1N4002GHR1G
  • Share:

Taiwan Semiconductor Corporation 1N4002GHR1G

Manufacturer No:
1N4002GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GHR1G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for a wide range of applications requiring a reliable and efficient rectification process. It features a maximum DC reverse voltage of 100V and an average rectified current of 1A, making it suitable for various power supply and rectification needs.

Key Specifications

ParameterValue
ManufacturerTaiwan Semiconductor Corporation
Model Name1N4002GHR1G
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)1 A
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A
Current - Reverse Leakage @ Vr5 µA @ 100 V
Capacitance @ Vr, F10 pF @ 4 V, 1 MHz
SpeedStandard Recovery >500 ns, > 200 mA (Io)
Operating Temperature - Junction-55°C ~ 150°C
Mounting TypeThrough Hole
Package / CaseDO-204AL, DO-41, Axial
Supplier Device PackageDO-204AL (DO-41)
Part StatusActive

Key Features

  • High DC Reverse Voltage: Up to 100 V, ensuring robust performance in various applications.
  • High Average Rectified Current: 1 A, suitable for power supply and rectification needs.
  • Low Forward Voltage Drop: 1 V @ 1 A, minimizing energy loss during operation.
  • Standard Recovery Time: >500 ns, > 200 mA (Io), providing reliable switching characteristics.
  • Broad Operating Temperature Range: -55°C ~ 150°C, making it versatile for different environmental conditions.
  • Through-Hole Mounting: Easy to integrate into existing designs with DO-204AL, DO-41, and Axial packages.

Applications

The 1N4002GHR1G diode is widely used in various applications, including:

  • Power Supplies: For rectification and voltage regulation in power supply circuits.
  • Audio and Video Equipment: To protect against voltage spikes and ensure stable operation.
  • Automotive Systems: Compliant with AEC-Q101 standards, making it suitable for automotive applications.
  • Industrial Control Systems: For reliable rectification and protection in industrial control circuits.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4002GHR1G diode?
    The maximum DC reverse voltage is 100 V.
  2. What is the average rectified current of the 1N4002GHR1G diode?
    The average rectified current is 1 A.
  3. What is the forward voltage drop of the 1N4002GHR1G diode at 1 A?
    The forward voltage drop is 1 V @ 1 A.
  4. What is the recovery time of the 1N4002GHR1G diode?
    The recovery time is >500 ns, > 200 mA (Io).
  5. What is the operating temperature range of the 1N4002GHR1G diode?
    The operating temperature range is -55°C ~ 150°C.
  6. What type of mounting does the 1N4002GHR1G diode use?
    The diode uses through-hole mounting.
  7. What are the package options for the 1N4002GHR1G diode?
    The package options include DO-204AL, DO-41, and Axial.
  8. Is the 1N4002GHR1G diode compliant with automotive standards?
    Yes, it is compliant with AEC-Q101 standards.
  9. What is the reverse leakage current of the 1N4002GHR1G diode at 100 V?
    The reverse leakage current is 5 µA @ 100 V.
  10. What is the capacitance of the 1N4002GHR1G diode at 4 V and 1 MHz?
    The capacitance is 10 pF @ 4 V, 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
484

Please send RFQ , we will respond immediately.

Same Series
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4001G R1G
1N4001G R1G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4003G R1G
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4005G R1G
1N4005G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4006GHR1G
1N4006GHR1G
DIODE GEN PURP 800V 1A DO204AL
1N4007G R1G
1N4007G R1G
DIODE GEN PURP 1A DO204AL
1N4001G A0G
1N4001G A0G
DIODE GEN PURP 50V 1A DO204AL
1N4002G B0G
1N4002G B0G
DIODE GEN PURP 100V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4007G B0G
1N4007G B0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4002GHR1G 1N4003GHR1G 1N4001GHR1G 1N4002G R1G 1N4002GHR0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 50 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

1.5KE6.8AHR0G
1.5KE6.8AHR0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
1N4004GA0
1N4004GA0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
MUR460S R6
MUR460S R6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C18 L0G
BZV55C18 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
ZM4733A L0G
ZM4733A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W MELF
BZV55B47 L1G
BZV55B47 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZX55C4V7 A0G
BZX55C4V7 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW DO35
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC817-25W RFG
BC817-25W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323