1N5821HB0G
  • Share:

Taiwan Semiconductor Corporation 1N5821HB0G

Manufacturer No:
1N5821HB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821HB0G is a Schottky Barrier Rectifier produced by Taiwan Semiconductor Corporation. This component is part of the company's extensive portfolio of power management solutions, which include rectifiers, MOSFETs, diodes, ICs, and sensors. Taiwan Semiconductor Corporation is known for its high-quality electronic components used across various industries such as automotive, industrial instruments, and consumer goods.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM30V
Maximum RMS VoltageVRMS21V
Maximum DC Blocking VoltageVDC30V
Non-repetitive Peak Reverse VoltageVRSM36V
Maximum Average Forward Rectified CurrentIF(AV)3.0A
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM80A
Maximum Instantaneous Forward Voltage (at 3.0 A)VF0.500V
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +125°C
Package TypeDO-201AD

Key Features

  • Low Forward Voltage Drop: The 1N5821HB0G features a low forward voltage drop of 0.500 V at 3.0 A, making it efficient for high-frequency applications.
  • High Surge Current Capability: It can handle a peak forward surge current of 80 A for 8.3 ms, ensuring robust performance under transient conditions.
  • Wide Operating Temperature Range: The component operates within a temperature range of -65 to +125 °C, making it suitable for various environmental conditions.
  • RoHS Compliance: The 1N5821HB0G is RoHS-compliant, ensuring it meets environmental standards.
  • Compact Packaging: The DO-201AD package is compact and suitable for space-constrained designs.

Applications

The 1N5821HB0G Schottky Barrier Rectifier is ideal for various applications, including:

  • Low Voltage High Frequency Inverters: Its low forward voltage drop and high frequency capabilities make it suitable for inverter applications.
  • Freewheeling Diodes: It is often used as a freewheeling diode in DC/DC converters and motor control circuits.
  • DC/DC Converters: The component's high efficiency and low voltage drop make it a good choice for DC/DC converter designs.
  • Polarity Protection: It can be used for polarity protection in power supply circuits to prevent reverse voltage damage.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821HB0G?
    The maximum repetitive peak reverse voltage is 30 V.
  2. What is the maximum average forward rectified current of the 1N5821HB0G?
    The maximum average forward rectified current is 3.0 A.
  3. What is the peak forward surge current capability of the 1N5821HB0G?
    The peak forward surge current is 80 A for 8.3 ms.
  4. What is the operating junction and storage temperature range of the 1N5821HB0G?
    The operating junction and storage temperature range is -65 to +125 °C.
  5. Is the 1N5821HB0G RoHS-compliant?
    Yes, the 1N5821HB0G is RoHS-compliant.
  6. What is the package type of the 1N5821HB0G?
    The package type is DO-201AD.
  7. What are some common applications of the 1N5821HB0G?
    Common applications include low voltage high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection.
  8. What is the maximum instantaneous forward voltage of the 1N5821HB0G at 3.0 A?
    The maximum instantaneous forward voltage at 3.0 A is 0.500 V.
  9. Is the 1N5821HB0G suitable for automotive applications?
    While it can be used in various applications, it is not specifically automotive-qualified. For automotive applications, consider other components from Taiwan Semiconductor that are AEC-Q certified.
  10. Where can I find more detailed specifications for the 1N5821HB0G?
    You can find detailed specifications on the official Taiwan Semiconductor website or through authorized distributors like Digi-Key, Mouser, or Avnet.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
504

Please send RFQ , we will respond immediately.

Same Series
1N5820 A0G
1N5820 A0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HA0G
1N5820HA0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 A0G
1N5821 A0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 A0G
1N5822 A0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HA0G
1N5822HA0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5820 B0G
1N5820 B0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5820HB0G
1N5820HB0G
DIODE SCHOTTKY 20V 3A DO201AD
1N5821 B0G
1N5821 B0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5821HB0G
1N5821HB0G
DIODE SCHOTTKY 30V 3A DO201AD
1N5822 B0G
1N5822 B0G
DIODE SCHOTTKY 40V 3A DO201AD
1N5822HB0G
1N5822HB0G
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821HB0G 1N5822HB0G 1N5820HB0G 1N5821 B0G 1N5821HA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 20 V 30 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 20 V 500 µA @ 30 V 500 µA @ 30 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
RB751V-40 RRG
RB751V-40 RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 30MA SOD323
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
MUR420S M6G
MUR420S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MBR10100 C0G
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX585B6V2 RKG
BZX585B6V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC857C RFG
BC857C RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23