BAV21 A0G
  • Share:

Taiwan Semiconductor Corporation BAV21 A0G

Manufacturer No:
BAV21 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 250V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21 A0G is a silicon epitaxial planar diode produced by Taiwan Semiconductor Corporation. This diode is designed for general-purpose applications and is part of the BAV series, which includes various voltage ratings. The BAV21 A0G is specifically rated for a repetitive peak reverse voltage (VRRM) of 250 V, making it suitable for a wide range of electronic circuits requiring reliable and efficient rectification.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)250V
Forward Continuous Current (IF)250mA
Peak Forward Surge Current (IFSM)1A
Forward Voltage (VF) at IF = 100 mA1V
Reverse Current (IR) at VR = 200 V100 nA
Junction Temperature (Tj)175°C
Storage Temperature Range (Tstg)-65 to +175°C
Thermal Resistance Junction to Ambient Air (RthJA)300K/W
Reverse Recovery Time (trr)50 ns

Key Features

  • Silicon epitaxial planar diode technology for high reliability and efficiency.
  • High repetitive peak reverse voltage (VRRM) of 250 V.
  • Forward continuous current of 250 mA.
  • Low forward voltage drop of 1 V at 100 mA.
  • Low reverse current of 100 nA at 200 V.
  • Compact DO-35 through-hole package.

Applications

The BAV21 A0G diode is suitable for various general-purpose applications, including rectification, voltage regulation, and protection circuits in electronic devices. It can be used in power supplies, audio equipment, and other electronic systems where reliable and efficient diode performance is required.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BAV21 A0G diode?
    The VRRM of the BAV21 A0G diode is 250 V.
  2. What is the forward continuous current (IF) of the BAV21 A0G diode?
    The forward continuous current (IF) is 250 mA.
  3. What is the peak forward surge current (IFSM) of the BAV21 A0G diode?
    The peak forward surge current (IFSM) is 1 A.
  4. What is the forward voltage (VF) at 100 mA for the BAV21 A0G diode?
    The forward voltage (VF) at 100 mA is 1 V.
  5. What is the reverse current (IR) at 200 V for the BAV21 A0G diode?
    The reverse current (IR) at 200 V is 100 nA.
  6. What is the junction temperature (Tj) rating for the BAV21 A0G diode?
    The junction temperature (Tj) rating is 175 °C.
  7. What is the storage temperature range (Tstg) for the BAV21 A0G diode?
    The storage temperature range (Tstg) is -65 to +175 °C.
  8. What is the thermal resistance junction to ambient air (RthJA) for the BAV21 A0G diode?
    The thermal resistance junction to ambient air (RthJA) is 300 K/W.
  9. What is the reverse recovery time (trr) for the BAV21 A0G diode?
    The reverse recovery time (trr) is 50 ns.
  10. In what package is the BAV21 A0G diode available?
    The BAV21 A0G diode is available in a DO-35 through-hole package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 nA @ 250 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
177

Please send RFQ , we will respond immediately.

Same Series
BAV19 A0G
BAV19 A0G
DIODE GEN PURP 100V 200MA DO35
BAV20 A0G
BAV20 A0G
DIODE GEN PURP 150V 200MA DO35

Similar Products

Part Number BAV21 A0G BAV20 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 150 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 nA @ 250 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

1.5KE68A B0G
1.5KE68A B0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
MUR460S R7
MUR460S R7
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55B3V0 L0G
BZV55B3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZX84C2V4 RFG
BZX84C2V4 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 300MW SOT23
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC857C RFG
BC857C RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC846BW RFG
BC846BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT323