1N4007GHR1G
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Taiwan Semiconductor Corporation 1N4007GHR1G

Manufacturer No:
1N4007GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GHR1G is a glass passivated rectifier diode from Diodes Incorporated, designed for general-purpose rectification. This diode is part of the 1N4001-1N4007 series, known for its high current capability and low forward voltage drop. It is widely used in various electronic circuits requiring reliable and efficient rectification.

Key Specifications

ParameterSymbol1N4007GHR1GUnit
Peak Repetitive Reverse VoltageVRRM1000V
RMS Reverse VoltageVRMS700V
Maximum DC Blocking VoltageVR1000V
Average Rectified Output Current (TA = 75°C)IO1.0A
Non-Repetitive Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM30A
Forward Voltage @ IF = 1.0 AVFM1.1V
Maximum Reverse Current @ TA = 25°C at Rated DC Blocking VoltageIRM5.0μA
Typical Junction Capacitance (at 1 MHz, 4.0 V DC)Cj15pF
Operating and Storage Temperature RangeTJ, TSTG-50 to +150°C

Key Features

  • High Current Capability: The 1N4007GHR1G can handle up to 1.0 A of average rectified current.
  • Low Forward Voltage Drop: It features a low forward voltage drop of 1.1 V at 1.0 A, reducing power losses in the circuit.
  • Surge Overload Rating: The diode has a surge overload rating of up to 30 A peak for 8.3 ms single half sine-wave.
  • Low Reverse Leakage Current: It has a low reverse leakage current of 5.0 μA at 25°C.
  • Lead-Free Finish and RoHS Compliant: The diode is lead-free and compliant with RoHS regulations.
  • Glass Passivated Die Construction: This construction enhances the diode's reliability and performance.

Applications

The 1N4007GHR1G is suitable for a variety of applications, including:

  • General-Purpose Rectification: Used in power supplies, DC power adapters, and other rectification circuits.
  • Automotive Systems: Can be used in automotive applications requiring specific change control and compliance with automotive standards.
  • Consumer Electronics: Found in various consumer electronic devices such as TVs, audio equipment, and other household appliances.
  • Industrial Equipment: Used in industrial control systems, motor drives, and other industrial applications.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4007GHR1G?
    The peak repetitive reverse voltage is 1000 V.
  2. What is the maximum average rectified output current at 75°C?
    The maximum average rectified output current is 1.0 A.
  3. What is the forward voltage drop at 1.0 A?
    The forward voltage drop is 1.1 V.
  4. Is the 1N4007GHR1G RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  5. What is the typical junction capacitance?
    The typical junction capacitance is 15 pF at 1 MHz and 4.0 V DC.
  6. What is the operating and storage temperature range?
    The operating and storage temperature range is -50 to +150°C.
  7. What is the surge overload rating?
    The surge overload rating is up to 30 A peak for 8.3 ms single half sine-wave.
  8. What type of construction does the 1N4007GHR1G have?
    The diode has a glass passivated die construction.
  9. What is the package type of the 1N4007GHR1G?
    The package type is DO-41 plastic.
  10. Is the 1N4007GHR1G suitable for automotive applications?
    Yes, it can be used in automotive applications requiring specific change control and compliance with automotive standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4007GHR1G 1N4006GHR1G 1N4007G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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