1N5711UBD
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Microchip Technology 1N5711UBD

Manufacturer No:
1N5711UBD
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
SCHOTTKY BARRIER DIODE CERAMIC S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5711UBD is a Schottky diode produced by Microchip Technology. This component is part of the 1N5711 series, known for its high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities. The 1N5711UBD is specifically designed for surface mount applications, featuring a 3-SMD, no-lead package. It is widely used in various electronic circuits requiring efficient rectification and switching.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Voltage - Forward (Vf) (Max) @ If 1 @ 15 mA V @ mA
Forward Continuous Current (If) 15 mA
Power Dissipation (Ptot) 430 mW
Storage and Junction Temperature Range -65 to 200 °C
Maximum Lead Temperature for Soldering 230 °C
Thermal Resistance (Rth(j-a)) 400 °C/W

Key Features

  • High Breakdown Voltage: The 1N5711UBD has a repetitive peak reverse voltage (VRRM) of 50V, making it suitable for applications requiring high voltage handling.
  • Low Turn-On Voltage: With a forward voltage (Vf) of 1V at 15mA, this diode offers low voltage drop, reducing power losses in the circuit.
  • Ultrafast Switching: The diode is designed for ultrafast switching, making it ideal for high-frequency applications such as UHF/VHF detection and pulse circuits.
  • Surface Mount Package: The 3-SMD, no-lead package is designed for surface mount technology, facilitating easier and more efficient assembly processes.
  • High Reliability: The component is built to withstand a wide temperature range and has a high thermal resistance, ensuring reliable operation in various environmental conditions.

Applications

  • UHF/VHF Detection: The 1N5711UBD is primarily intended for high-level UHF/VHF detection due to its high breakdown voltage and ultrafast switching capabilities.
  • Pulse Applications: It is suitable for pulse applications that require a broad dynamic range and fast switching times.
  • General Rectification: The diode can be used in general rectification circuits where low forward voltage drop and high efficiency are required.
  • Switching Circuits: Its ultrafast switching characteristics make it a good choice for various switching circuits in electronic devices.

Q & A

  1. What is the maximum reverse voltage of the 1N5711UBD?

    The maximum reverse voltage (VRRM) of the 1N5711UBD is 50V.

  2. What is the forward voltage drop of the 1N5711UBD at 15mA?

    The forward voltage (Vf) at 15mA is 1V.

  3. What is the maximum forward continuous current of the 1N5711UBD?

    The maximum forward continuous current (If) is 15mA.

  4. What is the power dissipation of the 1N5711UBD?

    The power dissipation (Ptot) is 430mW at 25°C.

  5. What is the storage and junction temperature range of the 1N5711UBD?

    The storage and junction temperature range is -65°C to 200°C.

  6. What is the maximum lead temperature for soldering the 1N5711UBD?

    The maximum lead temperature for soldering is 230°C for 10 seconds at 4mm from the case).

  7. What are the typical applications of the 1N5711UBD?

    The 1N5711UBD is typically used in UHF/VHF detection, pulse applications, general rectification, and switching circuits).

  8. Is the 1N5711UBD suitable for high-frequency applications?

    Yes, the 1N5711UBD is designed for ultrafast switching and is suitable for high-frequency applications).

  9. What package type does the 1N5711UBD come in?

    The 1N5711UBD comes in a 3-SMD, no-lead surface mount package).

  10. Is the 1N5711UBD RoHS compliant?

    Yes, the 1N5711UBD is RoHS compliant, although specific variants may have different compliance statuses).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 50 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:4-SMD, No Lead
Supplier Device Package:UB
Operating Temperature - Junction:-65°C ~ 150°C
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