MBR10100-M3/4W
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Vishay General Semiconductor - Diodes Division MBR10100-M3/4W

Manufacturer No:
MBR10100-M3/4W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE SCHOTTKY 100V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100-M3/4W is a high-performance Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component utilizes Trench MOS Schottky (TMBS) technology, which offers lower power losses and high efficiency. The diode is designed for applications requiring high forward surge capability and low forward voltage drop.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current IF(AV) 10 A
Peak Forward Surge Current IFSM 150 A
Maximum Instantaneous Forward Voltage VF 0.85 V
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package TO-220AC
Termination Type Through Hole
Lead Free Status / RoHS Status Lead Free / RoHS compliant

Key Features

  • Trench MOS Schottky Technology: Offers lower power losses and high efficiency.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 0.85 V at 10 A.
  • High Forward Surge Capability: Peak forward surge current of 150 A.
  • High Operating Temperature Range: Junction and storage temperature range from -65°C to +150°C.
  • RoHS Compliant and Halogen-Free: Meets environmental standards with a halogen-free and RoHS-compliant design.
  • High Reliability: Meets JESD 201 class 1A whisker test and has a high level of reliability in various applications.

Applications

  • DC/DC Converters: Suitable for use in DC/DC converters due to its high efficiency and low forward voltage drop.
  • Freewheeling Diodes: Ideal for freewheeling diode applications in power circuits.
  • Polarity Protection: Can be used for polarity protection in various electronic circuits.
  • Industrial and Automotive Systems: Applicable in industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR10100-M3/4W?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the MBR10100-M3/4W?

    The maximum average forward rectified current is 10 A.

  3. What is the peak forward surge current of the MBR10100-M3/4W?

    The peak forward surge current is 150 A.

  4. What is the maximum instantaneous forward voltage of the MBR10100-M3/4W?

    The maximum instantaneous forward voltage is 0.85 V at 10 A.

  5. What is the operating junction and storage temperature range of the MBR10100-M3/4W?

    The operating junction and storage temperature range is from -65°C to +150°C.

  6. Is the MBR10100-M3/4W RoHS compliant and halogen-free?
  7. What package type does the MBR10100-M3/4W use?

    The MBR10100-M3/4W uses the TO-220AC package.

  8. What are some common applications of the MBR10100-M3/4W?
  9. What technology does the MBR10100-M3/4W utilize?

    The MBR10100-M3/4W utilizes Trench MOS Schottky (TMBS) technology.

  10. Is the MBR10100-M3/4W suitable for high-reliability applications?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-65°C ~ 150°C
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Same Series
MBR1090-M3/4W
MBR1090-M3/4W
DIODE SCHOTTKY 90V 10A TO220AC

Similar Products

Part Number MBR10100-M3/4W MBR10100-E3/4W
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 800 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

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