BAT42-TAP
  • Share:

Vishay General Semiconductor - Diodes Division BAT42-TAP

Manufacturer No:
BAT42-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT42-TAP is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its low turn-on voltage and fast switching characteristics. It is available in the DO-35 (DO-204AH) package and is suitable for a wide range of applications requiring efficient rectification and switching.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive peak reverse voltage Tamb = 25 °C VRRM 30 V
Forward continuous current Tamb = 25 °C IF 200 mA
Repetitive peak forward current tp < 1 s, δ < 0.5 IFRM 500 mA
Surge forward current tp < 10 ms IFSM 4 A
Power dissipation Tamb = 65 °C Ptot 200 mW
Thermal resistance junction to ambient air Tamb = 25 °C RthJA 300 K/W
Junction temperature Tj 125 °C
Ambient operating temperature range Tamb -65 to +125 °C
Storage temperature range Tstg -65 to +150 °C
Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 30 V
Leakage current VR = 25 V IR 0.5 μA
Forward voltage IF = 200 mA VF 1000 mV
Diode capacitance VR = 1 V, f = 1 MHz CD 7 pF
Reverse recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5 ns

Key Features

  • Low turn-on voltage, typically 400 mV at 10 mA and 650 mV at 50 mA.
  • Fast switching characteristics with a reverse recovery time of 5 ns.
  • High efficiency due to low forward voltage drop and fast guard ring against excessive voltage, such as electrostatic discharges.
  • Ambient operating temperature range from -65 °C to +125 °C, making it suitable for a wide range of applications.
  • Available in DO-35 (DO-204AH) package, with options for tape and reel or ammo pack packaging.

Applications

  • General-purpose rectification and switching applications.
  • Polarity protection and signal switching in various electronic circuits.
  • Automotive, industrial, computing, and consumer electronics where low forward voltage drop and fast switching are required.
  • Protection against electrostatic discharges (ESD) due to its fast guard ring).

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAT42-TAP?

    The maximum repetitive peak reverse voltage is 30 V).

  2. What is the forward continuous current rating of the BAT42-TAP?

    The forward continuous current rating is 200 mA).

  3. What is the typical forward voltage drop at 10 mA for the BAT42-TAP?

    The typical forward voltage drop at 10 mA is 400 mV).

  4. What is the reverse recovery time of the BAT42-TAP?

    The reverse recovery time is 5 ns).

  5. What is the operating temperature range for the BAT42-TAP?

    The ambient operating temperature range is from -65 °C to +125 °C).

  6. What package types are available for the BAT42-TAP?

    The BAT42-TAP is available in the DO-35 (DO-204AH) package with options for tape and reel or ammo pack packaging).

  7. What are some common applications for the BAT42-TAP?

    Common applications include general-purpose rectification, polarity protection, signal switching, and protection against electrostatic discharges in automotive, industrial, and consumer electronics).

  8. What is the maximum surge forward current rating for the BAT42-TAP?

    The maximum surge forward current rating is 4 A for tp < 10 ms).

  9. What is the thermal resistance junction to ambient air for the BAT42-TAP?

    The thermal resistance junction to ambient air is 300 K/W).

  10. Is the BAT42-TAP RoHS compliant?

    Yes, the BAT42-TAP is RoHS compliant).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:650 mV @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.40
711

Please send RFQ , we will respond immediately.

Same Series
BAT42-TR
BAT42-TR
DIODE SCHOTTKY 30V 200MA DO35
BAT43-TAP
BAT43-TAP
DIODE SCHOTTKY 30V 200MA DO35
BAT43-TR
BAT43-TR
DIODE SCHOTTKY 30V 200MA DO35

Similar Products

Part Number BAT42-TAP BAT43-TAP BAT46-TAP BAT41-TAP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 100 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 150mA (DC) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 650 mV @ 50 mA 450 mV @ 15 mA 1 V @ 250 mA 1 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns - -
Current - Reverse Leakage @ Vr 500 nA @ 25 V 500 nA @ 25 V 5 µA @ 75 V 100 nA @ 100 V
Capacitance @ Vr, F 7pF @ 1V, 1MHz 7pF @ 1V, 1MHz 6pF @ 1V, 1MHz 2pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH)
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC

Related Product By Brand

SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T150AHM3_A/I
SM6T150AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T15CAHE3_A/H
SM6T15CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T33CAHM3_A/H
SM15T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T12AHM3_A/H
SM15T12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM6T12AHM3/H
SM6T12AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
ZM4742A-GS18
ZM4742A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 1W DO213AB
BZX84C4V7-E3-18
BZX84C4V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C51-E3-18
BZX84C51-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3