1N4937G B0G
  • Share:

Taiwan Semiconductor Corporation 1N4937G B0G

Manufacturer No:
1N4937G B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937G B0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for a wide range of applications requiring high reliability and performance. It features a maximum DC reverse voltage of 600V and an average rectified current of 1A, making it suitable for various power rectification and voltage regulation tasks. The diode is packaged in a DO-204AL (DO-41) axial case, which is convenient for through-hole mounting. With its fast recovery time and low forward voltage drop, the 1N4937G B0G is an excellent choice for designers seeking efficient and robust rectification solutions.

Key Specifications

Parameter Value Unit
Manufacturer Taiwan Semiconductor Corporation
Model Name 1N4937G B0G
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 @ 1 A V @ A
Reverse Recovery Time (trr) 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V µA @ V
Capacitance @ Vr, F 10 pF @ 4 V, 1 MHz pF @ V, MHz
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55°C ~ 150°C °C

Key Features

  • High Voltage Rating: The diode has a maximum DC reverse voltage of 600V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle an average rectified current of 1A, which is ideal for power rectification tasks.
  • Fast Recovery Time: The diode features a fast recovery time of less than 500ns, which is beneficial for applications requiring quick switching.
  • Low Forward Voltage Drop: The forward voltage drop is 1.2V at 1A, which minimizes power loss during operation.
  • Wide Operating Temperature Range: The diode can operate within a junction temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
  • Through-Hole Mounting: The DO-204AL (DO-41) axial package allows for easy through-hole mounting on PCBs.

Applications

  • Power Rectification: Suitable for rectifying AC to DC in power supplies, motor control circuits, and other high-current applications.
  • Voltage Regulation: Can be used in voltage regulator circuits to stabilize output voltages.
  • Switching Circuits: The fast recovery time makes it suitable for use in switching circuits, such as inverter and converter applications.
  • Industrial Control Systems: Used in various industrial control systems where high reliability and performance are required.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4937G B0G diode?

    The maximum DC reverse voltage is 600V.

  2. What is the average rectified current rating of the 1N4937G B0G?

    The average rectified current rating is 1A.

  3. What is the forward voltage drop of the 1N4937G B0G at 1A?

    The forward voltage drop is 1.2V at 1A.

  4. What is the reverse recovery time of the 1N4937G B0G?

    The reverse recovery time is less than 500ns.

  5. What is the operating temperature range of the 1N4937G B0G?

    The operating temperature range is -55°C to 150°C.

  6. What type of package does the 1N4937G B0G come in?

    The diode comes in a DO-204AL (DO-41) axial package.

  7. Is the 1N4937G B0G suitable for high-frequency applications?

    Yes, due to its fast recovery time, it is suitable for high-frequency applications.

  8. What is the typical application of the 1N4937G B0G?

    Typical applications include power rectification, voltage regulation, and switching circuits.

  9. Is the 1N4937G B0G RoHS compliant?

    No, the 1N4937G B0G is not RoHS compliant according to some sources.

  10. How do I mount the 1N4937G B0G on a PCB?

    The diode is mounted using through-hole technology due to its axial package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
324

Please send RFQ , we will respond immediately.

Same Series
1N4933GHR1G
1N4933GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4934GHR1G
1N4934GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4935G R1G
1N4935G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4935GHR1G
1N4935GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4936G R1G
1N4936G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4937G R1G
1N4937G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4933G R0G
1N4933G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4933GHA0G
1N4933GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4934GHA0G
1N4934GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4934G B0G
1N4934G B0G
DIODE GEN PURP 100V 1A DO204AL
1N4935G B0G
1N4935G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4935GHB0G
1N4935GHB0G
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4937G B0G 1N4937GHB0G 1N4934G B0G 1N4935G B0G 1N4936G B0G 1N4937G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41

Related Product By Brand

BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
1N4007G A0G
1N4007G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43X RS
BAT43X RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
ZM4742A L0G
ZM4742A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 1W MELF
BZV55B20 L1G
BZV55B20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323