1N5821 A0G
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Taiwan Semiconductor Corporation 1N5821 A0G

Manufacturer No:
1N5821 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 1N5821 A0G is a Schottky Barrier Rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency and low power loss applications, featuring excellent high-temperature stability and high forward surge capability. It is AEC-Q101 qualified and RoHS compliant, making it suitable for a wide range of automotive and industrial applications.

Key Specifications

ParameterValueUnit
Voltage - DC Reverse (Vr) (Max)30V
Voltage - Forward (Vf) (Max) @ If0.500V @ 3 A
Current - Average Rectified (Io)3A
Operating Temperature - Junction-65°C ~ 125°C°C
Package / CaseDO-201AD, Axial
Mounting TypeThrough Hole
Current - Reverse Leakage @ Vr500 µA @ 30 VµA @ V
Capacitance @ Vr, F200 pF @ 4 V, 1 MHzpF @ V, MHz

Key Features

  • High efficiency and low power loss
  • Excellent high-temperature stability
  • High forward surge capability
  • AEC-Q101 qualified for automotive applications
  • RoHS compliant
  • Fast recovery time (< 500 ns)
  • Through-hole mounting type

Applications

The 1N5821 A0G Schottky Barrier Rectifier is suitable for various applications, including:

  • Automotive systems due to its AEC-Q101 qualification
  • Power supplies and switching circuits
  • High-frequency applications requiring fast recovery times
  • Industrial control systems and motor drives
  • General-purpose rectification in high-efficiency designs

Q & A

  1. What is the maximum reverse voltage of the 1N5821 A0G?
    The maximum reverse voltage (Vr) is 30 V.
  2. What is the average rectified current (Io) of the 1N5821 A0G?
    The average rectified current (Io) is 3 A.
  3. What is the forward voltage drop (Vf) of the 1N5821 A0G at 3 A?
    The forward voltage drop (Vf) at 3 A is 0.500 V.
  4. Is the 1N5821 A0G RoHS compliant?
    Yes, the 1N5821 A0G is RoHS compliant.
  5. What is the operating temperature range of the 1N5821 A0G?
    The operating temperature range is -65°C to 125°C.
  6. What is the package type of the 1N5821 A0G?
    The package type is DO-201AD, Axial.
  7. What is the mounting type of the 1N5821 A0G?
    The mounting type is Through Hole.
  8. What is the reverse leakage current of the 1N5821 A0G at 30 V?
    The reverse leakage current at 30 V is 500 µA.
  9. What is the junction capacitance of the 1N5821 A0G at 4 V and 1 MHz?
    The junction capacitance at 4 V and 1 MHz is 200 pF.
  10. Is the 1N5821 A0G AEC-Q101 qualified?
    Yes, the 1N5821 A0G is AEC-Q101 qualified.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
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Similar Products

Part Number 1N5821 A0G 1N5821HA0G 1N5822 A0G 1N5821 B0G 1N5820 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 40 V 30 V 20 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 30 V 500 µA @ 20 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

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