is widely used in various electronic circuits due to its robust specifications and reliability.

Key Specifications

Parameter Value
Maximum Average Forward Current 1 A
Non-repetitive Peak Current 30 A
Reverse Current 5 μA
RMS Reverse Voltage 280 V
Peak Repetitive Reverse Voltage 400 V
Package Type DO-41 (DO-204AL)

Key Features

  • Average forward current of 1A, with non-repetitive peak current up to 30A.
  • Low reverse current of 5 μA.
  • High peak repetitive reverse voltage of 400V.
  • Available in DO-41 package, making it suitable for a variety of applications.
  • Standard recovery time, suitable for general-purpose rectification.

Applications

  • Preventing reverse polarity problems in circuits.
  • Half-wave and full-wave rectifiers.
  • Protection devices to safeguard against voltage spikes.
  • Current flow regulators in power supply circuits.

Q & A

  1. What is the maximum average forward current of the 1N4004GHA0G diode?

    The maximum average forward current is 1 A.

  2. What is the peak repetitive reverse voltage of the 1N4004GHA0G diode?

    The peak repetitive reverse voltage is 400 V.

  3. What package type is the 1N4004GHA0G diode available in?

    The diode is available in the DO-41 (DO-204AL) package.

  4. What are some common applications of the 1N4004GHA0G diode?

    Common applications include preventing reverse polarity, half-wave and full-wave rectifiers, protection devices, and current flow regulators.

  5. What is the reverse current of the 1N4004GHA0G diode?

    The reverse current is 5 μA.

  6. Can the 1N4004GHA0G diode handle high peak currents?
  7. What is the RMS reverse voltage of the 1N4004GHA0G diode?

    The RMS reverse voltage is 280 V.

  8. Is the 1N4004GHA0G diode suitable for high-frequency applications?

    No, it is a standard recovery diode and not optimized for high-frequency applications.

  9. How do I identify the anode and cathode of the 1N4004GHA0G diode?

    The anode is where the current enters, and the cathode is where the current exits. The cathode can be identified by a grey bar on the diode.

  10. What are some alternative diodes to the 1N4004GHA0G?

    Alternative diodes include 1N4002, 1N4148, 1N4733A, 1N5408, and 1N5822.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
205

Please send RFQ , we will respond immediately.

Same Series
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4005GHA0G
1N4005GHA0G
DIODE GEN PURP 600V 1A DO204AL
1N4001G A0G
1N4001G A0G
DIODE GEN PURP 50V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4006G A0G
1N4006G A0G
DIODE GEN PURP 800V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHB0G
1N4003GHB0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4004GHA0G 1N4005GHA0G 1N4004GHB0G 1N4003GHA0G 1N4004G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

BAS316 RRG
BAS316 RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250MA SOD323
BAV21W RHG
BAV21W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
1N5406G A0G
1N5406G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B5V6 L0G
BZV55B5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL