1N5821HA0G
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Taiwan Semiconductor Corporation 1N5821HA0G

Manufacturer No:
1N5821HA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821HA0G is a Schottky barrier rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the 1N5820 series and is known for its high efficiency and low forward voltage drop. It is designed for high-current applications and is suitable for use in a variety of power management and rectification circuits.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 30 V
Maximum RMS Voltage (VRMS) 21 V
Maximum DC Blocking Voltage (VDC) 30 V
Non-Repetitive Peak Reverse Voltage (VRSM) 36 V
Maximum Average Forward Rectified Current (IF(AV)) 3.0 A
Peak Forward Surge Current (IFSM) 80 A
Maximum Instantaneous Forward Voltage (VF) 0.500 V
Operating Junction and Storage Temperature Range -65 to +125 °C
Package Type DO-201AD
Diode Type Schottky
Lead Type Axial Leaded

Key Features

  • Low forward voltage drop (VF = 0.500 V at IF = 3 A), reducing power losses and increasing efficiency.
  • High current handling capability with a maximum average forward rectified current of 3.0 A.
  • High surge current capability with a peak forward surge current of 80 A.
  • Wide operating temperature range from -65°C to +125°C.
  • Schottky barrier rectifier design for fast switching and low reverse leakage current.
  • Axial leaded package (DO-201AD) for easy mounting and soldering.

Applications

  • Power supplies and DC-DC converters.
  • Rectifier circuits in high-current applications.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive systems.
  • Automotive and industrial power electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821HA0G diode?

    The maximum repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the maximum average forward rectified current of the 1N5821HA0G diode?

    The maximum average forward rectified current (IF(AV)) is 3.0 A.

  3. What is the maximum instantaneous forward voltage of the 1N5821HA0G diode?

    The maximum instantaneous forward voltage (VF) is 0.500 V at IF = 3 A.

  4. What is the operating temperature range of the 1N5821HA0G diode?

    The operating temperature range is from -65°C to +125°C.

  5. What type of package does the 1N5821HA0G diode use?

    The diode uses a DO-201AD axial leaded package.

  6. What are some common applications of the 1N5821HA0G diode?

    Common applications include power supplies, DC-DC converters, rectifier circuits, switch-mode power supplies, motor control systems, and automotive and industrial power electronics.

  7. What is the peak forward surge current of the 1N5821HA0G diode?

    The peak forward surge current (IFSM) is 80 A.

  8. Is the 1N5821HA0G diode RoHS compliant?

    Yes, the 1N5821HA0G diode is RoHS compliant.

  9. What is the typical thermal resistance of the 1N5821HA0G diode?

    The typical thermal resistance (RθJA) is 40 °C/W.

  10. Can the 1N5821HA0G diode be used in high-frequency applications?

    Yes, the Schottky barrier rectifier design of the 1N5821HA0G makes it suitable for high-frequency applications due to its fast switching characteristics.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
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Similar Products

Part Number 1N5821HA0G 1N5822HA0G 1N5821HB0G 1N5820HA0G 1N5821 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 30 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 30 V 500 µA @ 20 V 500 µA @ 30 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

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