1N4002GHR1G
  • Share:

Taiwan Semiconductor Corporation 1N4002GHR1G

Manufacturer No:
1N4002GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GHR1G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for a wide range of applications requiring a reliable and efficient rectification process. It features a maximum DC reverse voltage of 100V and an average rectified current of 1A, making it suitable for various power supply and rectification needs.

Key Specifications

ParameterValue
ManufacturerTaiwan Semiconductor Corporation
Model Name1N4002GHR1G
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)1 A
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A
Current - Reverse Leakage @ Vr5 µA @ 100 V
Capacitance @ Vr, F10 pF @ 4 V, 1 MHz
SpeedStandard Recovery >500 ns, > 200 mA (Io)
Operating Temperature - Junction-55°C ~ 150°C
Mounting TypeThrough Hole
Package / CaseDO-204AL, DO-41, Axial
Supplier Device PackageDO-204AL (DO-41)
Part StatusActive

Key Features

  • High DC Reverse Voltage: Up to 100 V, ensuring robust performance in various applications.
  • High Average Rectified Current: 1 A, suitable for power supply and rectification needs.
  • Low Forward Voltage Drop: 1 V @ 1 A, minimizing energy loss during operation.
  • Standard Recovery Time: >500 ns, > 200 mA (Io), providing reliable switching characteristics.
  • Broad Operating Temperature Range: -55°C ~ 150°C, making it versatile for different environmental conditions.
  • Through-Hole Mounting: Easy to integrate into existing designs with DO-204AL, DO-41, and Axial packages.

Applications

The 1N4002GHR1G diode is widely used in various applications, including:

  • Power Supplies: For rectification and voltage regulation in power supply circuits.
  • Audio and Video Equipment: To protect against voltage spikes and ensure stable operation.
  • Automotive Systems: Compliant with AEC-Q101 standards, making it suitable for automotive applications.
  • Industrial Control Systems: For reliable rectification and protection in industrial control circuits.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4002GHR1G diode?
    The maximum DC reverse voltage is 100 V.
  2. What is the average rectified current of the 1N4002GHR1G diode?
    The average rectified current is 1 A.
  3. What is the forward voltage drop of the 1N4002GHR1G diode at 1 A?
    The forward voltage drop is 1 V @ 1 A.
  4. What is the recovery time of the 1N4002GHR1G diode?
    The recovery time is >500 ns, > 200 mA (Io).
  5. What is the operating temperature range of the 1N4002GHR1G diode?
    The operating temperature range is -55°C ~ 150°C.
  6. What type of mounting does the 1N4002GHR1G diode use?
    The diode uses through-hole mounting.
  7. What are the package options for the 1N4002GHR1G diode?
    The package options include DO-204AL, DO-41, and Axial.
  8. Is the 1N4002GHR1G diode compliant with automotive standards?
    Yes, it is compliant with AEC-Q101 standards.
  9. What is the reverse leakage current of the 1N4002GHR1G diode at 100 V?
    The reverse leakage current is 5 µA @ 100 V.
  10. What is the capacitance of the 1N4002GHR1G diode at 4 V and 1 MHz?
    The capacitance is 10 pF @ 4 V, 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
484

Please send RFQ , we will respond immediately.

Same Series
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR1G
1N4002GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4003G R1G
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
DIODE GEN PURP 50V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G A0G
1N4004G A0G
DIODE GEN PURP 400V 1A DO204AL
1N4007GHA0G
1N4007GHA0G
DIODE GEN PURP 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4002GHR1G 1N4003GHR1G 1N4001GHR1G 1N4002G R1G 1N4002GHR0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 50 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

1.5KE120A B0G
1.5KE120A B0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAS40 RFG
BAS40 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 200MA SOT23
1N5821H
1N5821H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAV21 A0G
BAV21 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA DO35
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR460HB0G
MUR460HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4004GR0
1N4004GR0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
BZV55C3V3 L0G
BZV55C3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55B15 L0G
BZV55B15 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323