1N5821 A0G
  • Share:

Taiwan Semiconductor Corporation 1N5821 A0G

Manufacturer No:
1N5821 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821 A0G is a Schottky Barrier Rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency and low power loss applications, featuring excellent high-temperature stability and high forward surge capability. It is AEC-Q101 qualified and RoHS compliant, making it suitable for a wide range of automotive and industrial applications.

Key Specifications

ParameterValueUnit
Voltage - DC Reverse (Vr) (Max)30V
Voltage - Forward (Vf) (Max) @ If0.500V @ 3 A
Current - Average Rectified (Io)3A
Operating Temperature - Junction-65°C ~ 125°C°C
Package / CaseDO-201AD, Axial
Mounting TypeThrough Hole
Current - Reverse Leakage @ Vr500 µA @ 30 VµA @ V
Capacitance @ Vr, F200 pF @ 4 V, 1 MHzpF @ V, MHz

Key Features

  • High efficiency and low power loss
  • Excellent high-temperature stability
  • High forward surge capability
  • AEC-Q101 qualified for automotive applications
  • RoHS compliant
  • Fast recovery time (< 500 ns)
  • Through-hole mounting type

Applications

The 1N5821 A0G Schottky Barrier Rectifier is suitable for various applications, including:

  • Automotive systems due to its AEC-Q101 qualification
  • Power supplies and switching circuits
  • High-frequency applications requiring fast recovery times
  • Industrial control systems and motor drives
  • General-purpose rectification in high-efficiency designs

Q & A

  1. What is the maximum reverse voltage of the 1N5821 A0G?
    The maximum reverse voltage (Vr) is 30 V.
  2. What is the average rectified current (Io) of the 1N5821 A0G?
    The average rectified current (Io) is 3 A.
  3. What is the forward voltage drop (Vf) of the 1N5821 A0G at 3 A?
    The forward voltage drop (Vf) at 3 A is 0.500 V.
  4. Is the 1N5821 A0G RoHS compliant?
    Yes, the 1N5821 A0G is RoHS compliant.
  5. What is the operating temperature range of the 1N5821 A0G?
    The operating temperature range is -65°C to 125°C.
  6. What is the package type of the 1N5821 A0G?
    The package type is DO-201AD, Axial.
  7. What is the mounting type of the 1N5821 A0G?
    The mounting type is Through Hole.
  8. What is the reverse leakage current of the 1N5821 A0G at 30 V?
    The reverse leakage current at 30 V is 500 µA.
  9. What is the junction capacitance of the 1N5821 A0G at 4 V and 1 MHz?
    The junction capacitance at 4 V and 1 MHz is 200 pF.
  10. Is the 1N5821 A0G AEC-Q101 qualified?
    Yes, the 1N5821 A0G is AEC-Q101 qualified.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
485

Please send RFQ , we will respond immediately.

Same Series
1N5820 A0G
1N5820 A0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HA0G
1N5820HA0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 A0G
1N5821 A0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 A0G
1N5822 A0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HA0G
1N5822HA0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5820 B0G
1N5820 B0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HB0G
1N5820HB0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 B0G
1N5821 B0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5821HB0G
1N5821HB0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 B0G
1N5822 B0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HB0G
1N5822HB0G
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821 A0G 1N5821HA0G 1N5822 A0G 1N5821 B0G 1N5820 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 40 V 30 V 20 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 30 V 500 µA @ 20 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

1N4148W-G RHG
1N4148W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54 RFG
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR460S R6
MUR460S R6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZX84C2V7 RFG
BZX84C2V7 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 300MW SOT23
BZV55B10 L1G
BZV55B10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323