1N4002GHA0G
  • Share:

Taiwan Semiconductor Corporation 1N4002GHA0G

Manufacturer No:
1N4002GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GHA0G is a standard recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, known for its high current capability and low forward voltage drop. It is designed to handle a wide range of applications requiring reliable rectification.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM 100 V
RMS Reverse Voltage VR(RMS) 70 V
Average Rectified Output Current @ TA = 75°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave) IFSM 30 A
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°C IRM 5.0 µA / 50 µA µA
Typical Reverse Recovery Time trr 2.0 µs µs
Typical Total Capacitance CT 8.0 pF pF
Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +175 °C °C
Case Material Molded Plastic (UL Flammability Classification Rating 94V-0)
Terminals Finish Tin. Plated Leads Solderable per MIL-STD-202, Method 208

Key Features

  • High Current Capability: The 1N4002GHA0G can handle an average rectified output current of 1.0 A.
  • Low Forward Voltage Drop: It features a forward voltage drop of 1.0 V at 1.0 A, making it efficient for various applications.
  • Surge Overload Rating: The diode has a non-repetitive peak forward surge current rating of 30 A.
  • Lead Free Finish, RoHS Compliant: It is compliant with EU Directive 2002/95/EC (RoHS), ensuring environmental safety.
  • Glass Passivated Die Construction: This construction enhances the diode's reliability and performance.
  • Standard Recovery Time: The typical reverse recovery time is 2.0 µs, suitable for standard rectification needs.

Applications

  • Power Supplies: Used in AC-DC power supplies for rectification.
  • DC Power Systems: Suitable for DC power systems requiring reliable rectification.
  • Audio and Video Equipment: Can be used in audio and video equipment for power rectification.
  • Automotive Systems: Applicable in automotive systems for voltage rectification.
  • General Electronic Circuits: Used in various general electronic circuits requiring standard rectifier diodes.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4002GHA0G diode?

    The peak repetitive reverse voltage is 100 V.

  2. What is the average rectified output current of the 1N4002GHA0G at 75°C?

    The average rectified output current is 1.0 A.

  3. What is the forward voltage drop of the 1N4002GHA0G at 1.0 A?

    The forward voltage drop is 1.0 V.

  4. Is the 1N4002GHA0G RoHS compliant?

    Yes, it is RoHS compliant.

  5. What is the typical reverse recovery time of the 1N4002GHA0G?

    The typical reverse recovery time is 2.0 µs.

  6. What is the maximum operating temperature of the 1N4002GHA0G?

    The maximum operating temperature is 175°C.

  7. What is the case material of the 1N4002GHA0G?

    The case material is molded plastic with a UL flammability classification rating of 94V-0.

  8. What is the finish of the terminals of the 1N4002GHA0G?

    The terminals have a tin finish and are solderable per MIL-STD-202, Method 208.

  9. What is the surge overload rating of the 1N4002GHA0G?

    The non-repetitive peak forward surge current rating is 30 A.

  10. In what types of applications is the 1N4002GHA0G commonly used?

    It is commonly used in power supplies, DC power systems, audio and video equipment, automotive systems, and general electronic circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
512

Please send RFQ , we will respond immediately.

Same Series
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4002G R1G
1N4002G R1G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR1G
1N4002GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4007GHA0G
1N4007GHA0G
DIODE GEN PURP 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4003G B0G
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4002GHA0G 1N4002GHR0G 1N4003GHA0G 1N4002GHB0G 1N4001GHA0G 1N4002G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 200 V 100 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL

Related Product By Brand

1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAT54C RFG
BAT54C RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
MUR420S
MUR420S
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR460S R7G
MUR460S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAV21 A0G
BAV21 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA DO35
BAS85-L0 L1
BAS85-L0 L1
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C13 L0G
BZV55C13 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B13 L0G
BZV55B13 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZX84C3V3 RFG
BZX84C3V3 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 300MW SOT23