BAV21 A0G
  • Share:

Taiwan Semiconductor Corporation BAV21 A0G

Manufacturer No:
BAV21 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 250V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21 A0G is a silicon epitaxial planar diode produced by Taiwan Semiconductor Corporation. This diode is designed for general-purpose applications and is part of the BAV series, which includes various voltage ratings. The BAV21 A0G is specifically rated for a repetitive peak reverse voltage (VRRM) of 250 V, making it suitable for a wide range of electronic circuits requiring reliable and efficient rectification.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)250V
Forward Continuous Current (IF)250mA
Peak Forward Surge Current (IFSM)1A
Forward Voltage (VF) at IF = 100 mA1V
Reverse Current (IR) at VR = 200 V100 nA
Junction Temperature (Tj)175°C
Storage Temperature Range (Tstg)-65 to +175°C
Thermal Resistance Junction to Ambient Air (RthJA)300K/W
Reverse Recovery Time (trr)50 ns

Key Features

  • Silicon epitaxial planar diode technology for high reliability and efficiency.
  • High repetitive peak reverse voltage (VRRM) of 250 V.
  • Forward continuous current of 250 mA.
  • Low forward voltage drop of 1 V at 100 mA.
  • Low reverse current of 100 nA at 200 V.
  • Compact DO-35 through-hole package.

Applications

The BAV21 A0G diode is suitable for various general-purpose applications, including rectification, voltage regulation, and protection circuits in electronic devices. It can be used in power supplies, audio equipment, and other electronic systems where reliable and efficient diode performance is required.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BAV21 A0G diode?
    The VRRM of the BAV21 A0G diode is 250 V.
  2. What is the forward continuous current (IF) of the BAV21 A0G diode?
    The forward continuous current (IF) is 250 mA.
  3. What is the peak forward surge current (IFSM) of the BAV21 A0G diode?
    The peak forward surge current (IFSM) is 1 A.
  4. What is the forward voltage (VF) at 100 mA for the BAV21 A0G diode?
    The forward voltage (VF) at 100 mA is 1 V.
  5. What is the reverse current (IR) at 200 V for the BAV21 A0G diode?
    The reverse current (IR) at 200 V is 100 nA.
  6. What is the junction temperature (Tj) rating for the BAV21 A0G diode?
    The junction temperature (Tj) rating is 175 °C.
  7. What is the storage temperature range (Tstg) for the BAV21 A0G diode?
    The storage temperature range (Tstg) is -65 to +175 °C.
  8. What is the thermal resistance junction to ambient air (RthJA) for the BAV21 A0G diode?
    The thermal resistance junction to ambient air (RthJA) is 300 K/W.
  9. What is the reverse recovery time (trr) for the BAV21 A0G diode?
    The reverse recovery time (trr) is 50 ns.
  10. In what package is the BAV21 A0G diode available?
    The BAV21 A0G diode is available in a DO-35 through-hole package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 nA @ 250 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
177

Please send RFQ , we will respond immediately.

Same Series
BAV19 A0G
BAV19 A0G
DIODE GEN PURP 100V 200MA DO35
BAV20 A0G
BAV20 A0G
DIODE GEN PURP 150V 200MA DO35

Similar Products

Part Number BAV21 A0G BAV20 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 150 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 nA @ 250 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD

Related Product By Brand

1.5KE120AH
1.5KE120AH
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
1N4148W-G RHG
1N4148W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
RB751V-40 RRG
RB751V-40 RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 30MA SOD323
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZX85C15 A0G
BZX85C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1.3W DO204AL
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZV55C5V6 L0G
BZV55C5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZV55B3V0 L0G
BZV55B3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF