BAV21 A0G
  • Share:

Taiwan Semiconductor Corporation BAV21 A0G

Manufacturer No:
BAV21 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 250V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21 A0G is a silicon epitaxial planar diode produced by Taiwan Semiconductor Corporation. This diode is designed for general-purpose applications and is part of the BAV series, which includes various voltage ratings. The BAV21 A0G is specifically rated for a repetitive peak reverse voltage (VRRM) of 250 V, making it suitable for a wide range of electronic circuits requiring reliable and efficient rectification.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)250V
Forward Continuous Current (IF)250mA
Peak Forward Surge Current (IFSM)1A
Forward Voltage (VF) at IF = 100 mA1V
Reverse Current (IR) at VR = 200 V100 nA
Junction Temperature (Tj)175°C
Storage Temperature Range (Tstg)-65 to +175°C
Thermal Resistance Junction to Ambient Air (RthJA)300K/W
Reverse Recovery Time (trr)50 ns

Key Features

  • Silicon epitaxial planar diode technology for high reliability and efficiency.
  • High repetitive peak reverse voltage (VRRM) of 250 V.
  • Forward continuous current of 250 mA.
  • Low forward voltage drop of 1 V at 100 mA.
  • Low reverse current of 100 nA at 200 V.
  • Compact DO-35 through-hole package.

Applications

The BAV21 A0G diode is suitable for various general-purpose applications, including rectification, voltage regulation, and protection circuits in electronic devices. It can be used in power supplies, audio equipment, and other electronic systems where reliable and efficient diode performance is required.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BAV21 A0G diode?
    The VRRM of the BAV21 A0G diode is 250 V.
  2. What is the forward continuous current (IF) of the BAV21 A0G diode?
    The forward continuous current (IF) is 250 mA.
  3. What is the peak forward surge current (IFSM) of the BAV21 A0G diode?
    The peak forward surge current (IFSM) is 1 A.
  4. What is the forward voltage (VF) at 100 mA for the BAV21 A0G diode?
    The forward voltage (VF) at 100 mA is 1 V.
  5. What is the reverse current (IR) at 200 V for the BAV21 A0G diode?
    The reverse current (IR) at 200 V is 100 nA.
  6. What is the junction temperature (Tj) rating for the BAV21 A0G diode?
    The junction temperature (Tj) rating is 175 °C.
  7. What is the storage temperature range (Tstg) for the BAV21 A0G diode?
    The storage temperature range (Tstg) is -65 to +175 °C.
  8. What is the thermal resistance junction to ambient air (RthJA) for the BAV21 A0G diode?
    The thermal resistance junction to ambient air (RthJA) is 300 K/W.
  9. What is the reverse recovery time (trr) for the BAV21 A0G diode?
    The reverse recovery time (trr) is 50 ns.
  10. In what package is the BAV21 A0G diode available?
    The BAV21 A0G diode is available in a DO-35 through-hole package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 nA @ 250 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
177

Please send RFQ , we will respond immediately.

Same Series
BAV19 A0G
BAV19 A0G
DIODE GEN PURP 100V 200MA DO35
BAV20 A0G
BAV20 A0G
DIODE GEN PURP 150V 200MA DO35

Similar Products

Part Number BAV21 A0G BAV20 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 150 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 nA @ 250 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
BAT42 A0
BAT42 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55C24 L0G
BZV55C24 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 24V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX84C39 RFG
BZX84C39 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 39V 300MW SOT23
BZV55B22 L1G
BZV55B22 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC847B RFG
BC847B RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323