BAS85-L0 L1G
  • Share:

Taiwan Semiconductor Corporation BAS85-L0 L1G

Manufacturer No:
BAS85-L0 L1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0 L1G is a small signal Schottky diode produced by Taiwan Semiconductor Corporation. This diode is designed for applications where low forward voltage drop and high switching speed are essential. It is part of the BAS85 series, known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterSymbolValueUnit
Continuous Reverse VoltageVR30V
Forward Continuous CurrentIF200mA
Peak Forward CurrentIFM300mA
Surge Forward Current (tp < 1 s)IFSM600mA
Power Dissipation (Tamb = 65 °C)Ptot200mW
Thermal Resistance Junction to Ambient AirRthJA430K/W
Junction TemperatureTj125°C
Storage Temperature RangeTstg-55 to +150°C
Operating Temperature RangeTop-55 to +125°C
Forward Voltage (IF = 0.1 mA, tp < 300 μs)VF240mV
Forward Voltage (IF = 1 mA, tp < 300 μs)VF320mV
Reverse Recovery Time (IF = 10 mA, IR = 10 mA)trr5ns
Diode Capacitance (VR = 1 V, f = 1 MHz)CD10pF

Key Features

  • Low forward voltage drop, making it suitable for applications requiring minimal voltage loss.
  • High switching speed with a reverse recovery time of 5 ns.
  • Compact mini MELF package, ideal for space-saving designs.
  • Wide operating temperature range from -55 °C to +125 °C.
  • Low leakage current and high surge current capability.

Applications

The BAS85-L0 L1G is used in various applications where low forward voltage and high switching speed are critical. These include:

  • Switching power supplies and DC-DC converters.
  • High-frequency circuits and RF applications.
  • Audio and video equipment where low noise and distortion are essential.
  • Automotive and industrial control systems requiring reliable and efficient diodes.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS85-L0 L1G?
    The maximum continuous reverse voltage is 30 V.
  2. What is the forward continuous current rating of this diode?
    The forward continuous current rating is 200 mA.
  3. What is the peak forward current rating for the BAS85-L0 L1G?
    The peak forward current rating is 300 mA.
  4. What is the typical forward voltage drop at 0.1 mA?
    The typical forward voltage drop at 0.1 mA is 240 mV.
  5. What is the reverse recovery time of the BAS85-L0 L1G?
    The reverse recovery time is 5 ns.
  6. What is the operating temperature range for this diode?
    The operating temperature range is from -55 °C to +125 °C.
  7. What is the storage temperature range for the BAS85-L0 L1G?
    The storage temperature range is from -55 °C to +150 °C.
  8. What is the thermal resistance junction to ambient air for this diode?
    The thermal resistance junction to ambient air is 430 K/W.
  9. What is the typical diode capacitance at 1 V and 1 MHz?
    The typical diode capacitance is 10 pF.
  10. In what types of applications is the BAS85-L0 L1G commonly used?
    The BAS85-L0 L1G is commonly used in switching power supplies, high-frequency circuits, audio and video equipment, and automotive and industrial control systems.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC

Related Product By Brand

1.5KE6.8A A0G
1.5KE6.8A A0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BZW06-15B A0G
BZW06-15B A0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
MUR820HC0G
MUR820HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
MUR160A B0G
MUR160A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55B5V6 L0G
BZV55B5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX585B10 RKG
BZX585B10 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 200MW SOD523F
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23