BAS21WQ-7-F
  • Share:

Diodes Incorporated BAS21WQ-7-F

Manufacturer No:
BAS21WQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21WQ-7-F is a high-voltage switching diode manufactured by Diodes Incorporated. This component is encapsulated in a SOT-323 (SC-70) surface-mount package, making it ideal for automated insertion in various electronic designs. The diode is designed for general-purpose switching applications and is known for its fast switching speed and high reverse breakdown voltage.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Package - SOT-323 - -
Reverse Breakdown Voltage V(BR)R 200 V IR = 100µA
Forward Voltage V_F 1.25 V IF = 200mA
Reverse Current IR 100 nA TJ = +25°C, VR = 200V
Forward Current IF 200 mA -
Non-Repetitive Peak Forward Surge Current IFSM 2.5 A t = 1.0µs
Repetitive Peak Forward Surge Current IFRM 625 mA -
Reverse Recovery Time t_RR 50 ns IF = IR = 30mA, IRR = 0.1 x IR, RL = 100Ω
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C -
Power Dissipation P_D 200 mW -
Thermal Resistance Junction to Ambient Air RθJA 625 °C/W -

Key Features

  • Fast Switching Speed: Ideal for applications requiring quick switching times.
  • Surface Mount Package: SOT-323 (SC-70) package suited for automated insertion.
  • High Reverse Breakdown Voltage: Up to 200V, making it suitable for high-voltage applications.
  • Totally Lead-Free & Fully RoHS Compliant: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
  • Halogen and Antimony Free: Classified as a “Green” device, ensuring environmental sustainability.
  • Automotive Compliance: Available in versions qualified to AEC-Q100/101/104/200 and manufactured in IATF 16949 certified facilities.

Applications

  • General Purpose Switching: Suitable for a wide range of switching applications due to its fast switching speed and high reverse breakdown voltage.
  • Automotive Applications: Qualified for automotive use, meeting specific change control and manufacturing standards.
  • Industrial and Power Applications: Used in various industrial and power management systems where high reliability and efficiency are required.
  • Consumer and Mobile Devices: Found in consumer electronics and mobile devices where compact, high-performance components are necessary.

Q & A

  1. What is the package type of the BAS21WQ-7-F diode?

    The BAS21WQ-7-F diode is packaged in a SOT-323 (SC-70) surface-mount package.

  2. What is the maximum reverse breakdown voltage of the BAS21WQ-7-F?

    The maximum reverse breakdown voltage is 200V.

  3. What is the forward current rating of the BAS21WQ-7-F?

    The forward current rating is 200mA.

  4. Is the BAS21WQ-7-F RoHS compliant?

    Yes, the BAS21WQ-7-F is fully RoHS compliant and lead-free.

  5. What is the reverse recovery time of the BAS21WQ-7-F?

    The reverse recovery time is 50ns.

  6. What are the operating and storage temperature ranges for the BAS21WQ-7-F?

    The operating and storage temperature range is -55°C to +150°C.

  7. Is the BAS21WQ-7-F suitable for automotive applications?

    Yes, it is available in versions qualified to AEC-Q100/101/104/200 and manufactured in IATF 16949 certified facilities.

  8. What is the power dissipation rating of the BAS21WQ-7-F?

    The power dissipation rating is 200mW.

  9. What is the thermal resistance junction to ambient air for the BAS21WQ-7-F?

    The thermal resistance junction to ambient air is 625°C/W.

  10. Is the BAS21WQ-7-F halogen and antimony free?

    Yes, it is classified as a “Green” device, meaning it is halogen and antimony free.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.26
2,799

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS21WQ-7-F BAS21Q-7-F BAS21W-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-23-3 SOT-323
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

1N5711W-7-F
1N5711W-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
1N4148W-7-F
1N4148W-7-F
Diodes Incorporated
DIODE GEN PURP 100V 300MA SOD123
BAS21-7
BAS21-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT23
BZX84C4V7-7
BZX84C4V7-7
Diodes Incorporated
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C2V4-7-G
BZX84C2V4-7-G
Diodes Incorporated
DIODE ZENER
BC807-40W-7
BC807-40W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
BCX5210TA
BCX5210TA
Diodes Incorporated
TRANS PNP 60V 1A SOT89-3
BCP5416QTA
BCP5416QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS8402DW-7-F
BSS8402DW-7-F
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
BSS123WQ-7-F
BSS123WQ-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT323