BAT85S-TAP
  • Share:

Vishay General Semiconductor - Diodes Division BAT85S-TAP

Manufacturer No:
BAT85S-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 30V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT85S-TAP is a Small Signal Schottky Diode produced by Vishay General Semiconductor - Diodes Division. This diode is optimized for high-speed and low-voltage operations, making it ideal for various applications requiring efficient signal switching and rectification. The BAT85S-TAP is packaged in a DO-35 (DO-204AH) package, providing a compact and reliable solution.

Key Specifications

Parameter Value Unit
Reverse Voltage (VR) 30 V
Peak Forward Surge Current (IFSM) 5 A
Repetitive Peak Forward Current (IFRM) 300 mA
Forward Continuous Current (IF) 200 mA
Average Forward Current (IFAV) 200 mA
Forward Voltage (VF) at 100 mA 800 mV
Reverse Current (IR) at 25 V 2 μA
Diode Capacitance (CD) at 1 V, 1 MHz 10 pF
Reverse Recovery Time (trr) 5 ns
Junction Temperature (Tj) -65 to 150 °C
Storage Temperature Range (Tstg) -65 to 150 °C
Package/Case DO-35 (DO-204AH)

Key Features

  • 30V Operating Voltage: The BAT85S-TAP can operate at a maximum voltage of 30V, making it suitable for various applications.
  • 200mA Forward Current: This Schottky diode has a forward current rating of 200mA, allowing for efficient signal switching and rectification.
  • Low Forward Voltage Drop: The BAT85S-TAP features a low forward voltage drop of 800mV at a forward current of 100mA, reducing power consumption and heat generation.
  • High-Speed Operation: Optimized for high-speed operations, this diode is suitable for applications requiring fast signal switching and rectification.
  • RoHS Compliance: This product complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental sustainability.
  • Compact Package: Packaged in a DO-35 (DO-204AH) package, providing a compact and reliable solution.

Applications

  • Analog Signal Switching: The BAT85S-TAP can be used as an analog signal switch in applications such as audio amplifiers, radio frequency (RF) circuits, and telecommunications equipment.
  • Digital Signal Rectification: Suitable for digital signal rectification in applications like power supplies, motor control systems, and data transmission systems.
  • Automotive Applications: Ideal for automotive applications due to its high-speed and low-voltage operation capabilities.

Q & A

  • Q: What is the maximum operating voltage of the BAT85S-TAP?
    A: The maximum operating voltage of the BAT85S-TAP is 30V.
  • Q: What is the forward current rating of the BAT85S-TAP?
    A: The forward current rating of the BAT85S-TAP is 200mA.
  • Q: Is the BAT85S-TAP RoHS compliant?
    A: Yes, the BAT85S-TAP complies with the Restriction of Hazardous Substances (RoHS) directive.
  • Q: What is the package type of the BAT85S-TAP?
    A: The BAT85S-TAP is packaged in a DO-35 (DO-204AH) package.
  • Q: What is the typical forward voltage drop of the BAT85S-TAP at 100 mA?
    A: The typical forward voltage drop of the BAT85S-TAP at 100 mA is 800 mV.
  • Q: What is the reverse recovery time of the BAT85S-TAP?
    A: The reverse recovery time of the BAT85S-TAP is 5 ns.
  • Q: What is the junction temperature range of the BAT85S-TAP?
    A: The junction temperature range of the BAT85S-TAP is -65 to 150 °C.
  • Q: What is the storage temperature range of the BAT85S-TAP?
    A: The storage temperature range of the BAT85S-TAP is -65 to 150 °C.
  • Q: Is the BAT85S-TAP suitable for high-speed applications?
    A: Yes, the BAT85S-TAP is optimized for high-speed operations.
  • Q: What are some common applications of the BAT85S-TAP?
    A: Common applications include analog signal switching, digital signal rectification, and automotive applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.39
1,806

Please send RFQ , we will respond immediately.

Same Series
BAT85S-TR
BAT85S-TR
DIODE SCHOTTKY 30V 200MA DO35

Similar Products

Part Number BAT85S-TAP BAT86S-TAP BAT81S-TAP BAT82S-TAP BAT83S-TAP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 40 V 50 V 60 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 30mA (DC) 30mA (DC) 30mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns - - - -
Current - Reverse Leakage @ Vr 2 µA @ 25 V 5 µA @ 40 V 200 nA @ 40 V 200 nA @ 50 V 200 nA @ 60 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH)
Operating Temperature - Junction -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

SM6T33CA-M3/52
SM6T33CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T220CAHE3_A/I
SM6T220CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
1N4148W-HE3-08
1N4148W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BZX84C3V6-E3-08
BZX84C3V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3