1N5821 A0G
  • Share:

Taiwan Semiconductor Corporation 1N5821 A0G

Manufacturer No:
1N5821 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821 A0G is a Schottky Barrier Rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency and low power loss applications, featuring excellent high-temperature stability and high forward surge capability. It is AEC-Q101 qualified and RoHS compliant, making it suitable for a wide range of automotive and industrial applications.

Key Specifications

ParameterValueUnit
Voltage - DC Reverse (Vr) (Max)30V
Voltage - Forward (Vf) (Max) @ If0.500V @ 3 A
Current - Average Rectified (Io)3A
Operating Temperature - Junction-65°C ~ 125°C°C
Package / CaseDO-201AD, Axial
Mounting TypeThrough Hole
Current - Reverse Leakage @ Vr500 µA @ 30 VµA @ V
Capacitance @ Vr, F200 pF @ 4 V, 1 MHzpF @ V, MHz

Key Features

  • High efficiency and low power loss
  • Excellent high-temperature stability
  • High forward surge capability
  • AEC-Q101 qualified for automotive applications
  • RoHS compliant
  • Fast recovery time (< 500 ns)
  • Through-hole mounting type

Applications

The 1N5821 A0G Schottky Barrier Rectifier is suitable for various applications, including:

  • Automotive systems due to its AEC-Q101 qualification
  • Power supplies and switching circuits
  • High-frequency applications requiring fast recovery times
  • Industrial control systems and motor drives
  • General-purpose rectification in high-efficiency designs

Q & A

  1. What is the maximum reverse voltage of the 1N5821 A0G?
    The maximum reverse voltage (Vr) is 30 V.
  2. What is the average rectified current (Io) of the 1N5821 A0G?
    The average rectified current (Io) is 3 A.
  3. What is the forward voltage drop (Vf) of the 1N5821 A0G at 3 A?
    The forward voltage drop (Vf) at 3 A is 0.500 V.
  4. Is the 1N5821 A0G RoHS compliant?
    Yes, the 1N5821 A0G is RoHS compliant.
  5. What is the operating temperature range of the 1N5821 A0G?
    The operating temperature range is -65°C to 125°C.
  6. What is the package type of the 1N5821 A0G?
    The package type is DO-201AD, Axial.
  7. What is the mounting type of the 1N5821 A0G?
    The mounting type is Through Hole.
  8. What is the reverse leakage current of the 1N5821 A0G at 30 V?
    The reverse leakage current at 30 V is 500 µA.
  9. What is the junction capacitance of the 1N5821 A0G at 4 V and 1 MHz?
    The junction capacitance at 4 V and 1 MHz is 200 pF.
  10. Is the 1N5821 A0G AEC-Q101 qualified?
    Yes, the 1N5821 A0G is AEC-Q101 qualified.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
485

Please send RFQ , we will respond immediately.

Same Series
1N5820 A0G
1N5820 A0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HA0G
1N5820HA0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 A0G
1N5821 A0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5821HA0G
1N5821HA0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 A0G
1N5822 A0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HA0G
1N5822HA0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5820 B0G
1N5820 B0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HB0G
1N5820HB0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 B0G
1N5821 B0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 B0G
1N5822 B0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HB0G
1N5822HB0G
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821 A0G 1N5821HA0G 1N5822 A0G 1N5821 B0G 1N5820 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 40 V 30 V 20 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 30 V 500 µA @ 20 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

MUR1660CT
MUR1660CT
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
1N5821H
1N5821H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
1N5406G A0G
1N5406G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BAS16 RFG
BAS16 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOT23
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS85-L0 L1G
BAS85-L0 L1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC847AW RFG
BC847AW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323
TS321CX5 RFG
TS321CX5 RFG
Taiwan Semiconductor Corporation
IC OPAMP GP 1 CIRCUIT SOT25