1N5821 B0G
  • Share:

Taiwan Semiconductor Corporation 1N5821 B0G

Manufacturer No:
1N5821 B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821 B0G is a high-performance Schottky barrier rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the 1N5820 series and is known for its low forward voltage drop and high current handling capabilities. The 1N5821 B0G is designed to meet the demands of various power supply and rectification applications, offering reliable and efficient performance.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 30 V
Maximum RMS Voltage (VRMS) 21 V
Maximum DC Blocking Voltage (VDC) 30 V
Non-Repetitive Peak Reverse Voltage (VRSM) 36 V
Maximum Average Forward Rectified Current (IF(AV)) 3.0 A
Peak Forward Surge Current (IFSM) 80 A
Maximum Instantaneous Forward Voltage (VF) 0.500 V
Operating Junction Temperature (TJ) -65 to +125 °C
Diode Configuration Single
Diode Case Style DO-201AD
No. of Pins 2 Pins
External Diameter 5.6 mm
External Length / Height 9.5 mm
Termination Type Axial Leaded

Key Features

  • Low forward voltage drop (VF) of 0.500 V, reducing power losses and improving efficiency.
  • High peak forward surge current (IFSM) of 80 A, ensuring robust performance under transient conditions.
  • Wide operating junction temperature range from -65°C to +125°C, making it suitable for various environmental conditions.
  • Single diode configuration in a DO-201AD package, providing a compact and reliable solution.
  • Axial leaded termination for easy integration into through-hole applications.

Applications

  • Power supply rectification: Ideal for converting AC to DC in power supplies due to its low forward voltage drop and high current handling.
  • Switch-mode power supplies: Used in SMPS designs to improve efficiency and reduce heat generation.
  • Motor control and drive systems: Suitable for rectification and protection in motor control circuits.
  • Automotive and industrial electronics: Used in various automotive and industrial applications requiring reliable and efficient rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N5821 B0G?

    The maximum repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the maximum average forward rectified current (IF(AV)) of the 1N5821 B0G?

    The maximum average forward rectified current (IF(AV)) is 3.0 A.

  3. What is the peak forward surge current (IFSM) of the 1N5821 B0G?

    The peak forward surge current (IFSM) is 80 A.

  4. What is the operating junction temperature range of the 1N5821 B0G?

    The operating junction temperature range is from -65°C to +125°C.

  5. What is the package type of the 1N5821 B0G?

    The package type is DO-201AD.

  6. What is the termination type of the 1N5821 B0G?

    The termination type is axial leaded.

  7. What are the typical applications of the 1N5821 B0G?

    Typical applications include power supply rectification, switch-mode power supplies, motor control and drive systems, and automotive and industrial electronics.

  8. What is the maximum instantaneous forward voltage (VF) of the 1N5821 B0G?

    The maximum instantaneous forward voltage (VF) is 0.500 V.

  9. Is the 1N5821 B0G RoHS compliant?

    Yes, the 1N5821 B0G is RoHS compliant.

  10. What is the external diameter and length of the 1N5821 B0G?

    The external diameter is 5.6 mm, and the external length is 9.5 mm.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
15

Please send RFQ , we will respond immediately.

Same Series
1N5820 A0G
1N5820 A0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HA0G
1N5820HA0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 A0G
1N5821 A0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 A0G
1N5822 A0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HA0G
1N5822HA0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5820 B0G
1N5820 B0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HB0G
1N5820HB0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 B0G
1N5821 B0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5821HB0G
1N5821HB0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 B0G
1N5822 B0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HB0G
1N5822HB0G
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821 B0G 1N5821HB0G 1N5822 B0G 1N5820 B0G 1N5821 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 40 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 20 V 500 µA @ 30 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA

Related Product By Brand

1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MBR10100H
MBR10100H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZV55B5V6 L0G
BZV55B5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55C20 L1G
BZV55C20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZV55C36 L1G
BZV55C36 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C5V1 L1G
BZV55C5V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF