Overview
The MBR10100-E3/4W is a high-performance Schottky rectifier produced by Vishay General Semiconductor - Diodes Division. This component utilizes Trench MOS Schottky technology, which offers lower power losses and high efficiency. It is designed for applications requiring high forward surge capability and low forward voltage drop. The MBR10100-E3/4W is available in the TO-220AC package, making it suitable for a variety of industrial, automotive, and consumer electronics applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Reverse Voltage | VRRM | 100 | V |
| Working Peak Reverse Voltage | VRWM | 100 | V |
| Maximum DC Blocking Voltage | VDC | 100 | V |
| Maximum Average Forward Rectified Current at TC = 133 °C | IF(AV) | 10 | A |
| Peak Forward Surge Current (8.3 ms single half sine-wave) | IFSM | 150 | A |
| Maximum Instantaneous Forward Voltage at IF = 10 A, TC = 25 °C | VF | 0.80 | V |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -65 to +150 | °C |
| Diode Configuration | Single | ||
| Diode Case Style | TO-220AC | ||
| No. of Pins | 2 Pins | ||
| Termination Type | Through Hole |
Key Features
- Trench MOS Schottky technology for lower power losses and high efficiency.
- Low forward voltage drop (VF = 0.80 V at IF = 10 A, TC = 25 °C).
- High forward surge capability (IFSM = 150 A for 8.3 ms single half sine-wave).
- High operating junction and storage temperature range (-65 °C to +150 °C).
- Isolation voltage from terminal to heatsink (VAC = 1500 V for ITO-220AC package).
- High reliability and robustness, suitable for various industrial and automotive applications.
Applications
- Industrial power supplies and rectifiers.
- Automotive systems, including battery charging and power management.
- Consumer electronics, such as power adapters and DC-DC converters.
- High-frequency switching applications due to its ultrafast recovery characteristics.
- General-purpose rectification in high-power circuits.
Q & A
- What is the repetitive reverse voltage of the MBR10100-E3/4W?
The repetitive reverse voltage (VRRM) is 100 V.
- What is the maximum average forward rectified current of the MBR10100-E3/4W?
The maximum average forward rectified current (IF(AV)) is 10 A at TC = 133 °C.
- What is the peak forward surge current of the MBR10100-E3/4W?
The peak forward surge current (IFSM) is 150 A for an 8.3 ms single half sine-wave.
- What is the maximum instantaneous forward voltage of the MBR10100-E3/4W?
The maximum instantaneous forward voltage (VF) is 0.80 V at IF = 10 A, TC = 25 °C.
- What is the operating junction and storage temperature range of the MBR10100-E3/4W?
The operating junction and storage temperature range is -65 °C to +150 °C.
- What package type is the MBR10100-E3/4W available in?
The MBR10100-E3/4W is available in the TO-220AC package.
- What are the key features of the Trench MOS Schottky technology used in the MBR10100-E3/4W?
The Trench MOS Schottky technology offers lower power losses, high efficiency, low forward voltage drop, and high forward surge capability.
- Is the MBR10100-E3/4W suitable for high-frequency switching applications?
Yes, it is suitable due to its ultrafast recovery characteristics.
- What are some common applications of the MBR10100-E3/4W?
Common applications include industrial power supplies, automotive systems, consumer electronics, and general-purpose rectification in high-power circuits.
- Does the MBR10100-E3/4W have any special certifications or compliance?
It is RoHS compliant and has no SVHC (Substances of Very High Concern) as per the specified dates.
