1N5821HB0G
  • Share:

Taiwan Semiconductor Corporation 1N5821HB0G

Manufacturer No:
1N5821HB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821HB0G is a Schottky Barrier Rectifier produced by Taiwan Semiconductor Corporation. This component is part of the company's extensive portfolio of power management solutions, which include rectifiers, MOSFETs, diodes, ICs, and sensors. Taiwan Semiconductor Corporation is known for its high-quality electronic components used across various industries such as automotive, industrial instruments, and consumer goods.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM30V
Maximum RMS VoltageVRMS21V
Maximum DC Blocking VoltageVDC30V
Non-repetitive Peak Reverse VoltageVRSM36V
Maximum Average Forward Rectified CurrentIF(AV)3.0A
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM80A
Maximum Instantaneous Forward Voltage (at 3.0 A)VF0.500V
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +125°C
Package TypeDO-201AD

Key Features

  • Low Forward Voltage Drop: The 1N5821HB0G features a low forward voltage drop of 0.500 V at 3.0 A, making it efficient for high-frequency applications.
  • High Surge Current Capability: It can handle a peak forward surge current of 80 A for 8.3 ms, ensuring robust performance under transient conditions.
  • Wide Operating Temperature Range: The component operates within a temperature range of -65 to +125 °C, making it suitable for various environmental conditions.
  • RoHS Compliance: The 1N5821HB0G is RoHS-compliant, ensuring it meets environmental standards.
  • Compact Packaging: The DO-201AD package is compact and suitable for space-constrained designs.

Applications

The 1N5821HB0G Schottky Barrier Rectifier is ideal for various applications, including:

  • Low Voltage High Frequency Inverters: Its low forward voltage drop and high frequency capabilities make it suitable for inverter applications.
  • Freewheeling Diodes: It is often used as a freewheeling diode in DC/DC converters and motor control circuits.
  • DC/DC Converters: The component's high efficiency and low voltage drop make it a good choice for DC/DC converter designs.
  • Polarity Protection: It can be used for polarity protection in power supply circuits to prevent reverse voltage damage.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821HB0G?
    The maximum repetitive peak reverse voltage is 30 V.
  2. What is the maximum average forward rectified current of the 1N5821HB0G?
    The maximum average forward rectified current is 3.0 A.
  3. What is the peak forward surge current capability of the 1N5821HB0G?
    The peak forward surge current is 80 A for 8.3 ms.
  4. What is the operating junction and storage temperature range of the 1N5821HB0G?
    The operating junction and storage temperature range is -65 to +125 °C.
  5. Is the 1N5821HB0G RoHS-compliant?
    Yes, the 1N5821HB0G is RoHS-compliant.
  6. What is the package type of the 1N5821HB0G?
    The package type is DO-201AD.
  7. What are some common applications of the 1N5821HB0G?
    Common applications include low voltage high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection.
  8. What is the maximum instantaneous forward voltage of the 1N5821HB0G at 3.0 A?
    The maximum instantaneous forward voltage at 3.0 A is 0.500 V.
  9. Is the 1N5821HB0G suitable for automotive applications?
    While it can be used in various applications, it is not specifically automotive-qualified. For automotive applications, consider other components from Taiwan Semiconductor that are AEC-Q certified.
  10. Where can I find more detailed specifications for the 1N5821HB0G?
    You can find detailed specifications on the official Taiwan Semiconductor website or through authorized distributors like Digi-Key, Mouser, or Avnet.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
504

Please send RFQ , we will respond immediately.

Same Series
1N5820 A0G
1N5820 A0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HA0G
1N5820HA0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 A0G
1N5821 A0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 A0G
1N5822 A0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HA0G
1N5822HA0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5820 B0G
1N5820 B0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HB0G
1N5820HB0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 B0G
1N5821 B0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5821HB0G
1N5821HB0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 B0G
1N5822 B0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HB0G
1N5822HB0G
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821HB0G 1N5822HB0G 1N5820HB0G 1N5821 B0G 1N5821HA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 20 V 30 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 20 V 500 µA @ 30 V 500 µA @ 30 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC

Related Product By Brand

SMBJ5.0CAHR5G
SMBJ5.0CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
1N4001GHR1G
1N4001GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B3V3 L0G
BZV55B3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55C51 L1G
BZV55C51 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
BZV55B10 L1G
BZV55B10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23