MBR10100-M3/4W
  • Share:

Vishay General Semiconductor - Diodes Division MBR10100-M3/4W

Manufacturer No:
MBR10100-M3/4W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE SCHOTTKY 100V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100-M3/4W is a high-performance Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component utilizes Trench MOS Schottky (TMBS) technology, which offers lower power losses and high efficiency. The diode is designed for applications requiring high forward surge capability and low forward voltage drop.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current IF(AV) 10 A
Peak Forward Surge Current IFSM 150 A
Maximum Instantaneous Forward Voltage VF 0.85 V
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package TO-220AC
Termination Type Through Hole
Lead Free Status / RoHS Status Lead Free / RoHS compliant

Key Features

  • Trench MOS Schottky Technology: Offers lower power losses and high efficiency.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 0.85 V at 10 A.
  • High Forward Surge Capability: Peak forward surge current of 150 A.
  • High Operating Temperature Range: Junction and storage temperature range from -65°C to +150°C.
  • RoHS Compliant and Halogen-Free: Meets environmental standards with a halogen-free and RoHS-compliant design.
  • High Reliability: Meets JESD 201 class 1A whisker test and has a high level of reliability in various applications.

Applications

  • DC/DC Converters: Suitable for use in DC/DC converters due to its high efficiency and low forward voltage drop.
  • Freewheeling Diodes: Ideal for freewheeling diode applications in power circuits.
  • Polarity Protection: Can be used for polarity protection in various electronic circuits.
  • Industrial and Automotive Systems: Applicable in industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR10100-M3/4W?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the MBR10100-M3/4W?

    The maximum average forward rectified current is 10 A.

  3. What is the peak forward surge current of the MBR10100-M3/4W?

    The peak forward surge current is 150 A.

  4. What is the maximum instantaneous forward voltage of the MBR10100-M3/4W?

    The maximum instantaneous forward voltage is 0.85 V at 10 A.

  5. What is the operating junction and storage temperature range of the MBR10100-M3/4W?

    The operating junction and storage temperature range is from -65°C to +150°C.

  6. Is the MBR10100-M3/4W RoHS compliant and halogen-free?
  7. What package type does the MBR10100-M3/4W use?

    The MBR10100-M3/4W uses the TO-220AC package.

  8. What are some common applications of the MBR10100-M3/4W?
  9. What technology does the MBR10100-M3/4W utilize?

    The MBR10100-M3/4W utilizes Trench MOS Schottky (TMBS) technology.

  10. Is the MBR10100-M3/4W suitable for high-reliability applications?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$1.27
729

Please send RFQ , we will respond immediately.

Same Series
MBR1090-M3/4W
MBR1090-M3/4W
DIODE SCHOTTKY 90V 10A TO220AC

Similar Products

Part Number MBR10100-M3/4W MBR10100-E3/4W
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 800 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD

Related Product By Brand

SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SMBJ5.0CAHM3/H
SMBJ5.0CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BAS40LTH-G3-08
BAS40LTH-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BZX384C4V3-E3-08
BZX384C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 200MW SOD323
BZX84C51-E3-18
BZX84C51-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3