1N4004GHA0G
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Taiwan Semiconductor Corporation 1N4004GHA0G

Manufacturer No:
1N4004GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GHA0G is a standard recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed to handle a maximum average forward current of 1A and can withstand peak currents up to 30A. It is widely used in various electronic circuits due to its robust specifications and reliability.

Key Specifications

Parameter Value
Maximum Average Forward Current 1 A
Non-repetitive Peak Current 30 A
Reverse Current 5 μA
RMS Reverse Voltage 280 V
Peak Repetitive Reverse Voltage 400 V
Package Type DO-41 (DO-204AL)

Key Features

  • Average forward current of 1A, with non-repetitive peak current up to 30A.
  • Low reverse current of 5 μA.
  • High peak repetitive reverse voltage of 400V.
  • Available in DO-41 package, making it suitable for a variety of applications.
  • Standard recovery time, suitable for general-purpose rectification.

Applications

  • Preventing reverse polarity problems in circuits.
  • Half-wave and full-wave rectifiers.
  • Protection devices to safeguard against voltage spikes.
  • Current flow regulators in power supply circuits.

Q & A

  1. What is the maximum average forward current of the 1N4004GHA0G diode?

    The maximum average forward current is 1 A.

  2. What is the peak repetitive reverse voltage of the 1N4004GHA0G diode?

    The peak repetitive reverse voltage is 400 V.

  3. What package type is the 1N4004GHA0G diode available in?

    The diode is available in the DO-41 (DO-204AL) package.

  4. What are some common applications of the 1N4004GHA0G diode?

    Common applications include preventing reverse polarity, half-wave and full-wave rectifiers, protection devices, and current flow regulators.

  5. What is the reverse current of the 1N4004GHA0G diode?

    The reverse current is 5 μA.

  6. Can the 1N4004GHA0G diode handle high peak currents?
  7. What is the RMS reverse voltage of the 1N4004GHA0G diode?

    The RMS reverse voltage is 280 V.

  8. Is the 1N4004GHA0G diode suitable for high-frequency applications?

    No, it is a standard recovery diode and not optimized for high-frequency applications.

  9. How do I identify the anode and cathode of the 1N4004GHA0G diode?

    The anode is where the current enters, and the cathode is where the current exits. The cathode can be identified by a grey bar on the diode.

  10. What are some alternative diodes to the 1N4004GHA0G?

    Alternative diodes include 1N4002, 1N4148, 1N4733A, 1N5408, and 1N5822.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4004GHA0G 1N4005GHA0G 1N4004GHB0G 1N4003GHA0G 1N4004G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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