BAS85-L0 L1G
  • Share:

Taiwan Semiconductor Corporation BAS85-L0 L1G

Manufacturer No:
BAS85-L0 L1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0 L1G is a small signal Schottky diode produced by Taiwan Semiconductor Corporation. This diode is designed for applications where low forward voltage drop and high switching speed are essential. It is part of the BAS85 series, known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterSymbolValueUnit
Continuous Reverse VoltageVR30V
Forward Continuous CurrentIF200mA
Peak Forward CurrentIFM300mA
Surge Forward Current (tp < 1 s)IFSM600mA
Power Dissipation (Tamb = 65 °C)Ptot200mW
Thermal Resistance Junction to Ambient AirRthJA430K/W
Junction TemperatureTj125°C
Storage Temperature RangeTstg-55 to +150°C
Operating Temperature RangeTop-55 to +125°C
Forward Voltage (IF = 0.1 mA, tp < 300 μs)VF240mV
Forward Voltage (IF = 1 mA, tp < 300 μs)VF320mV
Reverse Recovery Time (IF = 10 mA, IR = 10 mA)trr5ns
Diode Capacitance (VR = 1 V, f = 1 MHz)CD10pF

Key Features

  • Low forward voltage drop, making it suitable for applications requiring minimal voltage loss.
  • High switching speed with a reverse recovery time of 5 ns.
  • Compact mini MELF package, ideal for space-saving designs.
  • Wide operating temperature range from -55 °C to +125 °C.
  • Low leakage current and high surge current capability.

Applications

The BAS85-L0 L1G is used in various applications where low forward voltage and high switching speed are critical. These include:

  • Switching power supplies and DC-DC converters.
  • High-frequency circuits and RF applications.
  • Audio and video equipment where low noise and distortion are essential.
  • Automotive and industrial control systems requiring reliable and efficient diodes.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS85-L0 L1G?
    The maximum continuous reverse voltage is 30 V.
  2. What is the forward continuous current rating of this diode?
    The forward continuous current rating is 200 mA.
  3. What is the peak forward current rating for the BAS85-L0 L1G?
    The peak forward current rating is 300 mA.
  4. What is the typical forward voltage drop at 0.1 mA?
    The typical forward voltage drop at 0.1 mA is 240 mV.
  5. What is the reverse recovery time of the BAS85-L0 L1G?
    The reverse recovery time is 5 ns.
  6. What is the operating temperature range for this diode?
    The operating temperature range is from -55 °C to +125 °C.
  7. What is the storage temperature range for the BAS85-L0 L1G?
    The storage temperature range is from -55 °C to +150 °C.
  8. What is the thermal resistance junction to ambient air for this diode?
    The thermal resistance junction to ambient air is 430 K/W.
  9. What is the typical diode capacitance at 1 V and 1 MHz?
    The typical diode capacitance is 10 pF.
  10. In what types of applications is the BAS85-L0 L1G commonly used?
    The BAS85-L0 L1G is commonly used in switching power supplies, high-frequency circuits, audio and video equipment, and automotive and industrial control systems.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK

Related Product By Brand

1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR460SHR7G
MUR460SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4001GHR1G
1N4001GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
BAT42-L0 R0
BAT42-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BAT43X RS
BAT43X RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX585B6V2 RSG
BZX585B6V2 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZV55C16 L1G
BZV55C16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX585B3V0 RKG
BZX585B3V0 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F