1N4002GHR0G
  • Share:

Taiwan Semiconductor Corporation 1N4002GHR0G

Manufacturer No:
1N4002GHR0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GHR0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed to handle moderate to high current and voltage levels, making it suitable for a wide range of power supply, inverter, and converter applications.

Key Specifications

ParameterValueUnit
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1 A
Current - Reverse Leakage @ Vr5µA @ 100 V
Capacitance @ Vr, F10pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseDO-204AL, DO-41, Axial
Operating Temperature - Junction-55°C ~ 150°C

Key Features

  • High Voltage and Current Handling: The 1N4002GHR0G can handle up to 100 V of DC reverse voltage and 1 A of average rectified current, making it suitable for various power applications.
  • Standard Recovery Time: This diode has a standard recovery time greater than 500 ns, which is adequate for many general-purpose rectification needs.
  • Low Forward Voltage Drop: With a maximum forward voltage drop of 1 V at 1 A, it minimizes energy loss during operation.
  • High Operating Temperature Range: The diode can operate within a junction temperature range of -55°C to 150°C, ensuring reliability in diverse environmental conditions.
  • UL 94 V-0 Compliant: The molding compound meets the UL 94 V-0 flammability rating, enhancing safety in applications.

Applications

The 1N4002GHR0G is widely used in various applications, including:

  • General Purpose Rectification: Suitable for power supplies, inverters, and converters.
  • Freewheeling Diodes: Often used in motor control circuits and other applications requiring freewheeling diodes.
  • Bridge Rectifier Circuits: Can be used in bridge rectifier configurations for AC to DC conversion.
  • Automotive Systems: Given its AEC-Q101 qualification, it is also used in automotive power electronics and other high-reliability applications.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4002GHR0G diode?
    The maximum DC reverse voltage is 100 V.
  2. What is the average rectified current rating of the 1N4002GHR0G?
    The average rectified current rating is 1 A.
  3. What is the maximum forward voltage drop at 1 A for the 1N4002GHR0G?
    The maximum forward voltage drop at 1 A is 1 V.
  4. What is the operating temperature range of the 1N4002GHR0G?
    The operating temperature range is -55°C to 150°C.
  5. Is the 1N4002GHR0G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive power electronics.
  6. What type of package does the 1N4002GHR0G come in?
    The diode comes in a DO-204AL (DO-41) axial package.
  7. What is the reverse leakage current at 100 V for the 1N4002GHR0G?
    The reverse leakage current at 100 V is 5 µA.
  8. Is the 1N4002GHR0G UL 94 V-0 compliant?
    Yes, the molding compound meets the UL 94 V-0 flammability rating.
  9. What are some common applications of the 1N4002GHR0G?
    Common applications include general-purpose rectification, freewheeling diodes, bridge rectifier circuits, and automotive systems.
  10. Is the 1N4002GHR0G available in tape and reel packaging?
    Yes, it is available in tape and reel (TR) packaging.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
136

Please send RFQ , we will respond immediately.

Same Series
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR1G
1N4002GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4004G R1G
1N4004G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4006GHR1G
1N4006GHR1G
DIODE GEN PURP 800V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4001G A0G
1N4001G A0G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4006G A0G
1N4006G A0G
DIODE GEN PURP 800V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4002GHR0G 1N4002GHR1G 1N4003GHR0G 1N4001GHR0G 1N4002G R0G 1N4002GHA0G 1N4002GHB0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 200 V 50 V 100 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAT42W RHG
BAT42W RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD123
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR460HB0G
MUR460HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZV55B5V6 L0G
BZV55B5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX585B9V1 RSG
BZX585B9V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BC848B RFG
BC848B RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT23
BC856B RFG
BC856B RFG
Taiwan Semiconductor Corporation
TRANS PNP 65V 0.1A SOT23