1N4007GHR1G
  • Share:

Taiwan Semiconductor Corporation 1N4007GHR1G

Manufacturer No:
1N4007GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GHR1G is a glass passivated rectifier diode from Diodes Incorporated, designed for general-purpose rectification. This diode is part of the 1N4001-1N4007 series, known for its high current capability and low forward voltage drop. It is widely used in various electronic circuits requiring reliable and efficient rectification.

Key Specifications

ParameterSymbol1N4007GHR1GUnit
Peak Repetitive Reverse VoltageVRRM1000V
RMS Reverse VoltageVRMS700V
Maximum DC Blocking VoltageVR1000V
Average Rectified Output Current (TA = 75°C)IO1.0A
Non-Repetitive Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM30A
Forward Voltage @ IF = 1.0 AVFM1.1V
Maximum Reverse Current @ TA = 25°C at Rated DC Blocking VoltageIRM5.0μA
Typical Junction Capacitance (at 1 MHz, 4.0 V DC)Cj15pF
Operating and Storage Temperature RangeTJ, TSTG-50 to +150°C

Key Features

  • High Current Capability: The 1N4007GHR1G can handle up to 1.0 A of average rectified current.
  • Low Forward Voltage Drop: It features a low forward voltage drop of 1.1 V at 1.0 A, reducing power losses in the circuit.
  • Surge Overload Rating: The diode has a surge overload rating of up to 30 A peak for 8.3 ms single half sine-wave.
  • Low Reverse Leakage Current: It has a low reverse leakage current of 5.0 μA at 25°C.
  • Lead-Free Finish and RoHS Compliant: The diode is lead-free and compliant with RoHS regulations.
  • Glass Passivated Die Construction: This construction enhances the diode's reliability and performance.

Applications

The 1N4007GHR1G is suitable for a variety of applications, including:

  • General-Purpose Rectification: Used in power supplies, DC power adapters, and other rectification circuits.
  • Automotive Systems: Can be used in automotive applications requiring specific change control and compliance with automotive standards.
  • Consumer Electronics: Found in various consumer electronic devices such as TVs, audio equipment, and other household appliances.
  • Industrial Equipment: Used in industrial control systems, motor drives, and other industrial applications.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4007GHR1G?
    The peak repetitive reverse voltage is 1000 V.
  2. What is the maximum average rectified output current at 75°C?
    The maximum average rectified output current is 1.0 A.
  3. What is the forward voltage drop at 1.0 A?
    The forward voltage drop is 1.1 V.
  4. Is the 1N4007GHR1G RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  5. What is the typical junction capacitance?
    The typical junction capacitance is 15 pF at 1 MHz and 4.0 V DC.
  6. What is the operating and storage temperature range?
    The operating and storage temperature range is -50 to +150°C.
  7. What is the surge overload rating?
    The surge overload rating is up to 30 A peak for 8.3 ms single half sine-wave.
  8. What type of construction does the 1N4007GHR1G have?
    The diode has a glass passivated die construction.
  9. What is the package type of the 1N4007GHR1G?
    The package type is DO-41 plastic.
  10. Is the 1N4007GHR1G suitable for automotive applications?
    Yes, it can be used in automotive applications requiring specific change control and compliance with automotive standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
17

Please send RFQ , we will respond immediately.

Same Series
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR1G
1N4002GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4006GHR1G
1N4006GHR1G
DIODE GEN PURP 800V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4001G A0G
1N4001G A0G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4007GHR1G 1N4006GHR1G 1N4007G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
MUR460 A0G
MUR460 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BZV55C3V0 L0G
BZV55C3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55C3V6 L0G
BZV55C3V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZX84C30 RFG
BZX84C30 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 30V 300MW SOT23
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF